A transfer-printable (e.g., micro-transfer-printable) device source wafer comprises a growth substrate comprising a growth material, a plurality of device structures comprising one or more device materials different from the growth material, the device structures disposed on and laterally spaced apart over the growth substrate, each device structure comprising a device, and a patterned dissociation interface disposed between each device structure of the plurality of device structures and the growth substrate. The growth material is more transparent to a desired frequency of electromagnetic radiation than at least one of the one or more device materials. The patterned dissociation interface has one or more areas of relatively greater adhesion each defining an anchor between the growth substrate and a device structure of the plurality of device structures and one or more dissociated areas of relatively lesser adhesion between the growth substrate and the device structure of the plurality of device structures.

Described are methods for enabling the creation of multiple similar designs by utilizing sets of multiple, disjoint fabrication masks. A first set of device features may be formed from a material layer in a first portion of a die area of a semiconductor substrate based on a first photolithographic exposure. A second set of device features may be formed from the material layer in a second portion of the die area of the semiconductor substrate based on a second photolithographic exposure after the first photolithographic exposure. The first portion of the die area and the second portion of the die area may be non-overlapping.

Multiple patterning approaches using radiation sensitive organometallic materials is described. In particular, multiple patterning approaches can be used to provide distinct multiple patterns of organometallic material on a hardmask or other substrate through a sequential approach that leads to a final pattern. The multiple patterning approach may proceed via sequential lithography steps with multiple organometallic layers and may involve a hardbake freezing after development of each pattern. Use of an organometallic resist with dual tone properties to perform pattern cutting and multiple patterning of a single organometallic layer are described. Corresponding structures are also described.

A semiconductor device includes at least one mandrel including a dielectric material, and at least one non-mandrel including a hard mask material having an etch property substantially similar to that of the dielectric material.

A method of forming patterned features on a substrate is provided. The method includes: positioning a first mask over a first portion of a substrate; directing radiation through the patterned area of the first mask at the first portion of the substrate to form a first patterned region on the substrate; positioning a second mask over a second portion of the substrate, the second mask including a first patterned area and a second patterned area, the first patterned area spaced apart from the second patterned area by an unpatterned area; directing radiation through the first patterned area of the second mask at a first part of the second portion of the substrate to form a second patterned region on the substrate; and directing radiation through the second patterned area of the second mask at a second part of the second portion of the substrate to form a third patterned region.

A process for the production of three-dimensional structures involves generating stepped structures in the micrometer to millimeter range. A novel possibility for realizing microstructures for micromechanical and high-performance electronic structures allows a substantially free shaping of and high-throughput production of stepped structures is met according to the invention by coating a copper-clad substrate at least once with a first photoresist for generating a defined height of at least one structure step and coating the first photoresist at least once with a second photoresist for generating a defined height of at least one further structure step, wherein the first photoresist and the second photoresist have different photosensitivities and transmission characteristics which generate structure-forming regions at least of the first photoresist and second photoresist by exposing with different wavelengths and radiation doses and after developing. The structure-forming regions at least partially overlap one another and form a stepped three-dimensional structure.

A method of preparing a film negative including the steps of dispersing a UV ink in a desired pattern on a UV printing substrate; and curing the UV ink with a source of actinic radiation to crosslink and cure the UV ink and create the UV printed polymer layer in the desired pattern. The UV ink is at least substantially solvent-free and printing substrate does not contain an adhesive layer or an ink-receptive layer and is not been modified to be ink-receptive. The film negative may be used in a process of making a flexographic printing element.

Substrate processing techniques to alleviate missing contact holes, scummed contact holes and scummed caused bridging are disclosed. In one embodiment, electromagnetic radiation (EMR) absorbing molecules are utilized in a process that uses an initial patterned exposure followed by a flood exposure. In one embodiment, a Photo-Sensitized Chemically-Amplified Resist (PSCAR) resist process is utilized to form contact holes in which an initial exposure and develop process is performed followed by a flood exposure and a second develop process. In another embodiment, a process is utilized in which precursors of EMR absorbing molecules are incorporated into a layer underlying the resist layer. Thus, enhanced formation of EMR absorbing molecules will result at the interface of the resist layer and the underlying layer.

An object of the present invention is to provide a laminate for forming an image with high sensitivity of the heat-sensitive image forming layer and excellent manufacturing suitability, and a manufacturing method of a flexographic printing plate using the same. The laminate for forming an image is a laminate for forming an image, which is for forming a mask used for manufacturing a flexographic printing plate, including, in the following order, a carrier sheet, a barrier layer, and a heat-sensitive image forming layer, in which the barrier layer contains a first infrared absorbing dye, the heat-sensitive image forming layer contains an ultraviolet absorber and a second infrared absorbing dye, both of the first infrared absorbing dye and the second infrared absorbing dye are a compound having an absorption at a wavelength of 1070 nm and having a mass absorption coefficient at the wavelength of 1070 nm of 50 L/(g.Math.cm) or more, and both of the barrier layer and the heat-sensitive image forming layer contain a third infrared absorbing dye having an absorption at a wavelength of 830 nm.

A method and apparatus for forming a resist pattern may be provided. In the method for forming a resist pattern, a resist layer may be formed on a base layer, an electric field may be applied to the resist layer in a thickness direction of the resist layer, and a portion of the resist layer may be exposed with extreme ultraviolet (EUV) light while applying the electric field. A lithography apparatus for performing the method of forming a resist pattern may include at least an exposure part and an electric field forming part. The exposure part may be configured to expose a portion of the resist layer with extreme ultraviolet (EUV) light. The electric field forming part may be configured to apply an electric field to the resist layer.