A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of an iodized or brominated phenol, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.

A liquid photosensitive ink composition capable of forming a cured product with a high refractive index and applicable to an inkjet method even though the photosensitive ink composition does not include the solvent, or include small amount of the solvent, a cured product of the photosensitive ink composition, a display panel having a film consisting of the cured product, and a method for producing the cured product using the above photosensitive ink composition. In a photosensitive ink composition including a photopolymerizable compound, metal compound particles, and a photopolymerization initiator, a sulfide compound having specific structure and a (meth)acrylate compound having specific structure as the photopolymerizable compound, and at least one selected from the group consisting of titanium oxide particles, barium titanate particles, cerium oxide particles, and zinc sulfide particles, as the metal compound particles are used.

A positive resist composition is provided comprising (A) a specific sulfonium salt as quencher, (B) a sulfonium salt consisting of a fluorinated sulfonate anion and a sulfonium cation as acid generator, and (C) a base polymer comprising repeat units having an acid labile group. The resist composition has a high sensitivity and resolution, improved LWR or CDU, and a broad process window and forms a pattern of good profile after exposure.

Provided are patterned films comprising nanostructures and one or more UV-cured monomers. Also provide are methods of making the patterned films, and electroluminescent devices comprising the patterned films.

An extreme ultra-violet (EUV) lithography process includes lithographically patterning first through fourth photoresist regions on respective first through fourth regions of a semiconductor substrate, in sequence, using a mask. This mask includes a main area in which a main pattern is defined, a first dummy area in which a first dummy pattern is defined, a second dummy area in which a plurality of second sub-dummy patterns are defined at corresponding corners of the mask, and an alignment area including an alignment pattern therein that is spaced farther from a center of the main area relative to the first and second dummy areas. During the lithographically patterning, at least part of the alignment area on the first region of the substrate is exposed at least three times to EUV light, using the mask.

Provided are photoresist compositions for EUV and methods for manufacturing a semiconductor device using the same. The photoresist compositions for EUV include a photosensitive resin, a photoacid generator, and an additive, wherein the additive comprises a copolymer including a first repeating unit that includes a fluoroalkyl group or hydrocarbon group substituted with one or more fluoroalkyl group(s), and a second repeating unit that includes a sulfonic acid group and an amide group.

A transfer film includes a temporary support; and a photosensitive layer, in which the photosensitive layer includes a polymer A containing a constitutional unit represented by Formula A1, a constitutional unit derived from a monomer having an alicyclic structure, and a constitutional unit having a radically polymerizable group, a radically polymerizable compound, and a photopolymerization initiator, a content of the constitutional unit represented by Formula A1 is 10% by mass or more with respect to a total mass of the polymer A, a content of the constitutional unit derived from the monomer having the alicyclic structure is 15% by mass or more with respect to a total mass of the polymer A, and a glass transition temperature of a homopolymer of the monomer having the alicyclic structure is 120° C. or higher. ##STR00001##

A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more,
A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)  Formula(1) Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

A resist composition including a compound represented by formula (bd1), a total amount of the acid-generator component and the basic component being 20 to 70 parts by weight, relative to 100 parts by weight of the base material component. In the formula, Rx.sup.1 to Rx.sup.4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rx.sup.1 to Rx.sup.4 may be mutually bonded to form a ring structure; Ry.sup.1 and Ry.sup.2 represents a hydrogen atom or a hydrocarbon group, or Ry.sup.1 and Ry.sup.2 may be mutually bonded to form a ring structure; Rz.sup.1 to Rz.sup.4 represents a hydrogen atom or a hydrocarbon group, or two or more of Rz.sup.1 to Rz.sup.4 may be mutually bonded to form a ring structure; provided that at least one of Rx.sup.1 to Rx.sup.4, Ry.sup.1, Ry.sup.2 and Rz.sup.1 to Rz.sup.4 has an anionic group; and M.sup.m+ represents an m-valent organic cation). ##STR00001##

A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.