A process of structuring a diamond substrate, comprising the steps of (a) depositing an adhesion layer on a face of the diamond substrate; (b) coating a resist layer on the adhesion layer; (c) removing parts of the resist layer so as to expose parts of the adhesion layer and form a corresponding structuring mask; (d) etching the adhesion layer and the diamond substrate (2) through the structuring mask so as to structure the diamond substrate; wherein the adhesion layer is a non-metallic compound comprising oxides.

A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): ##STR00001##
where R.sup.1 represents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R.sup.2, R.sup.3 each represent the R.sup.1 or a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.

A silicon-containing composition includes: a first polysiloxane; a second polysiloxane different from the first polysiloxane; and a solvent. The first polysiloxane includes a group which includes at least one selected from the group consisting of an ester bond, a carbonate structure, and a cyano group. The second polysiloxane includes a substituted or unsubstituted hydrocarbon group having 1 to 20 carbon atoms.

Methods of forming structures including a photoresist underlayer and an adhesion layer and structures including the photoresist underlayer and adhesion layer are disclosed. Exemplary methods include forming the photoresist underlayer and forming an adhesion layer using a cyclical deposition process. The adhesion layer can be formed within the same reaction chamber used to form the photoresist underlayer.

A composition for flattening uneven substrates. The composition for flattening uneven substrates, which is applied on an organic pattern, includes a solvent and a polysiloxane including a hydrolysis condensate of a hydrolyzable silane, wherein the polysiloxane includes silanol groups in a proportion of 20 mol % or less with respect to Si atoms, and the weight-average molecular weight of the polysiloxane is 1,000-50,000.

The present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed by a chemically-amplified resist which uses an acid as a catalyst. A composition for forming a silicon-containing resist underlayer film, including a thermosetting silicon-containing material (Sx), a curing catalyst (Xc), and a solvent, in which a distance of diffusion of the curing catalyst (Xc) from a resist underlayer film formed from the composition for forming a silicon-containing resist underlayer film to a resist upper layer film to be formed on the resist underlayer film is 5 nm or less.

Methods of fabricating three-dimensional objects featuring properties of a soft bodily tissue and three-dimensional objects featuring properties of a soft bodily tissue or of an organ comprising same are provided.

A photopolymerizable resin composition includes a first layer and a second layer; and a barrier layer disposed between the first layer and the second layer, the barrier layer includes one or more of SiNx, SiOx, SiON, Mo, a Mo oxide, Cu, a Cu oxide, Al, an Al oxide, Ag, and a Ag oxide.

The present invention pertains to a method of manufacturing segregated layers above a substrate. The invention also pertains to methods of manufacturing a photoresist layer, photoresist patterns, a processed substrate and a device.

A composition for resist underlayer film formation, includes: a polysiloxane compound including a first structural unit represented by formula (1); and a solvent. X represents an organic group comprising at least one structure selected from the group consisting of a hydroxy group, a carbonyl group, and an ether bond; a is an integer of 1 to 3, wherein in a case in which a is no less than 2, a plurality of Xs are identical or different from each other; R.sup.1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms, wherein is a group other than X; and b is an integer of 0 to 2, wherein in a case in which b is 2, two R.sup.1s are identical or different from each other, and wherein a sum of a and b is no greater than 3.

##STR00001##