Patent classifications
G03F7/2039
RADIATION-SENSITIVE RESIN COMPOSITION, CURED FILM, PATTERN FORMING METHOD, SOLID-STATE IMAGING DEVICE, AND IMAGE DISPLAY DEVICE
Provided are a radiation-sensitive resin composition having good sensitivity and excellent temporal stability of the sensitivity, a cured film, a pattern forming method, a solid-state imaging device, and an image display device. The radiation-sensitive resin composition includes a resin, a polymerizable compound having an ethylenically unsaturated bond, a photopolymerization initiator, an organic solvent, and water, in which the photopolymerization initiator includes an oxime ester compound having at least one group selected from a branched alkyl group and a cyclic alkyl group, and the content of water is 0.1% to 2% by mass with respect to the mass of the radiation-sensitive resin composition.
Quantum-limited extreme ultraviolet coherent diffraction imaging
Apparatus and methods for coherent diffraction imaging. This is accomplished by acquiring data in a CDI setup with a CMOS or similar detector. The object is illuminated with coherent light such as EUV light which may be pulsed. This generates diffraction patterns which are collected by the detector, either in frames or continuously (by recording the scan position during collection). Pixels in the CDI data are thresholded and set to zero photons if the pixel is below the threshold level. Pixels above the threshold may be set to a value indicating one photon, or multiple thresholds may be used to set pixels values to one photon, two photons, etc. In addition, multiple threshold values may be used to detect different photon energies for illumination at multiple wavelengths.
Reflection mask and pattern formation method
According to one embodiment, there is provided a reflection mask including a multilayer reflection film configured to reflect EUV light or soft X-rays. The reflection mask includes a periodic pattern arrangement region in which first patterns are periodically arranged, and a non-periodic pattern arrangement region in which second patterns are non-periodically arranged. The non-periodic pattern arrangement region and the periodic pattern arrangement region differ from one another in reflectivity for the EUV light or the soft X-rays.
Lithography patterning with a gas phase resist
Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.
Positive resist composition and pattern forming process
A non-chemically-amplified positive resist composition comprising a polymer comprising both recurring units derived from a sulfonium salt capable of generating a fluorinated acid and recurring units containing an amino group as a base resin exhibits a high resolution and a low edge roughness and forms a pattern of good profile after exposure and organic solvent development.
Method for manufacturing patterned object, patterned object, and light irradiation apparatus
Disclosed herein is a method for manufacturing a patterned object and a light irradiation apparatus that make it possible to form a pattern that accurately follows a mask pattern with higher accuracy in a patterning process of irradiating a pattern forming substrate with vacuum ultra violet light. The light irradiation apparatus includes a mask stage arranged apart from the pattern forming substrate and configured to hold a mask on which a prescribed pattern is formed, and a vacuum ultra violet light source unit configured to irradiate the pattern forming substrate with vacuum ultra violet light through the mask. A space between the mask and the pattern forming substrate is set to be an atmosphere containing oxygen. The vacuum ultra violet light source unit irradiates light, as the vacuum ultra violet light, having a continuous spectrum in a range where a wavelength ranges from 180 nm to 200 nm.
CURABLE COMPOSITION, METHOD OF MANUFACTURING CURABLE COMPOSITION, FILM, INFRARED CUT FILTER, INFRARED TRANSMITTING FILTER, PATTERN FORMING METHOD, AND DEVICE
A curable composition includes: an -type oxytitanium phthalocyanine pigment; and a curable compound. A method of manufacturing a curable composition includes a step of dispersing an -type oxytitanium phthalocyanine pigment and a pigment other than an oxytitanium phthalocyanine pigment in the presence of a solvent. A film, an infrared cut filter, and an infrared transmitting filter are formed using the curable composition. A pattern forming method includes: a step of forming a curable composition layer on a support using the curable composition; and a step of forming a pattern on the curable composition layer using a photolithography method or a dry etching method. The device is a solid image pickup element, an infrared sensor, or an image display device including the film.
RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND POLYPHENOL COMPOUND USED THEREIN
The present invention is a compound represented by the following general formula (1).
##STR00001##
Multi-Cathode EUV and Soft X-ray Source
An efficient source of EUV or SXR flux uses multiple e-beams from multiple cathodes to impact a wide anode target with a flux-generating surface to generate flux over a wide area. The conversion efficiency of e-beam power to flux power may be improved by the direction of the e-beams towards the anode target at shallow or grazing incidence angles or the use of mirrored anode surfaces which reflect EUV or SXR. The source is enclosed in a vacuum chamber and performs work such as the penetration of photoresist on a semiconductor wafer in vacuum.
RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME
The present invention provides a resist composition containing a base resin composed of a polymer compound that contains a repeating unit a shown by formula (1) and a repeating unit b having either or both of a carboxyl group in which a hydrogen atom is substituted with an acid-labile group and a phenolic hydroxyl group in which a hydrogen atom is substituted with an acid-labile group, with a weight average molecular weight of 1,000 to 500,000. There can be provided a resist composition that has high sensitivity and high resolution, and can give a pattern with low dimensional variation and good pattern profile after exposure.
##STR00001##
wherein R.sup.1 represents a hydrogen atom or a methyl group; Z represents a hydroxybenzoquinone group, or a hydroxynaphthoquinone group optionally containing a substituent; and a fraction a of the repeating unit a satisfies 0<a<1.0, and a fraction b of the repeating unit b satisfies 0<b<1.0.