A method for producing a structure composed of crosslinked polymer, including laminating a photo-dissoluble polymer layer on a substrate; laminating a layer containing a crosslinkable polymer on the photo-dissoluble polymer layer; irradiating the layer containing the crosslinkable polymer with light in a patternwise manner under crosslinking conditions to crosslink the crosslinkable polymer in a patternwise manner to obtain a crosslinked polymer sheet; washing and removing a uncrosslinked crosslinkable polymer to obtain a patterned crosslinked polymer sheet; and irradiating the photo-dissoluble polymer layer with light in a patternwise manner under dissolution conditions to dissolve the photo-dissoluble polymer layer in a patternwise manner, and peeling the crosslinked polymer sheet in a patternwise manner from the substrate.

A method for producing a three-dimensional structure (10) in a lithographic material (24) that can be polymerized and thus solidified using energy input methods, wherein initially a shell wall (16) of the three-dimensional structure (10) to be produced is polymerized so as to form a polymerized shell wall (16) such that a volume (28) of unpolymerized lithographic material is enclosed using a first, spatially resolving energy input method, wherein the lithographic material (24) surrounding the polymerized shell wall (16) is removed in an intermediate development step, wherein subsequently the volume (28) enclosed by the shell wall (16) is polymerized using a second energy input method.

It is an object of the present invention to provide a thermosetting resin composition which allows stress relaxation in an ester exchange reaction and the long-term use of the thermosetting resin composition having such a structure. A thermosetting resin composition of the present invention contains: an ester bond; and a functional group protected by a protecting group. The functional group is deprotected by external stimulus. The functional group and the ester bond can be subjected to an ester exchange reaction.

Provided are a photomask and a method of manufacturing a color filter substrate. This belongs to the field of display technologies, and can be used to simplify manufacturing process of the color filter substrate and improve manufacturing efficiency of the color filter substrate.

Apparatus and method for exposing a partially processed photopolymer printing plate to post-exposure radiation and finishing radiation, the printing plate defining a whole area having a first full lateral dimension and a second full lateral dimension perpendicular to the first lateral dimension. A plurality of light-emitting diodes (LEDs) are arranged in one or more arrays; a surface for receiving the printing plate in a location disposed to receive the post exposure radiation and the finishing radiation; and one of more controllers connected to the one or more arrays to activate the one or more arrays to cause the plurality of sets of LEDs to emit radiation toward the printing plate. The plurality of LEDs includes at least a first set of LEDs to emit the post exposure radiation in a UVA spectral range and a second set of LEDs to emit the finishing radiation in a UVC spectral range.

A composition crosslinkable by broad band UV radiation, which after cross-linking is capable of cold ablation by a UV Excimer Laser emitting between 222 nm and 308 nm, where the composition is comprised of a negative tone resist developable in aqueous base comprising and is also comprised of a conjugated aryl additive absorbing ultraviolet radiation strongly in a range between from about 220 nm to about 310 nm.

The present invention also encompasses a process comprising steps a), b) and c) a) coating the composition of claim 1 on a substrate; b) cross-linking the entire coating by irradiation with broadband UV exposure; c) forming a pattern in the cross-linked coating by cold laser ablating with a UV excimer laser emitting between 222 nm and 308 nm. Finally the present invention also encompasses

The present invention also encompasses a process comprising steps a), b) c) and d) a)coating the composition of claim 1 on a substrate; b)cross-linking part of the coating by irradiation with broadband UV exposure through a mask; c)developing the coating with aqueous base removing the unexposed areas of the film, thereby forming a first pattern; d)forming a second pattern in the first pattern by laser cold laser ablating of the first pattern with a UV excimer laser emitting between 222 nm and 308 nm.

The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located on the substrate. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

A composition crosslinkable by broad band UV radiation, which after cross-linking is capable of cold ablation by a UV Excimer Laser emitting between 222 nm and 308 nm, where the composition is comprised of a negative tone resist developable in aqueous base comprising and is also comprised of a conjugated aryl additive absorbing ultraviolet radiation strongly in a range between from about 220 nm to about 310 nm.

The present invention also encompasses a process comprising steps a), b) and c) a) coating the composition of claim 1 on a substrate; b) cross-linking the entire coating by irradiation with broadband UV exposure; c) forming a pattern in the cross-linked coating by cold laser ablating with a UV excimer laser emitting between 222 nm and 308 nm. Finally the present invention also encompasses

The present invention also encompasses a process comprising steps a), b) c) and d) a) coating the composition of claim 1 on a substrate; b) cross-linking part of the coating by irradiation with broadband UV exposure through a mask; c) developing the coating with aqueous base removing the unexposed areas of the film, thereby forming a first pattern; d) forming a second pattern in the first pattern by laser cold laser ablating of the first pattern with a UV excimer laser emitting between 222 nm and 308 nm.

A manufacturing a semiconductor device of the present disclosure includes coating a photosensitive material on a workpiece; exposing the photosensitive material using a first exposure mask; performing a positive-tone development on the photosensitive material using a first developer after the first exposing; exposing the photosensitive material using a second exposure mask after the first developing; and performing a negative-tone development on the photosensitive material using a second developer after the second exposing.

Embodiments of performing a photolithography process are provided. The method for performing the photolithography process includes providing a substrate and forming a photoresist layer over the substrate. The method further includes forming exposed photoresist portions by performing an exposure process on the photoresist layer. The method further includes performing a surface modifying treatment on the photoresist layer after the exposure process and removing the exposed photoresist portions by performing a developing process.