A light irradiating device includes a processing chamber in which a substrate is accommodated; a beam source chamber in which a beam source of an energy beam is accommodated; a partition wall configured to partition the processing chamber and the beam source chamber; multiple window members provided at the partition wall to transmit the energy beam outputted from the beam source toward the substrate within the processing chamber; and multiple gas discharge units respectively disposed around the multiple window members within the processing chamber, and configured to discharge an inert gas along surfaces of the multiple window members.

The disclosure provides in some embodiments a method for fabricating a photoresist pattern, a color filter and a method for fabricating the same, and a display device. The method for fabricating a photoresist pattern includes coating negative photoresist on a base substrate to form a first photoresist layer, coating positive photoresist on the first photoresist layer to form a second photoresist layer, conducting a first exposure process on first regions of the second photoresist layer, conducting a first developing process to remove the positive photoresist within the first regions of the second photoresist layer and the negative photoresist within second regions of the first photoresist layer, so as to obtain a first photoresist pattern and a second photoresist pattern, conducting a second exposure process on the first photoresist pattern and the second photoresist pattern, and conducting a second developing process to remove the first photoresist pattern.

A black resin film is produced by applying a photosensitive resin composition containing a black pigment, an alkali-soluble polymer compound, an ethylenic unsaturated bond-containing compound and α-aminoalkylphenone or α-hydroxyalkylphenone as a photopolymerization initiator, to a substrate; and subjecting the composition to exposure, development and post-exposure. The post-exposure is performed from both side with 1,300 mJ/cm.sup.2 or more in terms of i line.

A manufacturing method of a color filter substrate includes: depositing a photoresist layer on a substrate, patterning the photoresist layer through exposure and development and executing an UV curing; or forming an overcoat whose material is a light-cured material on a substrate, conducting an UV irradiation on the substrate from front and back sides of the substrate, respectively; or, depositing a black matrix photoresist, a red photoresist, a green photoresist and a blue photoresist on a substrate, respectively, and forming corresponding patterns respectively through exposure and development and executing an UV curing. By the technical solution, the line-width of a BM can be restrained from broadening, and the curing time can be shortened, thereby raising the production efficiency.

Systems and methods include improved techniques for patterning substrates, including improvements to double patterning techniques. Direct current superposition plasma processing is combined with photolithographic patterning techniques. An electron flux or ballistic electron beam from a plasma processing system can induce cross linking in a given photoresist, which alters the photoresist to be resistant to subsequent light exposure and/or developer treatments. Plasma processing is also used to add a protective layer of oxide on exposed surfaces of a first relief pattern, thereby protecting the photoresist from a developing acid. By protecting an initial photoresist relief pattern from developing acid, a second pattern can be applied on and/or between the first photoresist relief pattern thereby doubling an initial pattern or otherwise increasing pattern density. This combined pattern can then be used for subsequent microfabrication such as transferring the combined pattern into one or more underlying layers.

A substrate processing apparatus includes: a processing chamber configured to process a substrate; a light source chamber including a light source configured to irradiate vacuum ultraviolet light onto a surface of the substrate; a gas supply configured to supply an inert gas into the light source chamber; and a controller that controls the gas supply to maintain the light source chamber in an inert gas atmosphere.

There are provided a method of manufacturing a cured film, including a first exposure step of exposing a part of a photocurable film formed from a photocurable resin composition, a development step of developing the photocurable film after the exposure with a developing solution to obtain a pattern, and a second exposure step of exposing the pattern with light including light having a wavelength different from a wavelength of light used in the first exposure step, where the photocurable resin composition has a specific constitution, a photocurable resin composition that is used in the method of manufacturing the cured film, a method of manufacturing a laminate including the method of manufacturing a cured film, and a method of manufacturing an electronic device, which includes the method of manufacturing the cured film.

A method of manufacturing a semiconductor structure includes providing a mask including a first substrate; a first mask layer disposed over the first substrate, including a plurality of first recesses extended through the first mask layer; a second mask layer disposed over the first mask layer and including a plurality of second recesses extended through the second mask layer; providing a second substrate including a photoresist disposed over the second substrate; and projecting a predetermined electromagnetic radiation through the mask towards the photoresist, wherein the first mask layer is at least partially transparent to the predetermined electromagnetic radiation, the second mask layer is opaque to the predetermined electromagnetic radiation, and at least a portion of the second mask layer is disposed between two of the plurality of second recesses.

The present invention is a composition for forming a silicon-containing metal hard mask, including: (A) a metal oxide nanoparticle; (B) a thermally crosslinkable polysiloxane (Sx) having no aromatic-ring-containing organic group; and (C) a solvent. This provides a composition for forming a silicon-containing metal hard mask that has a high effect of inhibiting collapse of an ultrafine pattern in a multilayer resist method, that can form a resist pattern having excellent LWR, that has more excellent dry etching resistance and wet removability than a conventional silicon-containing underlayer film material, and that has more excellent filling ability than a conventional metal hard mask material.

A method of manufacturing a semiconductor structure includes providing a mask including a first substrate; a first mask layer disposed over the first substrate, including a plurality of first recesses extended through the first mask layer; a second mask layer disposed over the first mask layer and including a plurality of second recesses extended through the second mask layer; providing a second substrate including a photoresist disposed over the second substrate; and projecting a predetermined electromagnetic radiation through the mask towards the photoresist, wherein the first mask layer is at least partially transparent to the predetermined electromagnetic radiation, the second mask layer is opaque to the predetermined electromagnetic radiation, and at least a portion of the second mask layer is disposed between two of the plurality of second recesses.