In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.

In a pattern formation method, a bottom layer is formed over an underlying layer. A middle layer is formed over the bottom layer. A resist pattern is formed over the middle layer. The middle layer is patterned by using the resist pattern as an etching mask. The bottom layer is patterned by using the patterned middle layer. The underlying layer is patterned. The middle layer contains silicon in an amount of 50 wt % or more and an organic material. In one or more of the foregoing and following embodiments, an annealing operation is further performed after the middle layer is formed.

A process for making an interconnect of a group III-V semiconductor device includes the steps of applying a positive photoresist layer and an image-reversible photoresist layer, subjecting the image-reversible photoresist and positive photoresist layers to patternwise exposure, subjecting the image-reversible photoresist layer to image reversal bake, subjecting the image-reversible photoresist and positive photoresist layers to flood exposure, subjecting the image-reversible photoresist and positive photoresist layers to development, depositing a diffusion barrier layer, depositing a copper layer, and removing the image-reversible photoresist and positive photoresist layers.

Approaches based on differential hardmasks for modulation of electrobucket sensitivity for semiconductor structure fabrication, and the resulting structures, are described. In an example, a method of fabricating an interconnect structure for an integrated circuit includes forming a hardmask layer above an inter-layer dielectric (ILD) layer formed above a substrate. A plurality of dielectric spacers is formed on the hardmask layer. The hardmask layer is patterned to form a plurality of first hardmask portions. A plurality of second hardmask portions is formed alternating with the first hardmask portions. A plurality of electrobuckets is formed on the alternating first and second hardmask portions and in openings between the plurality of dielectric spacers. Select ones of the plurality of electrobuckets are exposed to a lithographic exposure and removed to define a set of via locations.

A method of patterning a substrate by selective deprotection via dye diffusion. The method includes forming a photoresist pattern on the substrate from a layer of photoresist deposited on the substrate, depositing a first overcoat on the photoresist pattern, the first overcoat filling openings defined by the photoresist pattern and covering the photoresist pattern, the first overcoat including an organic film containing a dye. The method further includes diffusing the dye from the first overcoat a predetermined diffusion length into the photoresist pattern, resulting in diffusion regions in the photoresist pattern, and removing the first overcoat from the substrate. The method further includes activating the solubility-shifting agent in the diffusion regions of the photoresist pattern using a second actinic radiation, depositing a second overcoat on the substrate, and developing the substrate with a second developer resulting in removal of soluble portions of the diffusion regions of the photoresist pattern.

This disclosure discloses a method for preparing an indium pillar, a chip substrate and a chip. The method includes: applying a first photoresist layer on a substrate; applying a second photoresist layer on the first photoresist layer; covering a part of a surface of the second photoresist layer; underexposing the part of the second photoresist layer to obtain a processed second photoresist layer; developing and fixing the processed second photoresist layer to form an undercut structure; etching the first photoresist layer through the undercut structure to form an expose area; and depositing an indium material on the exposed area to form an indium pillar solder.

A first object of the present invention is to provide a transfer film that is capable of forming a resist pattern having excellent resolution. In addition, a second object of the present invention is to provide a transfer film that is capable of forming a resin pattern having excellent planarity. Further, a third object of the present invention is to provide a manufacturing method for a laminate, a manufacturing method for a circuit wire, and a manufacturing method for an electronic device, using the above-described transfer film.

The transfer film of the present invention is a transfer film having a temporary support and a composition layer disposed on the temporary support, in which the composition layer includes a photosensitive resin layer and a water-soluble resin layer, where the transfer film is obtained by laminating the temporary support, the water-soluble resin layer, and the photosensitive resin layer in this order or obtained by laminating the temporary support, the photosensitive resin layer, and the water-soluble resin layer in this order.

The water-soluble resin layer contains a compound A having a group represented by General Formula (1).

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In the formula, * represents a bonding position.

A grating coupler may be fabricated by exposing a photopolymer layer to grating forming light for forming periodic refractive index variations in the photopolymer layer. The photopolymer layer may be exposed to apodization light for reducing an amplitude of the periodic refractive index variations in a spatially-selective manner. The apodization may also be achieved or facilitated by subjecting outer surface(s) of the photopolymer layer to a chemically reactive agent that causes the refractive index contrast to be reduced near the surface(s) of application. The apodized refractive index profile of the gratings facilitates the reduction of optical crosstalk between different gratings of the grating coupler.

Provided are a pattern forming method which includes a step of preparing a laminate having a first photosensitive layer, a substrate having a region transparent to an exposure wavelength, and a second photosensitive layer in this order, a step of exposing the first photosensitive layer, a step of exposing the second photosensitive layer, a step of developing the exposed first photosensitive layer to form a first resin pattern, and a step of developing the exposed second photosensitive layer to form a second resin pattern, and in which a dominant wavelength λ.sub.1 of an exposure wavelength in the step of exposing the first photosensitive layer and a dominant wavelength λ.sub.2 of an exposure wavelength in the step of exposing the second photosensitive layer satisfy a relation of λ.sub.1 ≠ λ.sub.2, a laminate, and applications of these.

Provided are a pattern forming method which includes a step of preparing a laminate having a first photosensitive layer, a substrate having a region transparent to an exposure wavelength, and a second photosensitive layer in this order, a step of exposing the first photosensitive layer, a step of exposing the second photosensitive layer, a step of developing the exposed first photosensitive layer to form a first resin pattern, and a step of developing the exposed second photosensitive layer to form a second resin pattern, and in which a dominant wavelength λ.sub.1 of an exposure wavelength in the step of exposing the first photosensitive layer and a dominant wavelength λ.sub.2 of an exposure wavelength in the step of exposing the second photosensitive layer satisfy a relation of λ.sub.1 ≠ λ.sub.2, a laminate, and applications of these.