Embodiments of the present disclosure generally relate to imprint compositions and materials and related processes useful for nanoimprint lithography (NIL). In one or more embodiments, an imprint composition is provided and contains a plurality of passivated nanoparticles, one or more solvents, a surface ligand, an additive, and an acrylate. Each passivated nanoparticle contains a core and one or more shells, where the core contains one or more metal oxides and the shell contains one or more passivation materials. The passivation material of the shell contains one or more atomic layer deposition (ALD) materials, one or more block copolymers, or one or more silicon-containing compounds.

A quantum dot display substrate, a method for manufacturing a quantum dot display substrate and a display device are provided. The method includes: forming a carrier transport layer on a substrate; forming a quantum dot layer emitting light of a corresponding color in each of the pixel regions, and forming the quantum dot layer includes: forming a pattern-defining layer on the carrier transport layer, the pattern-defining layer exposes a portion of the carrier transport layer in the pixel region and covers remaining portion of the carrier transport layer, hydrophilicity and hydrophobicity of the pattern-defining layer are respectively opposite to those of the exposed portion of the carrier transport layer; coating a quantum dot solution, hydrophilicity and the hydrophobicity of the quantum dot solution are respectively the same as those of the exposed portion of the carrier transport layer; and curing the quantum dot solution.

Disclosed and claimed herein are photoimageable dielectric compositions for dielectric passivation layers, dielectric protection layers as well as dielectric redistribution layers for use in the manufacture of semiconductors, semiconductor packages and circuit board constructions. More specifically it relates to photoimageable polymers containing vinyl groups capable of being crosslinked during processing and post cured at lower temperatures and shorter times than conventional dielectric materials. The processed compositions are characterized by low dielectric constants and low dissipation factors as well as low moisture uptake, chemical and thermal stability, flexibility and excellent HAST (Highly Accelerated Stress Test) and TCT (Thermal Cycling Test) results. The invention also relates to low dk/df dielectric compositions that are not photoimageable

The present invention is directed to refractive index contrast (“RIC”) polymers and methods for producing and using the same. In one particular embodiment, RIC polymers of the invention can be used as waveguides. RIC polymers of the invention are produced from a monomeric mixture comprising a first monomer and a second monomer comprising an acid-labile protecting group, where a first polymer produced from the first monomer has a different refractive index compared to the refractive index of a second polymer produced from the second monomer. The base refractive index of RIC polymers can be tuned by controlling the amount of the first and the second monomers. Furthermore, the refractive index of the waveguide can be modulated by the amount of acid-labile protecting group removal.

One of the purposes of the present invention is to provide a radiation curable organosilicon resin composition which offers a cured product having a sufficient gas barrier property and which further has workability enough for use in spin coating or inkjetting. The present invention provides a radiation curable organosilicon resin composition comprising 100 parts by mass of (A) a (meth)acryloyloxy group-containing organosilane represented by the formula (1) which has a (meth)acryloyloxy group or a monovalent organic group having 4 to 25 carbon atoms and having one, two, or three of said (meth)acryloyloxy group, and 1 to 50 parts by mass of (B) a photopolymerization initiator.

Provided is a photocurable composition used for forming a resin layer of a concave-convex structure including a substrate and a resin layer provided on the substrate and having fine concavities and convexities formed on a surface thereof. A cured film of the photocurable composition has a surface free energy of 15 mJ/m.sup.2 to 40 mJ/m.sup.2 as measured based on the Kitazaki-Hata theory and a hardness of 0.05 GPa to 0.5 GPa as measured using a nanoindenter.

Provided is a resist compound, a method for forming a pattern using the same, and a method for manufacturing a semiconductor device. According to the present disclosure, the compound may be represented by Formula 1. ##STR00001##

According to one exemplary embodiment, a method includes exposing one or more portions of an additive manufacturing resin to light; where the light includes a wavelength configured to cause a photo polymerizable compound in the additive manufacturing resin to polymerize; and the one or more portions of the additive manufacturing resin are defined by a three-dimensional pattern. Moreover, a method of forming an additive manufacturing resin suitable for fabricating a click-chemistry compatible composition of matter includes: reacting a compound comprising a terminal alkyne group or a terminal azide group with a protecting reagent to form a protected reactive diluent precursor, reacting the precursor with a second compound to form a protected reactive diluent; and mixing the protected reactive diluent with a photo polymerizable compound.

A relief-forming precursor includes a substrate and a relief-forming layer having: a polymer; at least one photopolymerizable monomer; a photopolymerization initiator; and a low surface energy monomer. A relief-forming assembly includes a relief-forming precursor having a low surface energy monomer and a mask element that is in complete optical contact with the relief-forming surface. A method of making a relief image includes: exposing the relief-forming layer to curing UV radiation through the mask element to form an imaged relief-forming layer with polymerized regions and non-polymerized regions; removing the mask element from the imaged relief-forming layer; and developing the imaged relief-forming layer by removing the non-polymerized regions, thereby forming a relief image. A relief image layer has an elastomer and copolymer that includes at least one photopolymerized monomer and a low surface energy monomer that has a silicone moiety with a relief surface having the silicone moiety.

An object of the present invention is to provide an imprinting curable composition which includes a silicon-containing polymerizable compound such as polysiloxane, exhibits outstanding adhesion to a substrate and excellent demoldability from a fine pattern mold, and causes very little mold contamination. The object is attained by providing a photo-imprinting curable composition including a polymerizable compound (A) containing a silicon atom in the molecule, a photopolymerization initiator (B) and an additive (C), the additive (C) being a compound represented by the following formula (C1) or (C2):
R.sup.1OC.sub.2H.sub.4O.sub.nX.sup.1  (C1)
X.sup.2OC.sub.2H.sub.4O.sub.pC.sub.3H.sub.6O.sub.qC.sub.2H.sub.4O.sub.rX.s