Patent classifications
G03F7/0757
Resist composition and patterning process
A resist composition is provided comprising (A) a metal compound having formula (A-1), a hydrolysate or hydrolytic condensate thereof, or the reaction product of the metal compound, hydrolysate or hydrolytic condensate thereof with a di- or trihydric alcohol having formula (A-2), and (B) a sensitizer containing a compound having formula (B-1). The resist composition is adapted to change a solubility in developer upon exposure to high-energy radiation, has high resolution and sensitivity, and forms a pattern of good profile with minimal edge roughness after exposure. ##STR00001##
Quantum dot-polymer composite pattern, production method thereof, and electronic device including the same
A quantum dot-polymer composite pattern including at least one repeating section configured to emit light of a predetermined wavelength, and a production method and a display device including the quantum dot-polymer composite are disclosed. The quantum dot-polymer composite includes a polymer matrix including linear polymer including a carboxylic acid group-containing repeating unit and a plurality of cadmium-free quantum dots dispersed in the polymer matrix, has an absorption rate of greater than or equal to about 85% for light at wavelength of about 450 nm, and has an area ratio of a hydroxy group peak relative to an acrylate peak of greater than or equal to about 2.6 in Fourier transform infrared spectroscopy.
MICRO AND NANO STRUCTURING OF A DIAMOND SUBSTRATE
A process of structuring a diamond substrate, comprising the steps of (a) depositing an adhesion layer on a face of the diamond substrate; (b) coating a resist layer on the adhesion layer; (c) removing parts of the resist layer so as to expose parts of the adhesion layer and form a corresponding structuring mask; (d) etching the adhesion layer and the diamond substrate (2) through the structuring mask so as to structure the diamond substrate; wherein the adhesion layer is a non-metallic compound comprising oxides.
Positive-type photosensitive resin composition and cured film prepared therefrom
The present invention relates to a positive-type photosensitive resin composition and a cured film prepared therefrom. The positive-type photosensitive resin composition comprises an acrylic copolymer having a dissolution rate to a developer in a specific range and a compound containing a phenolic hydroxyl group, so that it is possible to attain a high contrast and a high sensitivity pattern when a cured film is formed. Further, it is possible to further enhance the adhesiveness of a pattern when a half-tone, as well as a full-tone, is formed.
PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, AND DISPLAY DEVICE
A photosensitive resin composition includes a siloxane resin (A), particles (B) having a median diameter of 0.2 to 0.6 μm, and a naphthoquinone diazide compound (C), wherein the siloxane resin (A) contains at least 20 to 60 mol % in total of a repeating unit represented by general formula (1):
##STR00001##
wherein R.sup.1 represents an aryl group having 6 to 18 carbon atoms or an aryl group having 6 to 18 carbon atoms in which all or part of hydrogen is substituted.
PHOTOSENSITIVE RESIN COMPOSITION AND DISPLAY DEVICE COMPRISING SAME
Proposed is a photosensitive resin composition including a siloxane copolymer having both a thermosetting functional group and a photocurable functional group. The composition, according to this disclosure, is capable of both thermal curing and photo-curing and thus can form a stable cured film in a flexible display process where a low-temperature process of 150° C. or less is essential.
Method for optical waveguide fabrication
A method for producing an optical waveguide by: (a) depositing a first composition: (i) a polysiloxane comprising epoxy and alkenyl groups with refractive index no greater than 1.50, (ii) a compound comprising at least one epoxy group and refractive index no greater than 1.49, and (iii) a polysiloxane having refractive index at least 1.50; (iv) a photo acid generator; (v) a hydrosilylation catalyst, (vi) an inhibitor for hydrosilylation; (b) curing by exposure to ultraviolet light; (c) removing the uncured portion to produce a patterned core layer; (d) after a time from 20 to 300 hours depositing a second composition comprising: (i) a polysiloxane comprising epoxy groups with refractive index no greater than 1.49, and (ii) a compound comprising at least two epoxy groups with a refractive index no greater than 1.49 and an alcohol having refractive index no more than 1.45 (iii) at least one photo acid generator.
Chemical Composition for Tri-Layer Removal
A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.
RADIATION SENSITIVE COMPOSITION
A compound of Formula (5-1) or Formula (5-3):
##STR00001##
where R.sup.17 and R.sup.21 are each an ethyl group; R.sup.22 and R.sup.23 are each a methyl group; and R.sup.16 and R.sup.20 are each a methoxy group.
Siloxane polymer compositions and their use
The present invention provides a method for covering a substrate, and includes the following operations: (a) admixing at least four different silane monomers and at least one bi-silane to a first solvent(s) to form a mixture, with the proviso that at least one of the silane monomers or the bi-silane comprises an active group capable of achieving cross-linking to adjacent siloxane polymer chains of the siloxane polymer composition; (b) subjecting the mixture to an acid treatment so that the silane monomers are at least partially hydrolysed, and the hydrolysed silane monomers, the silane monomers and the bi-silane are at least partially polymerized and cross-linked; (c) optionally changing the first solvent to a second solvent; and (d) subjecting the mixture to further cross-linking of the siloxane polymer to achieve a predetermined degree of cross-linking, depositing the siloxane polymer composition on the substrate, and optionally curing the deposited siloxane polymer composition.