A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.

The present invention relates to a method for etching lithium niobate, the method including a process of etching lithium niobate using a mask pattern as a physical dry etching method using Ar plasma produced in a chamber through Ar gas, wherein in the process of etching lithium niobate, a process pressure of the chamber is maintained at 1 mTorr to 20 mTorr, and a method for forming a lithium niobate pattern using the same.

A method includes: depositing a mask layer over a substrate; directing first radiation reflected from a central collector section of a sectional collector of a lithography system toward the mask layer according to a pattern; directing second radiation reflected from a peripheral collector section of the sectional collector toward the mask layer according to the pattern, wherein the peripheral collector section is vertically separated from the central collector section by a gap; forming openings in the mask layer by removing first regions of the mask layer exposed to the first radiation and second regions of the mask layer exposed to the second radiation; and removing material of a layer underlying the mask layer exposed by the openings.

Provided is a mask data preparation method, including generating shot-level pattern data including a first layout and a second layout, in which the first layout and the second layout are located across a boundary line between a first shot-data region and a second shot-data region adjacent to the first shot-data region, generating a first correction layout and a first plurality of auxiliary patterns associated with the first layout based on the shot-level pattern data, generating a second correction layout and a second plurality of auxiliary patterns associated with the second layout based on the shot-level pattern data, generating corrected shot-level pattern data based on the first correction layout, the first plurality of auxiliary patterns, the second correction layout, and the second plurality of auxiliary patterns, extracting a first mask data based on the corrected shot-level pattern data, and extracting based on the corrected shot-level pattern data a second mask data.

A method for removing a metal film layer from a surface of a substrate based on polymer material, comprising: S1, preparing a super-resolution photolithographic structure, wherein the super-resolution photolithographic structure sequentially comprises a substrate, a reflective metal film layer, a photosensitive film layer and a transmissive metal film layer from bottom to top to form a metal-dielectric-metal plasma cavity imaging structure; S2, exposing the photosensitive film layer in the plasma cavity imaging structure by utilizing a super-resolution photolithography; S3, coating a high-molecular polymer solution onto the transmissive metal film layer, and heating to cure the high-molecular polymer solution to form a polymer film; and S4, stripping the polymer film, while simultaneously the transmissive metal film layer which is adhered to the polymer film is completely stripped without damaging the photosensitive film layer and the reflective metal film layer.