Method of manufacturing a semiconductor device, includes forming a protective layer over substrate having a plurality of protrusions and recesses. The protective layer includes polymer composition including polymer having repeating units of one or more of:

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Wherein a, b, c, d, e, f, g, h, and i are each independently H, —OH, —ROH, —R(OH).sub.2, —NH.sub.2, —NHR, —NR.sub.2, —SH, —RSH, or —R(SH).sub.2, wherein at least one of a, b, c, d, e, f, g, h, and i on each repeating unit is not H. R, R.sub.1, and R.sub.2 are each independently a C1-C10 alkyl group, a C3-C10 cycloalkyl group, a C1-C10 hydroxyalkyl group, a C2-C10 alkoxy group, a C2-C10 alkoxy alkyl group, a C2-C10 acetyl group, a C3-C10 acetylalkyl group, a C1-C10 carboxyl group, a C2-C10 alkyl carboxyl group, or a C4-C10 cycloalkyl carboxyl group, and n is 2-1000. A resist layer is formed over the protective layer, and the resist layer is patterned.

An anti-reflective coating composition is provided. The anti-reflective coating composition of the present invention can be useful in preventing a pull-back phenomenon in which an anti-reflective coating layer tears on a corner of a pattern of a substrate during a heat curing process and improving gap-filling performance of the pattern since a crosslinker is attached to a polymer in the composition and the content of the low-molecular-weight crosslinker in the composition is minimized to regulate a heat curing initiation temperature.

A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer that includes a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2, ##STR00001##

Provided is an anti-reflective hardmask composition including: (a) a polymer composed of an indolocarbazole represented by the following Chemical Formula 1 or a polymeric blend containing the same; and (b) an organic solvent. ##STR00001##

A photoresist composition, including an acid-sensitive polymer and photoacid generator compound having Formula (I):

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wherein, EWG, Y, R, and M.sup.+ are the same as described in the specification.

An object of the present invention is to provide a composition for lithography capable of obtaining a film in contact with a resist layer or an underlayer film capable of forming a pattern excellent in exposure sensitivity the like. The object can be achieved by a composition for lithography containing a compound having at least one element selected from the group consisting of iodine, tellurium, and fluorine, or a resin having a constituent unit derived from the compound, wherein a total mass of the atoms in the compound is 15% by mass or more and 75% by mass or less.

A photoresist film is patterned into an array of island shapes with improved critical dimension uniformity and no phase edges by using two alternating phase shifting masks (AltPSMs) and one post expose bake (PEB). The photoresist layer is exposed with a first AltPSM having a line/space (L/S) pattern where light through alternating clear regions on each side of an opaque line is 180° phase shifted. Thereafter, there is a second exposure with a second AltPSM having a L/S pattern where opaque lines are aligned orthogonal to the lengthwise dimension of opaque lines in the first exposure, and with alternating 0° and 180° clear regions. Then, a PEB and subsequent development process are used to form an array of island shapes. The double exposure method enables smaller island shapes than conventional photolithography and uses relatively simple AltPSM designs that are easier to implement in production than other optical enhancement techniques.

A bottom antireflective coating composition and a method for forming a photoresist relief image. The coating composition comprises a resin containing a structural unit represented by the Formula (1), a structural unit represented by the Formula (2), and a structural unit represented by the Formula (3):

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The structural unit represented by the Formula (1), the structural unit represented by the Formula (2), and the structural unit represented by the Formula (3) is present in the resin in a molar ratio of (0.1-1000):(0.1-1000):1.

A method of manufacturing a semiconductor device includes forming a protective layer over a substrate. The hydrophilicity of the protective layer is reduced. A resist layer is formed over the protective layer, and the resist layer is patterned.

Provided is a composition which is for forming a resist underlayer film and with which the amount of a sublimate derived from a low-molecular-weight component such as an oligomer can be reduced, the composition comprising, for example, an organic solvent and a polymer having a repeating unit represented by formula (1-1), wherein the content of a low-molecular-weight component having a weight average molecular weight of 1,000 or less is 10 mass % or less in the polymer.

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