An example of an ultraviolet light curable resin composition includes a predetermined mass ratio of a first epoxy substituted polyhedral oligomeric silsesquioxane monomer and a second substituted polyhedral oligomeric silsesquioxane monomer, wherein the first and second epoxy substituted polyhedral oligomeric silsesquioxane monomers are different, and wherein the predetermined mass ratio ranges from about 3:7 to about 7:3; bis-(4-methylphenyl)iodonium hexafluorophosphate as a first initiator; a second initiator selected from the group consisting of a free radical initiator and a cationic initiator other than bis-(4-methylphenyl)iodonium hexafluorophosphate; a surface additive; and a solvent.

A resist composition is provided comprising (A) a metal compound having formula (A-1), a hydrolysate or hydrolytic condensate thereof, or the reaction product of the metal compound, hydrolysate or hydrolytic condensate thereof with a di- or trihydric alcohol having formula (A-2), and (B) a sensitizer containing a compound having formula (B-1). The resist composition is adapted to change a solubility in developer upon exposure to high-energy radiation, has high resolution and sensitivity, and forms a pattern of good profile with minimal edge roughness after exposure. ##STR00001##

The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The positive-type photosensitive resin composition comprises an acrylic copolymer having a dissolution rate to a developer in a specific range and a compound containing a phenolic hydroxyl group, so that it is possible to attain a high contrast and a high sensitivity pattern when a cured film is formed. Further, it is possible to further enhance the adhesiveness of a pattern when a half-tone, as well as a full-tone, is formed.

A photosensitive resin composition includes a siloxane resin (A), particles (B) having a median diameter of 0.2 to 0.6 μm, and a naphthoquinone diazide compound (C), wherein the siloxane resin (A) contains at least 20 to 60 mol % in total of a repeating unit represented by general formula (1):

##STR00001##

wherein R.sup.1 represents an aryl group having 6 to 18 carbon atoms or an aryl group having 6 to 18 carbon atoms in which all or part of hydrogen is substituted.

A process for producing a hybrid structured surface, including depositing, on a substrate, a layer of mineral resin including a proportion of Si and/or of SiO.sub.2 includes between 1% and 30% by molar mass; forming a structure including a plurality of pattern motifs in that layer, having at least one dimension, measured parallel or perpendicular to the substrate, includes between 50 nm and 500 μm; forming a roughness on at least part of the surface of the pattern motifs.

A compound of Formula (5-1) or Formula (5-3):

##STR00001##

where R.sup.17 and R.sup.21 are each an ethyl group; R.sup.22 and R.sup.23 are each a methyl group; and R.sup.16 and R.sup.20 are each a methoxy group.

Disclosed is a method for manufacturing a horological component according to which a silicon-based piece having the desired shape of the horological component is produced and the piece is subjected to a thermal oxidation and deoxidation treatment to remove a predetermined thickness of silicon in order to increase the mechanical strength of the piece. This method is characterized in that the thermal oxidation and deoxidation treatment is carried out in several steps, each step including a thermal oxidation phase followed by a deoxidation phase.

Disclosed is a method of preparing polymer film-metal composites and uses of such composites. The metal can be in the form of a nanoparticle or a film. The methods comprise depositing on a surface, a composition comprising: a cationic metal precursor; a polymer film precursor that comprises a plurality of photopolymerizable groups; and a photoreducer-photoinitiator; then irradiating the composition under conditions to simultaneously reduce the cationic metal and polymerize the photopolymerizable groups to obtain the composite on the surface.

Provided are a coating composition for producing an interlayer insulation film, the coating composition making it possible to produce an interlayer insulation film patterned and having a high Young’s modulus and a low relative dielectric constant in high throughput, a method for producing the interlayer insulation film, and a semiconductor element including the interlayer insulation film. Specifically, the coating composition for producing the interlayer insulation film includes: a polymerizable compound (A) being a polymerizable silicon compound having two or more polymerizable groups, at least one of the two or more polymerizable groups being a polymerizable group Q expressed by *-O-R-Y (wherein * represents a bond with a silicon atom, R represents a single bond, an unsubstituted or substituted alkylene group having 1 to 12 carbon atoms and optionally containing a heteroatom, or a phenylene group, and Y represents a polymerizable group); and a photopolymerization initiator (B).

A method for producing a coated substrate includes applying a photocurable silicon-containing coating film-forming composition to an uneven substrate; and exposing the photocurable silicon-containing coating film-forming composition to light, wherein the photocurable silicon-containing coating film-forming composition comprises a hydrolyzable silane, a hydrolysate thereof, or a hydrolytic condensate thereof, wherein the hydrolyzable silane is a hydrolyzable silane of the following Formula (1):

R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b)  Formula (1)

wherein R.sup.1 is a functional group relating to photocrosslinking; R.sup.2 is an alkyl group and is bonded to a silicon atom via an Si—C bond; R.sup.3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3.