A resin including a highly sequenced copolymer is presented, and the preparation and application of its resist composition is presented. The resist has excellent performance and can promote the development of integrated circuits.

A method of patterning a substrate includes depositing an overcoat in openings of a relief pattern. The relief pattern includes a solubility-shifting agent and a deprotectable monomer sensitive to the solubility-shifting agent. The overcoat includes another deprotectable monomer sensitive to the solubility-shifting agent. The overcoat has a solubility threshold relative to a predetermined developer that is lower than the solubility threshold of the relief pattern relative to the developer. The method includes activating the solubility-shifting agent to at least reach the solubility threshold of the overcoat without reaching the solubility threshold of the relief pattern, diffusing the solubility-shifting agent a predetermined distance from structures of the relief pattern into the overcoat to form soluble regions in the overcoat, and developing the substrate with the developer to remove the soluble regions of the overcoat. The soluble regions are soluble in the developer while the relief pattern remains insoluble in the developer.

A method for producing a laminate of a cured material from a photosensitive resin composition (1) and a photosensitive resin composition (2), wherein the method includes a step of obtaining a laminated material by laminating the composition (2) onto the composition (1); a step of subjecting the laminated material to photoexposure to obtain a photocured material; a step of developing the photocured material to obtain a developed material; and a step of heating the developed material to obtain a laminate, wherein the photoexposure dose required to cure the composition (2) is smaller than the dose required to cure the composition (1), and wherein the composition (1) contains an epoxy resin (1) having a weight-average molecular weight Mw of 5,000 to 600,000, a softening point of at least 140° C., and an epoxy equivalent weight of not more than 2,300.

The present disclosure provides a dual developing method for defining different resist patterns. In the present disclosure, by using a positive-tone development (PTD) process followed by a negative-tone development (NTD) process, and by allowing a first pattern to be transparent under a subsequent second photomask, different patterns can be formed on a same resist layer. As a result, problems encountered in prior art, such as insufficient DOF, formation of abnormal patterns, self-alignment issue, overlying problem and other problems, can be successfully addressed.

A composite photoresist material and method of making the composite photoresist material. The composite photoresist material includes: a photoresist layer devoid of a phenoxy resin, and a photoresist layer containing a phenoxy resin.

A lithography method is described. The method includes forming a resist layer over a substrate, performing a treatment on the resist layer to form an upper portion of the resist layer having a first molecular weight and a lower portion of the resist layer having a second molecular weight less than the first molecular weight, performing an exposure process on the resist layer, and performing a developing process on the resist layer to form a patterned resist layer.

A method for manufacturing a display device including providing a protection resin having a base resin, a first initiator, and a second initiator to the non-display area, irradiating light having a first wavelength region to the protection resin to form a preliminary protection layer, bending the flexible substrate so that the bending part has a first curvature radius, and additionally curing the preliminary protection layer to form a protection layer.

A method for manufacturing a display device including providing a protection resin having a base resin, a first initiator, and a second initiator to the non-display area, irradiating light having a first wavelength region to the protection resin to form a preliminary protection layer, bending the flexible substrate so that the bending part has a first curvature radius, and additionally curing the preliminary protection layer to form a protection layer.

The present disclosure provides an apparatus for manufacturing a semiconductor structure. The apparatus includes a stage, an optical transceiver over the stage, configured to obtain a first profile of a first surface of a substrate, an acoustic transceiver over the stage, configured to obtain a second profile of a top surface of a photo-sensitive layer over the substrate, wherein the stage is adapted to be displaced based on the first profile and the second profile.

A method for manufacturing the circuit board comprises following steps of forming a silver layer on each of two opposite surfaces of an insulating substrate, and forming a copper layer on each silver layer, thereby obtaining a middle structure; defining at least one through-hole on the middle structure, and each through-hole extending through each copper layer; forming a copper wiring layer on the copper layers to cover each through-hole and a portion region of the copper layers, the copper wiring layer comprising a copper conductive structure passing through each through-hole, the copper conductive structure connecting the copper layers; removing the copper layers not covered by the copper wiring layer; and etching the silver layers to form a silver wiring layer corresponding to the copper wiring layer, wherein a first etching liquid, which does not etch the copper wiring layer, is used for etching the silver layers.