A composition for film formation includes a hydrolysis compound and a solvent composition. The hydrolysus compound is a hydrolysis product of a metal compound including a hydrolyzable group, a hydrolytic condensation product of the metal compound, a condensation product of the metal compound and a compound represented by formula (1), or a combination thereof. The metal compound includes a metal element from group 3, 4, 5, 6, 7, 8, 9, 10, 11, 12 or 13, or a combination thereof. The solvent composition includes an alcohol organic solvent, and a non-alcohol organic solvent that does not include an alcoholic hydroxyl group and that include a group including a hetero atom.

R.sup.1X.sup.1).sub.n  (1)

A composition comprising a carbosilane polymer formed from at least one carbosilane monomer and at least one carbonyl contributing monomer. In some embodiments, the composition is suitable as gap filling and planarizing material, and may optionally include at least one chromophore for photolithography applications.

A method of forming a pattern, the method comprising: applying a photoresist underlayer composition over a substrate to provide a photoresist underlayer; forming a photoresist layer over the photoresist underlayer; patterning the photoresist layer; and transferring a pattern from the patterned photoresist layer to the photoresist underlayer. The photoresist underlayer composition includes a polymer that includes a repeating unit represented by Formula 1 as described herein, a compound including a substituent group represented by Formula 2 as described herein, and a solvent.

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The present invention relates to a photocurable coating composition for forming a low refractive layer, a method for preparing an antireflection film using the photocurable coating composition, and an anti-reflective film prepared by using the photocurable coating composition. According to the present invention, a low refractive layer is formed of a photocurable coating composition containing two or more types of photo-polymerizable compounds, a photoinitiator, surface-treated hollow inorganic nanoparticles, and surface-treated solid inorganic nanoparticles.

A material for forming an underlayer film according to the present invention is a material for forming an underlayer film which is used to form a resist underlayer film used in a multi-layer resist process, the material including a cyclic olefin polymer which has a repeating structural unit [A] represented by Formula (1) and a repeating structural unit [B] represented by Formula (2), in which a molar ratio [A]/[B] of the structural unit [A] to the structural unit [B] in the cyclic olefin polymer is greater than or equal to 5/95 and less than or equal to 95/5.

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Provided is a composition for forming an organic anti-reflective coating layer used in a negative tone development, which not only enhance an adhesion to a photoresist while having a high refractive index and a high etch rate but also improve a pattern profile of undercut etc. The composition an isocyanurate compound containing at least one moiety which is represented by Formula 2; a polymer represented by Formula 3 and an organic solvent for dissolving the above-mentioned components.

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The present disclosure relates to the technical field of semiconductors, and provides a method of processing a photoresist layer, and a photoresist layer. The method of processing a photoresist layer includes: forming a photoresist layer on a target layer, where the photoresist layer includes a first part close to the target layer and a second part away from the target layer; performing first exposure processing on the photoresist layer, and forming an exposure image in the first part of the photoresist layer; processing the second part of the photoresist layer by using a first process, such that the second part forms a third part, where a photosensitivity of the third part is higher than that of the first part; and stripping the third part.

The present disclosure relates to the technical field of semiconductors, and provides a method of forming a photoresist pattern, and a photoresist structure. The method of forming a photoresist pattern includes: forming a photoresist structure on a target layer, where the photoresist structure includes a photoresist layer provided on the target layer, and an optical wave transmission layer provided on the photoresist layer; and performing exposure processing on the photoresist structure in a first medium, to form an exposure image in the photoresist layer, where the optical wave transmission layer is configured to improve lithographic resolution of the photoresist layer.

The present disclosure provides a method of forming a photoresist pattern and a projection exposure apparatus. The forming method includes: providing a photoresist layer, and disposing the photoresist layer under a projection objective, wherein a light refracting plate is located between the photoresist layer and the projection objective; and performing an exposure processing on the photoresist layer through the projection objective and the light refracting plate, and forming an exposure image in the photoresist layer, wherein the light refracting plate is configured to reduce a wavelength of optical waves entering the photoresist layer.

There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group.