Patent classifications
G03F7/0752
SUBSTRATE TREATING COMPOSITION AND METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE USING THE SAME
Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.
X—Si(R1).sub.2(R2) [Formula 1]
Y—Si(R3).sub.3 [Formula 7]
Method for forming multi-layer film and patterning process
A method for forming multi-layer film on substrate, which includes steps (1) forming under layer film on substrate by applying under layer film material containing resin having repeating unit represented by the general formula (1) or (2) in which fluorene structure is contained, and curing the same by heat treatment, (2) forming metal oxide film on the under layer film by applying metal oxide film material selected from titanium oxide film material, zirconium oxide film material, and hafnium oxide film material, (3) forming hydrocarbon film on metal oxide film by applying hydrocarbon film material, and (4) forming silicon oxide film on the hydrocarbon film by applying silicon oxide film material. There can be provided a method for forming multi-layer film that can reduce reflectance, and useful for a patterning process with high dimensional accuracy of dry etching. ##STR00001##
SUBSTRATE FOR DISPLAY, COLOR FILTER USING THE SAME AND METHOD FOR THE PRODUCTION THEREOF, ORGANIC EL ELEMENT AND METHOD FOR THE PRODUCTION THEREOF, AND FLEXIBLE ORGANIC EL DISPLAY (AS AMENDED)
The present invention is a substrate for a display, the substrate having a film B including a polysiloxane resin on at least one surface of a film A including a polyimide resin, wherein the film B contains inorganic oxide particles therein, and the present invention has an object to provide a substrate for a display: being able to be applied to a color filter, an organic EL element, or the like without the need to carry out any complex operations; allowing high-definition displays to be manufactured; and being provided with a low CTE, a low birefringence, and flexibility.
METHOD FOR FORMING ORGANIC FILM AND METHOD FOR MANUFACTURING SUBSTRATE FOR SEMICONDUCTOR APPARATUS
The present invention provides a method for forming an organic film, including: forming a coating film by spin coating of an organic film-forming composition onto a substrate having an uneven pattern, and thereafter subjecting the substrate to a vibration treatment, and after or simultaneously with the vibration treatment, insolubilizing the coating film to an organic solvent to form the organic film. This provides a method for forming an organic film that can fill an uneven pattern on a substrate to highly flatten a substrate at low cost in a production step of a semiconductor apparatus, etc.
SPIN ON CARBON COMPOSITION AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
A spin on carbon composition, comprises: a carbon backbone polymer; a first crosslinker; and a second crosslinker. The first crosslinker reacts with the carbon backbone polymer to partially crosslink the carbon backbone polymer at a first temperature, and the second crosslinker reacts with the carbon backbone polymer to further crosslink the carbon backbone polymer at a second temperature higher than the first temperature. The first crosslinker is a monomer, oligomer, or polymer. The second crosslinker is a monomer, oligomer, or polymer. The first and second crosslinkers are different from each other. When either of the first crosslinker or the second crosslinker is a polymer, the polymer is a different polymer than the carbon backbone polymer.
Surface treatment agent and surface-treated body manufacturing method
According to the present disclosure, there are provided a surface treatment agent having the advantage that the raw material components can be dissolved in a short time during preparation of the surface treatment agent and capable of exerting a good water repellency imparting effect, and a method of manufacturing a surface-treated body with the use of the surface treatment agent. The surface treatment agent according to the present disclosure includes the following components: (I) at least one kind selected from the group consisting of silicon compounds represented by the following general formulas [1], [2] and [3]; (II) at least one kind selected from the group consisting of a nitrogen-containing heterocyclic compound represented by the following general formula [4], a nitrogen-containing heterocyclic compound represented by the following general formula [5], and imidazole; and (III) an organic solvent. ##STR00001##
Plasma treatment method to enhance surface adhesion for lithography
Embodiments of methods for patterning using enhancement of surface adhesion are presented. In an embodiment, a method for patterning using enhancement of surface adhesion may include providing an input substrate with an anti-reflective coating layer and an underlying layer. Such a method may also include performing a surface adhesion modification process on the substrate, the surface adhesion modification process utilizing a plasma treatment configured to increase an adhesion property of an anti-reflective coating layer without affecting downstream processes. In an embodiment, the method may also include performing a photoresist coating process, a mask exposure process, and a developing process to generate a target patterned structure in a photoresist layer on the substrate. In such embodiments, the method may include controlling operating parameters of the surface adhesion modification process to achieve target profiles of the patterned structure and substrate throughput objectives.
METHOD OF FORMING A SELF-CLEANING FILM SYSTEM
A method of forming a self-cleaning film system includes depositing a perfluorocarbon siloxane polymer onto a substrate to form a first layer. The method includes removing a plurality of portions of the first layer to define a plurality of cavities in the first layer and form a plurality of projections that protrude from the substrate. The method includes depositing a photocatalytic material onto the plurality of projections and into the plurality of cavities to form a second layer comprising: a bonded portion disposed in the plurality of cavities and in contact with the substrate, and a non-bonded portion disposed on the plurality of projections and spaced apart from the substrate. The method also includes, after depositing the photocatalytic material, removing the non-bonded portion to thereby form the self-cleaning film system.
COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD
The composition for forming an underlayer film for lithography according to the present invention contains a compound represented by a specific formula (1) and 20 to 99% by mass of a solvent component (S), in which 27 to 100% by mass of the compound represented by the formula (1) is included in a component (A) other than the solvent component (S).
Metal-containing resist underlayer film-forming composition containing polyacid
A resist underlayer film-forming composition including: (A) component: an isopoly or heteropoly acid, or a salt thereof, or a combination thereof; and (B) component: polysiloxan, poly hafnium oxide or zirconium oxide, or a combination thereof, wherein an amount of the (A) component is 0.1 to 85% by mass of a total amount of the (A) component and the (B) component; and polysiloxan is a hydrolysis-condensation product of hydrolyzable silane of Formula (1):
R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b) Formula (1)
and a hydrolyzable silane whose (a+b) is 0 is contained in a proportion of 60 to 85 mol % of a total hydrolyzable silane in Formula (1); the poly hafnium oxide is a hydrolysis-condensation product of hydrolyzable hafnium of Formula (2):
Hf(R.sup.4).sub.4 Formula (2)
and the zirconium oxide is a hydrolysis-condensation product of hydrolyzable zirconium of Formula (3) or Formula (4):
Zr(R.sup.5).sub.4 Formula (3)
ZrO(R.sup.6).sub.2 Formula (4)
or a hydrolysis-condensation product of a combination thereof.