A photoresist composition, including a polymer having a C.sub.6-30 hydroxyaromatic group, a solvent, and a sulfonium salt having Formula (I):

##STR00001## wherein, in Formula (I), R, R.sup.1 to R.sup.8, X, n, and R.sub.f are the same as described in the specification.

An efficient source of EUV or SXR flux uses multiple e-beams from multiple cathodes to impact a wide anode target with a flux-generating surface to generate flux over a wide area. The conversion efficiency of e-beam power to flux power may be improved by the direction of the e-beams towards the anode target at shallow or grazing incidence angles or the use of mirrored anode surfaces which reflect EUV or SXR. The source is enclosed in a vacuum chamber and performs work such as the penetration of photoresist on a semiconductor wafer in vacuum.

An optical system (OS) for focusing a beam of radiation (B) on a region of interest in a metrology apparatus is described. The beam of radiation (B) comprises radiation in a soft X-ray or Extreme Ultraviolet spectral range. The optical system (OS) comprises a first stage (S1) for focusing the beam of radiation at an intermediate focus region. The optical system (OS) comprises a second stage (S2) for focusing the beam of radiation from the intermediate focus region onto the region of interest. The first and second stages each comprise a Kirkpatrick-Baez reflector combination. At least one reflector comprises an aberration-correcting reflector.

Techniques related to multi-pass patterning lithography, device structures, and devices formed using such techniques are discussed. Such techniques include exposing a resist layer disposed over a grating pattern with non-reflecting radiation to generate an enhanced exposure portion within a trench of the grating pattern and developing the resist layer to form a pattern layer having a pattern structure within the trench of the grating pattern.

Techniques disclosed herein provide a method for continued patterning of substrates having sub-resolution features. Techniques include using novel deposition and removal techniques. This results in a substrate with inter-digitated photoresist in which photoresist is positioned between structures on a given substrate. Combined with using extreme ultraviolet lithographic exposure, patterning techniques herein can make desired cuts and blocks at specified locations on the substrate.

Methods and apparatus for determining an intensity profile of a radiation beam. The method comprises providing a diffraction structure, causing relative movement of the diffraction structure relative to the radiation beam from a first position wherein the radiation beam does not irradiate the diffraction structure to a second position wherein the radiation beam irradiates the diffraction structure, measuring, with a radiation detector, diffracted radiation signals produced from diffraction of the radiation beam by the diffraction structure as the diffraction structure transitions from the first position to the second position or vice versa, and determining the intensity profile of the radiation beam based on the measured diffracted radiation signals.

Disclosed is an apparatus for lithography patterning. The apparatus includes a substrate stage configured to hold a substrate coated with a deposition enhancement layer (DEL), a radiation source for generating a patterned radiation towards a surface of the DEL, and a supply pipe for flowing an organic gas near the surface of the DEL, wherein elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL.

The sulfonium salt has high photosensitivity to i-rays and high compatibility with cationically polymerizable compounds such as epoxy compounds, and is excellent storage stability in formulations containing such compounds. The sulfonium salt is represented by general formula (1). In formula (1), R represents an alkyl group or an aryl group; substituents, R1 to R5, each independently represent an alkyl group, a hydroxy group, an alkoxy group, an aryl group, an aryloxy group, a hydroxy(poly)alkyleneoxy group, or a halogen atom; R6 to R9 each independently represent an alkyl group, an aryl group, or a hydrogen atom; m.sup.1 to m.sup.5 each represent the number of occurrences of each of R1 to R5, m.sup.1 and m.sup.4 represent an integer of 0 to 3, m.sup.2 and m.sup.5 represent an integer of 0 to 4, m.sup.3 represents an integer of 0 to 5, and X.sup. represents a monovalent polyatomic anion. ##STR00001##

This conductive composition includes: a conductive polymer (a) having a sulfonic acid group and/or a carboxy group; a basic compound (b) having at least one nitrogen-containing heterocyclic ring and an amino group; an aqueous polymer (c) having a hydroxyl group (excluding the conductive polymer (a)); a hydrophilic organic solvent (d); and water (e).

The present invention provides a photo-substrate for printing of lenticular images that comprises a lenticular lens array, and an energy-reactive material adhered to the backside of the lenticular lens array. According to the methods of the present invention, the lenticular image is printed directly through the lenticular lens array onto the energy-reactive material, using, for example, collimated light or laser. The photo-substrate of the present invention can be adapted for large scale or industrial production to print lenticular images on a wide array of substrates, including such things as packaging and clothing.