The invention relates to a method for manufacturing a flat polymeric stack, said stack comprising one or more first and one second layer of (co)polymer (20, 30) stacked one on the other, the first underlying (co)polymer layer (20) not having undergone any prior treatment allowing its crosslinking, at least one of the (co)polymer layers initially being in a liquid or viscous state, said method being characterized in that the upper layer (30), known as the top coat (TC), is deposited on the first layer (20) in the form of a prepolymer composition (pre-TC), comprising one or more monomer(s) and/or dimer(s) and/or oligomer(s) and/or polymer(s) in solution, and in that it is then subjected to a heat treatment capable of causing a crosslinking reaction of the molecular chains within said layer (30, TC).

The disclosure provides in some embodiments a method for fabricating a photoresist pattern, a color filter and a method for fabricating the same, and a display device. The method for fabricating a photoresist pattern includes coating negative photoresist on a base substrate to form a first photoresist layer, coating positive photoresist on the first photoresist layer to form a second photoresist layer, conducting a first exposure process on first regions of the second photoresist layer, conducting a first developing process to remove the positive photoresist within the first regions of the second photoresist layer and the negative photoresist within second regions of the first photoresist layer, so as to obtain a first photoresist pattern and a second photoresist pattern, conducting a second exposure process on the first photoresist pattern and the second photoresist pattern, and conducting a second developing process to remove the first photoresist pattern.

A mask, a manufacturing method thereof, and a patterning method employing the mask. In the mask, a plurality of masks can be combined into one mask. The pattern area (01) of the mask is provided with a first pattern section (10) and a second pattern section (20) which are not overlapped with each other; light of a first wavelength can run through the first pattern section (10) but light of a second wavelength cannot run through the first pattern section; the light of the second wavelength can run thorough the second pattern section (20) but the light of the first wavelength cannot run through the second pattern section; and the light of the first wavelength and the light of the second wavelength can run through the non-pattern area, or any of the light of the first wavelength and the light of the second wavelength cannot run through the non-pattern area. The mask is obtained by combining a plurality of masks.

A mask, a manufacturing method thereof, and a patterning method employing the mask. In the mask, a plurality of masks can be combined into one mask. The pattern area (01) of the mask is provided with a first pattern section (10) and a second pattern section (20) which are not overlapped with each other; light of a first wavelength can run through the first pattern section (10) but light of a second wavelength cannot run through the first pattern section; the light of the second wavelength can run thorough the second pattern section (20) but the light of the first wavelength cannot run through the second pattern section; and the light of the first wavelength and the light of the second wavelength can run through the non-pattern area, or any of the light of the first wavelength and the light of the second wavelength cannot run through the non-pattern area. The mask is obtained by combining a plurality of masks.

Approaches based on differential hardmasks for modulation of electrobucket sensitivity for semiconductor structure fabrication, and the resulting structures, are described. In an example, a method of fabricating an interconnect structure for an integrated circuit includes forming a hardmask layer above an inter-layer dielectric (ILD) layer formed above a substrate. A plurality of dielectric spacers is formed on the hardmask layer. The hardmask layer is patterned to form a plurality of first hardmask portions. A plurality of second hardmask portions is formed alternating with the first hardmask portions. A plurality of electrobuckets is formed on the alternating first and second hardmask portions and in openings between the plurality of dielectric spacers. Select ones of the plurality of electrobuckets are exposed to a lithographic exposure and removed to define a set of via locations.

A substrate having film type pattern and the manufacturing method, the substrate having film type pattern includes: a substrate; at least film type pattern layer which is allocated on the substrate; and a peripheral pattern layer which is allocated around the film type pattern layer.

A method for forming a pattern on a substrate is described. The method includes providing a substrate, forming a photosensitive layer over the substrate, exposing the photosensitive layer to a first exposure energy through a first mask, exposing the photosensitive layer to a second exposure energy through a second mask, baking the photosensitive layer, and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a developer solution, at least one photo-acid generator (PAG), and at least one photo-base generator (PBG). A portion of the layer exposed to the second exposure energy overlaps with a portion exposed to the first exposure energy.

A method for forming a pattern on a substrate is described. The method includes providing a substrate, forming a photosensitive layer over the substrate, exposing the photosensitive layer to a first exposure energy through a first mask, exposing the photosensitive layer to a second exposure energy through a second mask, baking the photosensitive layer, and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a developer solution, at least one photo-acid generator (PAG), and at least one photo-base generator (PBG). A portion of the layer exposed to the second exposure energy overlaps with a portion exposed to the first exposure energy.

A manufacturing system for fabricating self-aligned grating elements with a variable refractive index includes a patterning system, a deposition system, and an etching system. The manufacturing system performs a lithographic patterning of one or more photoresists to create a stack over a substrate. The manufacturing system performs a conformal deposition of a protective coating on the stack. The manufacturing system performs a deposition of a first photoresist of a first refractive index on the protective coating. The manufacturing system performs a removal of the first photoresist to achieve a threshold value of first thickness. The manufacturing system performs a deposition of a second photoresist of a second refractive index on the first photoresist. The second refractive index is greater than the first refractive index. The manufacturing system performs a removal of the second photoresist to achieve a threshold value of second thickness to form a portion of an optical grating.

A method of forming a cured layer on a substrate can include applying on the exterior surface of the substrate a first liquid film and subjecting the first liquid film to actinic radiation in at least one first region of the film. The actinic radiated region can modify the substrate surface such that the drop spreading of a region not subjected to actinic radiation is larger than the drop spreading in a region subjected to actinic radiation.