A resist underlayer composition and a method of forming patterns, the composition including a solvent; and a polymer that includes a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2, ##STR00001##

Provided is an anti-reflective hardmask composition including: (a) a polymer composed of an indolocarbazole represented by the following Chemical Formula 1 or a polymeric blend containing the same; and (b) an organic solvent. ##STR00001##

The present invention relates to a structure for a quantum dot barrier rib and a process for preparing the same. The structure for a quantum dot barrier rib of the present invention comprises a cured film having a uniform film thickness and an appropriate range of film thickness. Here, the reflectance R.sub.SCI measured by the SCI (specular component included) method and the reflectance R.sub.SCE measured by the SCE (specular component excluded) method are reduced, and the ratio between them (R.sub.SCE/R.sub.SCI) is appropriately adjusted, so that it is possible to satisfy such characteristics as high light-shielding property and low reflectance at the same time while the resolution and pattern characteristics are maintained to be excellent. In addition, when the structure for a quantum dot barrier rib is prepared, it is possible to form a multilayer pattern having a uniform film thickness suitable for the quantum dot barrier ribs in a single development process. Thus, it can be advantageously used for a quantum dot display.

According to one embodiment, a pattern forming method includes forming a resist film including a first core material pattern and a second core material pattern, on a first film laminated on a substrate; forming a second film at least on sidewalls of the first and second core material patterns; removing the first core material pattern while not removing the second core material pattern and the second film; and processing the first film by using, as a mask, the second core material pattern and the second film.

An object of the present invention is to provide a composition for lithography capable of obtaining a film in contact with a resist layer or an underlayer film capable of forming a pattern excellent in exposure sensitivity the like. The object can be achieved by a composition for lithography containing a compound having at least one element selected from the group consisting of iodine, tellurium, and fluorine, or a resin having a constituent unit derived from the compound, wherein a total mass of the atoms in the compound is 15% by mass or more and 75% by mass or less.

A method of manufacturing a semiconductor device includes forming a protective layer over a substrate. The hydrophilicity of the protective layer is reduced. A resist layer is formed over the protective layer, and the resist layer is patterned.

A resist underlayer composition including a polymer including a main chain, a side chain, or a main chain and a side chain including a heterocycle including two or more nitrogen atoms in the ring of the heterocycle, a compound including a moiety represented by Chemical Formula 1, and a solvent is provided. A method of forming patterns using the resist underlayer composition is also provided

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Provided are a hardmask composition including a polymer including a structural unit represented by Chemical Formula 1 and a structural unit represented by Chemical Formula 2, and a solvent, a hardmask layer manufactured from the hardmask composition, and a method of forming patterns from the hardmask composition, wherein the definitions of Chemical Formula 1 and Chemical Formula 2 are as described in the specification.

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A hardmask composition, a hardmask layer including a cured product of the hardmask composition, and a method of forming patterns from the hardmask composition, the hardmask composition includes a compound represented by Chemical Formula 1, and a solvent,

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A patterning method includes forming a multilayer photoresist stack on a substrate. The multilayer photoresist stack includes a first layer of a wet photoresist, deposited by spin-on deposition, over a second layer of a dry photoresist, deposited by vapor deposition. The multilayer photoresist stack is exposed to a first pattern of actinic radiation including relative, spatially-varying doses of actinic radiation and including high-dose regions, mid-dose regions and low-dose regions. The multilayer photoresist stack and the first pattern of actinic radiation are configured such that after the exposing the multilayer photoresist stack to the first pattern of actinic radiation, in the high-dose regions, developability of both the first layer and the second layer is changed; in the mid-dose regions, developability of the first layer is changed while developability of the second layer is unchanged; in the low-dose regions, developability of both the first layer and the second layer is unchanged.