A photosensitive resin structure for a flexographic printing plate, containing (a): a support; (b): a photosensitive resin composition layer which is located on the support (a) and which contains a thermoplastic elastomer having a copolymer site of a monovinyl-substituted aromatic hydrocarbon and a conjugated diene; and (c): an infrared ray ablation layer which is laminated on the photosensitive resin composition layer (b) and which comprises a resin and carbon black, is ablatable with an infrared laser, and is a layer shielding a light beam other than infrared ray, wherein the resin in the infrared ray ablation layer (c) contains a copolymer of a monovinyl-substituted aromatic hydrocarbon and a conjugated diene, or a hydrogenated copolymer of a monovinyl-substituted aromatic hydrocarbon and a conjugated diene, and a primary particle diameter of the carbon black contained in the infrared ray ablation layer (c) is 13 nm or larger and 25 nm or smaller.

A photosensitive resin structure for a flexographic printing plate, containing (a): a support; (b): a photosensitive resin composition layer which is located on the support (a) and which contains a thermoplastic elastomer having a copolymer site of a monovinyl-substituted aromatic hydrocarbon and a conjugated diene; and (c): an infrared ray ablation layer which is laminated on the photosensitive resin composition layer (b) and which comprises a resin and carbon black, is ablatable with an infrared laser, and is a layer shielding a light beam other than infrared ray, wherein the resin in the infrared ray ablation layer (c) contains a copolymer of a monovinyl-substituted aromatic hydrocarbon and a conjugated diene, or a hydrogenated copolymer of a monovinyl-substituted aromatic hydrocarbon and a conjugated diene, and a primary particle diameter of the carbon black contained in the infrared ray ablation layer (c) is 13 nm or larger and 25 nm or smaller.

Materials and methods to immobilize photoacid generators on semiconducting substrates are provided. PAG-containing monomers are copolymerized with monomers to allow the polymer to bind to a surface, and optionally copolymerized with monomers to enhance solubility to generate PAG-containing polymers. The PAG-containing monomers can be coated onto a surface, where the immobilized PAGs can then be used to pattern materials coated on top of the immobilized PAGs, allowing direct patterning without the use of a photoresist, thereby reducing process steps and cost. The disclosed materials and processes can be used to produce conformal coatings of controlled thicknesses.

Materials and methods to immobilize photoacid generators on semiconducting substrates are provided. PAG-containing monomers are copolymerized with monomers to allow the polymer to bind to a surface, and optionally copolymerized with monomers to enhance solubility to generate PAG-containing polymers. The PAG-containing monomers can be coated onto a surface, where the immobilized PAGs can then be used to pattern materials coated on top of the immobilized PAGs, allowing direct patterning without the use of a photoresist, thereby reducing process steps and cost. The disclosed materials and processes can be used to produce conformal coatings of controlled thicknesses.

A method of forming a masking element is provided. The method includes forming a photoresist material having a polymer backbone over a substrate, where the polymer backbone includes a linking group that links a first polymer segment to a second polymer segment, each of the first and the second polymer segments having an ultraviolet (UV) curable group. The method includes exposing the photoresist material under a first UV radiation to break the link between the first polymer segment and the second polymer segment. The method includes exposing the photoresist material under a second UV radiation different from the first UV radiation to form a patterned resist layer. And the method includes developing the patterned resist layer to form a masking element.

A method of forming a masking element is provided. The method includes forming a photoresist material having a polymer backbone over a substrate, where the polymer backbone includes a linking group that links a first polymer segment to a second polymer segment, each of the first and the second polymer segments having an ultraviolet (UV) curable group. The method includes exposing the photoresist material under a first UV radiation to break the link between the first polymer segment and the second polymer segment. The method includes exposing the photoresist material under a second UV radiation different from the first UV radiation to form a patterned resist layer. And the method includes developing the patterned resist layer to form a masking element.

A method of forming a semiconductor structure is disclosed. A multi-layer structure is formed over a substrate. A photoresist stack with a stepped sidewall is formed on the multi-layer structure. A pattern of the photoresist stack is transferred to the multi-layer structure.

A method of forming a semiconductor structure is disclosed. A multi-layer structure is formed over a substrate. A photoresist stack with a stepped sidewall is formed on the multi-layer structure. A pattern of the photoresist stack is transferred to the multi-layer structure.

Techniques for making fluid flow devices are described. The technique is based on radiation-induced conversion of a radiation-sensitive substance from a first state to a second state. With adjustment of the radiation parameters such as power and scan speed we can control the depths of barriers that are formed within a substrate which can produce 3D flow paths. We have used this depth-variable patterning protocol for stacking and sealing of multilayer substrates, for assembly of backing layers for two-dimensional (2D) lateral flow devices and for fabrication of 3D devices. Since the 3D flow paths can be formed via a single laser-writing process by controlling the patterning parameters, this is a distinct improvement over other methods that require multiple complicated and repetitive assembly procedures.

Techniques for making fluid flow devices are described. The technique is based on radiation-induced conversion of a radiation-sensitive substance from a first state to a second state. With adjustment of the radiation parameters such as power and scan speed we can control the depths of barriers that are formed within a substrate which can produce 3D flow paths. We have used this depth-variable patterning protocol for stacking and sealing of multilayer substrates, for assembly of backing layers for two-dimensional (2D) lateral flow devices and for fabrication of 3D devices. Since the 3D flow paths can be formed via a single laser-writing process by controlling the patterning parameters, this is a distinct improvement over other methods that require multiple complicated and repetitive assembly procedures.