A process for the production of three-dimensional structures involves generating stepped structures in the micrometer to millimeter range. A novel possibility for realizing microstructures for micromechanical and high-performance electronic structures allows a substantially free shaping of and high-throughput production of stepped structures is met according to the invention by coating a copper-clad substrate at least once with a first photoresist for generating a defined height of at least one structure step and coating the first photoresist at least once with a second photoresist for generating a defined height of at least one further structure step, wherein the first photoresist and the second photoresist have different photosensitivities and transmission characteristics which generate structure-forming regions at least of the first photoresist and second photoresist by exposing with different wavelengths and radiation doses and after developing. The structure-forming regions at least partially overlap one another and form a stepped three-dimensional structure.

Substrate processing techniques to alleviate missing contact holes, scummed contact holes and scummed caused bridging are disclosed. In one embodiment, electromagnetic radiation (EMR) absorbing molecules are utilized in a process that uses an initial patterned exposure followed by a flood exposure. In one embodiment, a Photo-Sensitized Chemically-Amplified Resist (PSCAR) resist process is utilized to form contact holes in which an initial exposure and develop process is performed followed by a flood exposure and a second develop process. In another embodiment, a process is utilized in which precursors of EMR absorbing molecules are incorporated into a layer underlying the resist layer. Thus, enhanced formation of EMR absorbing molecules will result at the interface of the resist layer and the underlying layer.

A particle beam apparatus includes an object table configured to hold a semiconductor substrate; a particle beam source configured to generate a particle beam; a detector configured to detect a response of the substrate caused by interaction of the particle beam with the substrate and to output a detector signal representative of the response; and a processing unit configured to: receive or determine a location of one or more defect target areas on the substrate; control the particle beam source to inspect the one or more defect target areas; identify one or more defects within the one or more defect target areas, based on the detector signal obtained during the inspection of the one or more defect target areas; control the particle beam source to repair the one or more defects.

Methods include inputting an array of pixels, where each pixel in the array of pixels has a pixel dose. The array of pixels represents dosage on a surface to be exposed with a plurality of patterns, each pattern of the plurality of patterns having an edge. A target bias is input. An edge of a pattern in the plurality of patterns is identified. For each pixel which is in a neighborhood of the identified edge, a calculated pixel dose is calculated such that the identified edge is relocated by the target bias. The array of pixels with the calculated pixel doses is output. Systems for performing the methods are also disclosed.

An object of the present invention is to provide a film forming material for lithography that is applicable to a wet process, and is useful for forming a photoresist underlayer film excellent in heat resistance, etching resistance, embedding properties to a supporting material having difference in level, and film flatness; and the like. A film forming material for lithography comprising a compound having a group of the following formula (0):

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can solve the problem described above.

A method of manufacturing a semiconductor structure includes providing a substrate and a photoresist over the substrate; placing a mask over the photoresist; exposing the photoresist to a predetermined electromagnetic radiation through the mask; and removing at least a portion of the photoresist exposed to the predetermined electromagnetic radiation. The mask includes a first portion configured to totally allow the predetermined electromagnetic radiation passing through, a second portion configured to partially allow the predetermined electromagnetic radiation passing through, and a third portion configured to block the predetermined electromagnetic radiation, the second portion is disposed between the first portion and the third portion.

Embodiments reduce or eliminate microbridge defects in extreme ultraviolet (EUV) patterning for microelectronic workpieces. A patterned layer is formed over a multilayer structure using an EUV patterning process. Protective material is then deposited over the patterned layer using one or more oblique deposition processes. One or more material bridges extending between line patterns within the patterned layer are then removed while using the protective material to protect the line patterns. As such, microbridge defects caused in prior solutions are reduced or eliminated. For one embodiment, the oblique deposition processes include physical vapor deposition (PVD) processes that apply the same or different protective materials in multiple directions with respect to line patterns within the patterned layer. For one embodiment, the removing includes one or more plasma trim processes. Variations can be implemented.

A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.

Substrate processing techniques to alleviate missing contact holes, scummed contact holes and scummed caused bridging are disclosed. In one embodiment, electromagnetic radiation (EMR) absorbing molecules are utilized in a process that uses an initial patterned exposure followed by a flood exposure. In one embodiment, a Photo-Sensitized Chemically-Amplified Resist (PSCAR) resist process is utilized to form contact holes in which an initial exposure and develop process is performed followed by a flood exposure and a second develop process. In another embodiment, a process is utilized in which precursors of EMR absorbing molecules are incorporated into a layer underlying the resist layer. Thus, enhanced formation of EMR absorbing molecules will result at the interface of the resist layer and the underlying layer.

An exposure apparatus includes a projection optical system configured to project a pattern of a mask onto a substrate, a substrate stage configured to hold and move the substrate, and a controller configured to control exposure of the substrate held by the substrate stage, wherein the controller obtains an amount of deviation of an image of the pattern projected onto the substrate with respect to the pattern of the mask based on telecentricity information, which is information on telecentricity for respective image heights of the projection optical system, and height information, which is information on the height of a surface of the substrate, and corrects deviation of the image based on the obtained amount of deviation to expose the substrate.