Patent classifications
G03F7/091
Backplane unit and its manufacturing method and display device
The present application provides a backplane unit, a manufacturing method thereof, and a display device. The manufacturing method includes the following steps: forming a photoresist layer on an array substrate; performing exposure on at least a portion of the photoresist layer corresponding to a light-emitting element; forming a light-shielding layer on at least a side of the photoresist layer away from the array substrate, wherein the light-shielding layer exposes at least a side portion of the light-emitting element; and laterally stripping the photoresist layer on the light-emitting element with a stripping solution to obtain the backplane unit.
UNDERLAYER OF MULTILAYER STRUCTURE AND METHODS OF USE THEREOF
A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate and a photoresist layer formed over the bottom layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, patterning the bottom layer and removing portions of the substrate through openings in the patterned bottom layer. In some embodiments, a middle layer is provided between the bottom layer and the photoresist layer. The material of the bottom layer includes at least one cross-linking agent that has been functionalized to decrease its affinity to other materials in the bottom layer.
Optical element, optical system, and optical apparatus
An optical element has an area in which a transmittance varies, includes first and second antireflection layers, and an absorption layer disposed between the first and second antireflection layers, and satisfies certain conditions.
METHOD OF REDUCING UNDESIRED LIGHT INFLUENCE IN EXTREME ULTRAVIOLET EXPOSURE
A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.
Method using silicon-containing underlayers
Methods of manufacturing electronic devices employing wet-strippable underlayer compositions comprising a condensate and/or hydrolyzate of a polymer comprising as polymerized units one or more first unsaturated monomers having a condensable silicon-containing moiety, wherein the condensable silicon-containing moiety is pendent to the polymer backbone, and one or more condensable silicon monomers are provided.
COATED UNDERLAYER FOR OVERCOATED PHOTORESIST
A method of forming a pattern, the method comprising applying a layer of a coating composition over a substrate; curing the applied coating composition to form a coated underlayer; and forming a photoresist layer over the coated underlayer, wherein the coating composition comprises a first material comprising two or more hydroxy groups; a second material comprising two or more glycidyl groups; an additive comprising a protected amino group; and a solvent.
Semiconductor Devices and Methods of Manufacturing
A single layer process is utilized to reduce swing effect interference and reflection during imaging of a photoresist. An anti-reflective additive is added to a photoresist, wherein the anti-reflective additive has a dye portion and a reactive portion. Upon dispensing the reactive portion will react with underlying structures to form an anti-reflective coating between the underlying structure and a remainder of the photoresist. During imaging, the anti-reflective coating will either absorb the energy, preventing it from being reflected, or else modify the optical path of reflection, thereby helping to reduce interference caused by the reflected energy.
SUBSTRATE SURFACE MODIFICATION WITH HIGH EUV ABSORBERS FOR HIGH PERFORMANCE EUV PHOTORESISTS
The present disclosure relates to a patterning structure having a radiation-absorbing layer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the radiation-absorbing layer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.
Underlying coating compositions for use with photoresists
New composition and methods are provided that include antireflective compositions that can exhibit enhanced etch rates in standard plasma etchants. Preferred antireflective coating compositions of the invention have decreased carbon content relative to prior compositions.
Material for forming organic film, substrate for manufacturing semiconductor device, method for forming organic film, patterning process, and compound for forming organic film
An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate, and a material for forming an organic film containing the compound. A material for forming an organic film, including: (A) a compound for forming an organic film shown by the following general formula (1A); and (B) an organic solvent, ##STR00001## noting that in the general formula (1B), when W.sub.1 represents ##STR00002## R.sub.1 does not represent any of ##STR00003##