G03F7/2039

ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN-FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE
20240419072 · 2024-12-19 · ·

A first object of the present invention is to provide an active light ray sensitive or radioactive ray sensitive resin composition having excellent sensitivity and forming a pattern with excellent resolution. A second object of the present invention is to provide a resist film, a pattern-forming method, and a method for manufacturing an electronic device relating to the active light ray sensitive or radioactive ray sensitive resin composition. The active light ray sensitive or radioactive ray sensitive resin composition of the present invention includes a metal compound, a resin having a main chain that is decomposed by irradiation with an X-ray, an electron beam, or an extreme ultraviolet ray, and a solvent, wherein the metal compound includes one or more metal compounds selected from the group consisting of a metal complex, an organic metal salt, and an organic metal compound, and the resin includes a resin including a repeating unit represented by a formula (1) or a repeating unit represented by a formula (XR0).

POLYMER, RESIST COMPOSITION INCLUDING THE SAME, AND METHOD OF FORMING PATTERN BY USING THE RESIST COMPOSITION

Provided are a polymer including a first repeating unit represented by Formula 1, a resist composition including the polymer, and a method of forming a pattern using the resist composition:

##STR00001## wherein descriptions of L.sub.11 to L.sub.14, a11 to a13, A.sub.11, X.sub.11, R.sub.11, R.sub.12, b12 and p in Formula 1 are provided in the present specification.

CONTROLLING DIMENSIONS OF NANOWIRES

Controlling dimensions of nanowires includes lithographically forming a trench in a layer of a polymer resin with a width less than one micrometer where the polymer resin has a thickness less than one micrometer and is deposited over an electrically conductive substrate, depositing a nanowire material within the trench to form a nanowire, and obtaining the nanowire from the trench with a removal mechanism.

Controlling dimensions of nanowires

Controlling dimensions of nanowires includes lithographically forming a trench in a layer of a polymer resin with a width less than one micrometer where the polymer resin has a thickness less than one micrometer and is deposited over an electrically conductive substrate, depositing a nanowire material within the trench to form a nanowire, and obtaining the nanowire from the trench with a removal mechanism.

Actinic ray-sensitive or radiation-sensitive resin composition, resist film, resist-coated mask blank, photomask and pattern forming method, and method for producing electronic device using them, and electronic device

There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing: a resin (A) containing a repeating unit represented by a specific formula (1), and an ionic compound (B) represented by a specific formula (2), a resist film formed by using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method including: (a) a step of forming the resist film, (b) a step of exposing the film, and (c) a step of developing the exposed film using a developer to form a pattern.

Chemical amplification resist composition, resist film using the composition, resist-coated mask blanks, resist pattern forming method, photomask and polymer compound

A chemical amplification resist composition contains: (A) a polymer compound having a structure where a hydrogen atom of a phenolic hydroxyl group is replaced by a group having a non-acid-decomposable polycyclic alicyclic hydrocarbon structure; and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation.

Reagent and composition of resist
09618844 · 2017-04-11 · ·

Described is a reagent that enhances acid generation of a photoacid generator and a composition containing such reagent.

Method for Patterning a Substrate Using Extreme Ultraviolet Lithography
20170090290 · 2017-03-30 ·

Techniques disclosed herein provide a method for continued patterning of substrates having sub-resolution features. Techniques include using novel deposition and removal techniques. This results in a substrate with inter-digitated photoresist in which photoresist is positioned between structures on a given substrate. Combined with using extreme ultraviolet lithographic exposure, patterning techniques herein can make desired cuts and blocks at specified locations on the substrate.

Systems and methods for synchronous operation of debris-mitigation devices

Systems and methods for synchronous operation of debris-mitigation devices (DMDs) in an EUV radiation source that emits EUV radiation and debris particles are disclosed. The methods include establishing a select relative angular orientation between the first and second DMDs that provides a maximum amount of transmission of EUV radiation between respective first and second rotatable vanes of the first and second DMDs. The methods also include rotating the first and second sets of vanes to capture at least some of the debris particles while substantially maintaining the select relative angular orientation. The systems employ DMD drive units, and an optical-based encoder disc in one of the DMD drive units measures and controls the rotational speed of the rotatable DMD vanes. Systems and methods for optimally aligning the DMDs are also disclosed.

METHOD FOR MANUFACTURING PATTERNED OBJECT, PATTERNED OBJECT, AND LIGHT IRRADIATION APPARATUS
20170052447 · 2017-02-23 · ·

Disclosed herein is a method for manufacturing a patterned object and a light irradiation apparatus that make it possible to form a pattern that accurately follows a mask pattern with higher accuracy in a patterning process of irradiating a pattern forming substrate with vacuum ultra violet light. The light irradiation apparatus includes a mask stage arranged apart from the pattern forming substrate and configured to hold a mask on which a prescribed pattern is formed, and a vacuum ultra violet light source unit configured to irradiate the pattern forming substrate with vacuum ultra violet light through the mask. A space between the mask and the pattern forming substrate is set to be an atmosphere containing oxygen. The vacuum ultra violet light source unit irradiates light, as the vacuum ultra violet light, having a continuous spectrum in a range where a wavelength ranges from 180 nm to 200 nm.