Techniques for EUV resist pattern transfer using a graded hardmask are provided. In one aspect, a method of patterning is provided. The method includes: forming a graded hardmask on a device stack; depositing a resist onto the graded hardmask; patterning the resist to form a pattern in the resist having at least one feature; modifying at least one surface region to increase an etch rate of the graded hardmask; transferring the pattern from the resist to the graded hardmask; and transferring the pattern from the graded hardmask to at least one underlying layer of the device stack. A device structure formed by the patterning method is also provided.

Wth a prepolymer composition containing at least one mono or oligomer component with at least one polymerizable C—C double bond as well as at least one multifunctional monomer component, the multifunctional monomer component a multifunctional monomer component is contained with at least two thiol groups selected from the group: 3-Mercaptopropionates, 3-Mercaptoacetates, thioglycolates, and alkylthiols, wherein the mono or oligomer component with at least one polymerizable double bond is selected from the group acrylates, methyl acrylates, vinyl ethers, allyl ethers, propenyl ethers, alkenes, dienes, unsaturated esters, allyl triazines, allyl isocyanates, and N-vinyl amides, and wherein at least one surface-active anti-adhesive additive selected from the group alkyl (meth)acrylates, polysiloxane (meth)acrylates, perfluoroalkyl (meth)acrylates, perfluoropolyether (meth)acrylates, alkyl vinyl ethers, polysiloxane vinyl ethers, perfluoroalkyl vinyl ethers, and perfluoropolyether vinyl ethers, as well as a photoinitiator are contained, as well as the use thereof.

To provide a negative photosensitive resin composition which may be sufficiently cured even at a low exposure amount and which can impart good ink repellency to the upper surface of partition walls, a cured resin film and partition walls which have good ink repellency on the upper surface, and an optical element which has dots formed with good precision, having opening sections partitioned by partition walls uniformly coated with an ink. A negative photosensitive resin composition comprising an alkali-soluble resin or alkali-soluble monomer (A) having an ethylenic double bond, a photopolymerization initiator (B), a thiol compound (C) having at least 3 mercapto groups in one molecule, and an ink repellent agent (D), a cured resin film and partition walls formed by using the negative photosensitive resin composition, and an optical element having the partition walls located between a plurality of dots and their adjacent dots on a substrate surface.

There is provided a new material that can form a finer pattern and can be applied to adsorption/adhesion control of various cell species, proteins, viruses, and the like without the limitation of the light source. A light-degradable material comprising: a moiety that is capable of bonding to a surface of a substrate through a siloxane bond; and a structural unit of Formula (2-a) and/or Formula (2-b): ##STR00001##
(where R.sub.2 to R.sub.4 are saturated linear alkyl groups; X is a hydrogen atom or an alkyl group; Z is a carbanion or a sulfo anion; Q is an ester bond group, a phosphodiester bond group, an amido bond group, an alkylene group, or an phenylene group or a combination of these divalent groups; m.sub.1 is an integer of 1 to 200, and n is an integer of 1 to 10).

R.sup.1.sub.aR.sup.2.sub.bSi(R.sup.3).sub.4−(a+b)   (1)

A composition for a silicon-containing resist underlying film and for forming a resist underlying film that can be removed by a conventional method employing dry etching, but also by a method employing wet etching using a chemical liquid in a step for processing a semiconductor substrate or the like; and a composition for forming a resist underlying film for lithography and for forming a resist underlying film that has excellent storage stability and produces less residue in a dry etching step. A composition for forming a resist underlying film, the composition including a hydrolysis condensate of a hydrolysable silane mixture containing an alkyltrialkoxy silane and a hydrolysable silane of formula (1), wherein the contained amount of the alkyltrialkoxy silane in the mixture is 0 mol % or more but less than 40 mol % with respect to the total amount by mole of all of the hydrolysable silane contained in the mixture.

Example patterning materials and pattern films are described. One example patterning material includes polysiloxane. The polysiloxane includes at least one cyclic structure formed by silicon-oxygen (Si—O) bond repetitions and an organic group connected to a Si atom in the at least one cyclic structure. A subset of Si atoms in the at least one cyclic structure are substituted by a metal element, and/or at least one organic group includes a halogen element.

A photosensitive resin composition comprising (A) a silphenylene and polyether structure—containing polymer and (B) a photoacid generator is coated onto a substrate to form a photosensitive resin coating which has improved substrate adhesion, a pattern forming ability, crack resistance, and reliability as protective film.

The present invention relates to radiation of dual radiation/moisture curable compositions based on (meth)acrylate- and silane-terminated polymers that can be used as 3D printing materials and provide isotropic and elastomeric properties. The invention further relates to the use thereof as 3D printing materials and printing methods using said compositions.

The present invention relates to radiation or dual radiation/moisture curable compositions based on (meth)acrylate- and silane-terminated polyorganosiloxanes that can be used as 3D printing materials and provide isotropic and elastomeric properties. The invention further relates to the use thereof as 3D printing materials and printing methods using said compositions.

Provided is a substrate treating composition. The substrate treating composition includes a first monomer, a second monomer and an acid. The first monomer is represented by Formula 1 and the second monomer is represented by Formula 7. The molecular weight of the solid content of the substrate treating composition including the first monomer, the second monomer and the acid is from about 1,000 g/mol to about 50,000 g/mol.

X—Si(R1).sub.2(R2)   [Formula 1]

Y—Si(R3).sub.3   [Formula 7]