Gray-tone lithography techniques for controlling the thickness profile of an overcoat layer on a surface-relief grating that has a non-uniform grating parameter (e.g., depth, duty cycle, or period), compensating for the non-uniform etch rate in a large area, defining etch/block regions, and/or controlling the thickness of the grating layer.

Gray-tone lithography techniques for controlling the thickness profile of an overcoat layer on a surface-relief grating that has a non-uniform grating parameter (e.g., depth, duty cycle, or period), compensating for the non-uniform etch rate in a large area, defining etch/block regions, and/or controlling the thickness of the grating layer.

The purpose of the present invention is to provide a planographic printing plate precursor which suppresses bleeding or transferring of a substance over time while maintaining edge stain preventing performance, a plate-making method of a planographic printing plate, and a printing method using the planographic printing plate. The planographic printing plate precursor includes a support; and an image recording layer formed on the support, in which layer arrangement described in any one of the following i to iv is provided, a hydrophilizatioin agent layer containing a hydrophilization agent is provided in a region in a specific position of the layer arrangement from the end portion of the planographic printing plate precursor to a portion inside the end portion by 1 cm, and the image recording layer includes an infrared absorbing agent and a specific radical polymerizable compound. i: a mode in which the support layer and the image recording layer are provided in this order. ii: a mode in which the support layer, an undercoat, and the image recording layer are provided in this order. iii: a mode in which the support layer, the image recording layer, and a protective layer are provided in this order. iv: a mode in which the support layer, the undercoat, the image recording layer, and the protective layer are provided in this order.

A pattern forming method includes: applying an actinic ray-sensitive or radiation- sensitive resin composition onto a substrate to form a resist film; forming an upper layer film on the resist film, using a composition for forming an upper layer film; exposing the resist film having the upper layer film formed thereon; and developing the exposed resist film using a developer including an organic solvent to form a pattern. The composition for forming an upper layer film contains a resin having a repeating unit (a) with a ClogP value of 2.85 or more and a compound (b) with a ClogP of 1.30 or less, and the receding contact angle of the upper layer film with water is 70 degrees or more, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method.

A pattern forming method includes: applying an actinic ray-sensitive or radiation- sensitive resin composition onto a substrate to form a resist film; forming an upper layer film on the resist film, using a composition for forming an upper layer film; exposing the resist film having the upper layer film formed thereon; and developing the exposed resist film using a developer including an organic solvent to form a pattern. The composition for forming an upper layer film contains a resin having a repeating unit (a) with a ClogP value of 2.85 or more and a compound (b) with a ClogP of 1.30 or less, and the receding contact angle of the upper layer film with water is 70 degrees or more, a resist pattern formed by the pattern forming method, and a method for manufacturing an electronic device, including the pattern forming method.

A resist underlayer film composition for use in a multilayer resist method, containing one or more compounds shown by formula (1), and an organic solvent,

WX).sub.n   (1)

W represents an n-valent organic group having 2 to 50 carbon atoms. X represents a monovalent organic group shown by formula (1X). “n” represents an integer of 1 to 10,

##STR00001##

The dotted line represents a bonding arm. R.sup.01 represents an acryloyl or methacryloyl group. Y represents a single bond or a carbonyl group. Z represents a monovalent organic group having 1 to 30 carbon atoms. A resist underlayer film composition can be cured by high energy beam irradiation and form a resist underlayer film having excellent filling and planarizing properties and appropriate etching resistance and optical characteristics in a fine patterning process by a multilayer resist method in the semiconductor apparatus manufacturing process.

The present invention pertains to a spin coating composition comprising a carbon material and a metal organic compound. The invention also pertains to a method of using the same to form a metal oxide film above a substrate and manufacturing a device.

The present invention pertains to a spin coating composition comprising a carbon material and a metal organic compound. The invention also pertains to a method of using the same to form a metal oxide film above a substrate and manufacturing a device.

A method of processing a substrate includes: providing structures on a surface of a substrate; depositing a self-assembled monolayer (SAM) over the structures and the substrate, the SAM being reactive to a predetermined wavelength of radiation; determining a first pattern of radiation exposure, the first pattern of radiation exposure having a spatially variable radiation intensity across the surface of the substrate and the structures; exposing the SAM to radiation according to the first pattern of radiation exposure, the SAM being configured to react with the radiation; developing the SAM with a predetermined removal fluid to remove portions of the SAM that are not protected from the predetermined fluid; and depositing a spacer material on the substrate and the structures, the spacer material being deposited at varying thicknesses based on an amount of the SAM remaining on the surface of the substrate and the structures.

A method of processing a substrate includes: providing structures on a surface of a substrate; depositing a self-assembled monolayer (SAM) over the structures and the substrate, the SAM being reactive to a predetermined wavelength of radiation; determining a first pattern of radiation exposure, the first pattern of radiation exposure having a spatially variable radiation intensity across the surface of the substrate and the structures; exposing the SAM to radiation according to the first pattern of radiation exposure, the SAM being configured to react with the radiation; developing the SAM with a predetermined removal fluid to remove portions of the SAM that are not protected from the predetermined fluid; and depositing a spacer material on the substrate and the structures, the spacer material being deposited at varying thicknesses based on an amount of the SAM remaining on the surface of the substrate and the structures.