The present disclosure relates to a patterning structure having a radiation-absorbing layer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the radiation-absorbing layer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

A method of reducing junction resistance variation for junctions in quantum information processing devices fabricated using two-step deposition processes. In one aspect, a method includes providing a dielectric substrate (208), forming a first resist layer (210) on the dielectric substrate, forming a second resist layer (212) on the first resist layer, and forming a third resist layer (214) on the second resist layer. The first resist layer includes a first opening (216) extending through a thickness of the first resist layer, the second resist layer includes a second opening (218) aligned over the first opening and extending through a thickness of the second resist layer, and the third resist layer includes a third opening (220) aligned over the second opening and extending through a thickness of the third resist layer.

A grating coupler may be fabricated by exposing a photopolymer layer to grating forming light for forming periodic refractive index variations in the photopolymer layer. The photopolymer layer may be exposed to apodization light for reducing an amplitude of the periodic refractive index variations in a spatially-selective manner. The apodization may also be achieved or facilitated by subjecting outer surface(s) of the photopolymer layer to a chemically reactive agent that causes the refractive index contrast to be reduced near the surface(s) of application. The apodized refractive index profile of the gratings facilitates the reduction of optical crosstalk between different gratings of the grating coupler.

The present invention relates to a structure for a quantum dot barrier rib and a process for preparing the same. The structure for a quantum dot barrier rib of the present invention comprises a cured film having a uniform film thickness and an appropriate range of film thickness. Here, the reflectance R.sub.SCI measured by the SCI (specular component included) method and the reflectance R.sub.SCE measured by the SCE (specular component excluded) method are reduced, and the ratio between them (R.sub.SCE/R.sub.SCI) is appropriately adjusted, so that it is possible to satisfy such characteristics as high light-shielding property and low reflectance at the same time while the resolution and pattern characteristics are maintained to be excellent. In addition, when the structure for a quantum dot barrier rib is prepared, it is possible to form a multilayer pattern having a uniform film thickness suitable for the quantum dot barrier ribs in a single development process. Thus, it can be advantageously used for a quantum dot display.

A photopolymerisable relief precursor includes a dimensionally stable carrier, and a photopolymerisable relief-forming layer at least containing a crosslinkable elastomeric binder, an ethylenically unsaturated monomer, a migration-capable, surface-active additive, a photoinitiator activatable with UVA light and a photoinitiator activatable with UVC light. A method for producing a relief structure.

A photopolymerisable relief precursor includes a dimensionally stable carrier, and a photopolymerisable relief-forming layer at least containing a crosslinkable elastomeric binder, an ethylenically unsaturated monomer, a migration-capable, surface-active additive, a photoinitiator activatable with UVA light and a photoinitiator activatable with UVC light. A method for producing a relief structure.

A patterning method includes forming a multilayer photoresist stack on a substrate. The multilayer photoresist stack includes a first layer of a wet photoresist, deposited by spin-on deposition, over a second layer of a dry photoresist, deposited by vapor deposition. The multilayer photoresist stack is exposed to a first pattern of actinic radiation including relative, spatially-varying doses of actinic radiation and including high-dose regions, mid-dose regions and low-dose regions. The multilayer photoresist stack and the first pattern of actinic radiation are configured such that after the exposing the multilayer photoresist stack to the first pattern of actinic radiation, in the high-dose regions, developability of both the first layer and the second layer is changed; in the mid-dose regions, developability of the first layer is changed while developability of the second layer is unchanged; in the low-dose regions, developability of both the first layer and the second layer is unchanged.

A microelectronic device is formed by dispensing discrete amounts of a mixture of photoresist resin and solvents from droplet-on-demand sites onto a wafer to form a first photoresist sublayer, while the wafer is at a first temperature which allows the photoresist resin to attain less than 10 percent thickness non-uniformity. The wafer moves under the droplet-on-demand sites in a first direction to form the first photoresist sublayer. A portion of the solvents in the first photoresist sublayer is removed. A second photoresist sublayer is formed on the first photoresist sublayer using the droplet-on-demand sites while the wafer is at a second temperature to attain less than 10 percent thickness non-uniformity in the combined first and second photoresist sublayers. The wafer moves under the droplet-on-demand sites in a second direction for the second photoresist sublayer, opposite from the first direction.

A method of manufacturing a semiconductor device includes forming a dopant layer including a dopant composition over a substrate. A resist layer including a resist composition is formed over the dopant layer. A dopant is diffused from the dopant composition in the dopant layer into the resist layer; and a pattern is formed in the resist layer.

A flexographic printing plate precursor is disclosed in which the size and the number of pinholes in a heat-sensitive mask layer are reduced in a simple manner, and to provide a flexographic printing plate almost free from disadvantages caused by the pinholes, based on the flexographic printing plate precursor. A flexographic printing plate precursor comprising at least a support (A), a photosensitive resin layer (B), a heat-sensitive mask layer (C) and a cover film (D) which are laminated in this order, characterized in that the surface energy and the surface roughness (Ra) of a surface of the cover film (D) which contacts with the heat-sensitive mask layer (C) are 25.0 to 40.0 mN/m and 0.01 to 0.2 μm, respectively, and that a protection layer (E) formed from a polymer compound dispersible in a developing solution is provided between the photosensitive resin layer (B) and the heat-sensitive mask layer (C).