A silicon-containing composition includes a polysiloxane compound and solvent. The polysiloxane compound includes a fluorine atom and a group including an ester bond. The polysiloxane compound preferably includes a first structural unit represented by formula (1), and a second structural unit represented by formula (2). X represents a monovalent organic group having 1 to 20 carbon atoms and comprising a fluorine atom; R.sup.1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms; Y represents a monovalent organic group having 1 to 20 carbon atoms and comprising an ester bond; and R.sup.2 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms.

##STR00001##

In general, according to one embodiment, there is provided a semiconductor device including a substrate, an insulating layer formed above the substrate, and a conductive layer provided in the insulating layer. The insulating layer includes at least one cellulose fiber.

Method for producing coating composition applied to patterned resist film in lithography process for solvent development to reverse pattern. The method including: step obtaining hydrolysis condensation product by hydrolyzing and condensing hydrolyzable silane in non-alcoholic hydrophilic solvent; step of solvent replacement wherein non-alcoholic hydrophilic solvent replaced with hydrophobic solvent for hydrolysis condensation product. Method for producing semiconductor device, including: step of applying resist composition to substrate and forming resist film; step of exposing and developing formed resist film; step applying composition obtained by above production method to patterned resist film obtained during or after development in step, forming coating film between patterns; step of removing patterned resist film by etching and reversing patterns. Production method that exposure is performed using ArF laser (with wavelength of 193 nm) or EUV (with wavelength of 13.5 nm). Production method that development is negative development with organic solvent.

A photosensitive resin composition comprising (A) a silicone resin comprising recurring units having formula (a1) and recurring units having formula (b1), (B) a filler, and (C) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which can be processed into a fine pattern in thick film form, has improved film properties like crack resistance, and is reliable as protective film. ##STR00001##

A photosensitive resin composition is provided comprising (A) 100 pbw of a phenolic hydroxyl group-containing resin, and (B) 0.1-18 pbw of an epoxy additive in the form of a compound containing 1-8 epoxy groups per molecule, containing nitrogen, sulfur or phosphorus, and having a molecular weight of 50-6,000. The composition has an improved bonding force to metal wirings.

Provided is a photosensitive resin composition which comprises (A) a polymer comprising repeating units represented by formula (A1) and at least one kind of repeating units selected from among repeating units represented by formula (A2) and repeating units represented by formula (A3), (B) an epoxy compound containing four or more epoxy groups on average in the molecule, (C) a photoacid generator, (D) a benzotriazole compound and/or an imidazole compound, and (E) an organic solvent.

##STR00001##

Some embodiments include a semiconductor construction which has one or more openings extending into a substrate. The openings are at least partially filled with dielectric material comprising silicon, oxygen and carbon. The carbon is present to a concentration within a range of from about 3 atomic percent to about 20 atomic percent. Some embodiments include a method of providing dielectric fill across a semiconductor construction having an opening extending therein. The semiconductor construction has an upper surface proximate the opening. The method includes forming photopatternable dielectric material within the opening and across the upper surface, and exposing the photopatternable dielectric material to patterned actinic radiation. Subsequently, the photopatternable dielectric material is developed to pattern the photopatternable dielectric material into a first dielectric structure which at least partially fills the opening, and to remove the photopatternable dielectric material from over the upper surface.

A composition for forming a resist underlayer film containing a hydrolysis condensate prepared through hydrolysis and condensation of a hydrolyzable silane, wherein the hydrolyzable silane contains a hydrolyzable silane of Formula (1):

R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b)   Formula (1)

wherein R.sup.1 is an organic group having a primary amino group, a secondary amino group, or a tertiary amino group and is bonded to a silicon atom via an Si—C bond; R.sup.2 is an alkyl group, an aryl group, a halogenated alkyl group, a halogenated aryl group, an alkoxyaryl group, an alkenyl group, an acyloxyalkyl group, or an organic group having an acryloyl group, a methacryloyl group, a mercapto group, an amino group, an amide group, a hydroxyl group, an alkoxy group, an ester group, a sulfonyl group, or a cyano group, or any combination of these groups, and is bonded to a silicon atom via an Si—C bond; R.sup.1 and R.sup.2 are optionally bonded together to form a ring structure; R.sup.3 is an alkoxy group, an acyloxy group, or a halogen group; a is an integer of 1; b is an integer of 0 to 2; and a+b is an integer of 1 to 3; and the hydrolysis condensate contains an organic group having a salt structure formed between a counter anion derived from a nitric acid and a counter cation derived from a primary ammonium group, a secondary ammonium group, or a tertiary ammonium group.

A pattern forming method including pressing a mold having an uneven pattern against a curable film formed of a nanoimprint composition to transfer the uneven pattern to the curable film, curing the curable film to which the uneven pattern has been transferred while pressing the mold against the curable film to form a cured film, peeling the mold off from the cured film, and heating the cured film, from which the mold has been peeled off at 160° C. or higher to form a post-baked cured film.

The present disclosure relates to a UV- and heat-curable ladder-like polysilsesquioxane copolymer and a method for preparing the same. Since a controlled functionality can be provided only on a desired region via a thiol-ene click reaction without an additional additive, an insulating layer having a low dielectric constant and a microcircuit pattern can be formed without an additional etching process.