A method for forming a device structure is disclosed. The method of forming the device structure includes forming a variable-depth structure in a device material layer using cyclic-etch process techniques. A plurality of device structures is formed in the variable-depth structure to define vertical or slanted device structures therein. The variable-depth structure and the vertical or slanted device structures are formed using an etch process.

A set of tracking devices can be placed within a geographic area as part of a scavenger hunt. A user with a mobile device can traverse the area, and when the user moves within a threshold proximity or communicative range of a tracking device, the mobile device can receive a communication from the tracking device identifying the tracking device. In response to determining that the tracking device is part of the set of tracking devices and thus part of the scavenger hunt, the mobile device can modify a tracking device interface displaying a representation of the tracking device to indicate that the tracking device has been found. In response to each tracking device being found, the mobile device can modify the tracking device interface to indicate that the scavenger hunt has been completed.

An extreme ultraviolet light generation apparatus includes a chamber (10) having an internal space in which extreme ultraviolet light is generated when a target substance supplied to the internal space is irradiated with a laser beam (301), a gas supply unit (63) configured to supply etching gas to the internal space, a discharge unit (61) configured to discharge residual gas from the internal space, a pressure sensor (26) configured to measure a pressure in the internal space, and a control unit (20), and the control unit (20) may predict a time until the pressure in the internal space reaches a predetermined pressure by using a relation between an elapsed time since start of a predetermined duration including a duration in which the extreme ultraviolet light is generated and a pressure measured in the predetermined duration.

A cover glass and a manufacturing method thereof are provided, the method includes: coating a first organic layer on a transparent substrate; forming first via holes on the first organic layer at intervals, heating and melting the first organic layer to flow; wet-etching the transparent substrate having the first organic layer to form a first microstructure on a region of the transparent substrate not shielded by the first organic layer; and removing the first organic layer form the transparent substrate. The present disclosure breaks the limitation for preparing microstructures with size below 5 m in the existing photolithography process, the organic material in wet-etching process can be controlled by heating to make the organic material melted to flow. The size of the microstructure can be reduced and flexibly adjusted according to the pixel size of display panel, the speckle effect of the display device caused by anti-glare treatment can be reduced.

The present invention provides a method that utilizes an existing infrastructure such as atomic layer deposition or similar vapor-based deposition tool or metal salt solutions based infiltration to infiltrate certain metals or metal-based precursors into resist materials to enhance the performance of the resists for the advancement of lithography techniques.

Disclosed is a method for manufacturing a substrate for a touch screen panel in which a signal line pattern having a fine line width may be formed by forming a thin film deposition in a bezel region of a transparent substrate and forming a photoresist layer on a thin film deposition layer through an electrospinning process. The disclosed method for manufacturing a substrate for a touch screen panel comprises the steps of: preparing a plate-shaped transparent substrate having a sensing region and a bezel region located on the outer periphery of the sensing region; forming a transparent electrode layer in the sensing region of the transparent substrate; forming a thin film deposition layer in the bezel region of the transparent substrate; and forming a photoresist layer on an upper surface of the thin film deposition layer through an electrospinning process.

The present application relates to an apparatus for processing a photolithographic mask, said apparatus comprising: (a) at least one time-varying particle beam, which is embodied for a local deposition reaction and/or a local etching reaction on the photolithographic mask; (b) at least one first means for providing at least one precursor gas, wherein the precursor gas is embodied to interact with the particle beam during the local deposition reaction and/or the local etching reaction; and (c) at least one second means, which reduces a mean angle of incidence () between the time-varying particle beam and a surface of the photolithographic mask.

The present disclosure provides a method for determining a width-to-length ratio of a channel region of a thin film transistor (TFT). The method includes: S1, setting an initial width-to-length ratio of the channel region; S2, manufacturing a TFT by using a mask plate according to the initial width-to-length ratio; S3, testing the TFT manufactured according to the initial width-to-length ratio; S4, determining whether or not the test result satisfies a predetermined condition, performing S5 if the test result satisfies the predetermined condition, and performing S6 if the test result does not satisfy the predetermined condition; S5, determining the initial width-to-length ratio as the width-to-length ratio of the channel region of the TFT; S6, changing the value of the initial width-to-length ratio, adjusting a position of the mask plate according to the changed initial width-to-length ratio, and performing S2 to S4 again.

A novel salt having an amide bond in its anion structure is provided. A chemically amplified resist composition comprising the salt has advantages including minimal defects and improved values of sensitivity, LWR, MEF and CDU, when processed by lithography using high-energy radiation such as KrF excimer laser, ArF excimer laser, EB or EUV.

A chemical supply structure includes a bar-shaped body having a plurality of chemical reservoirs in which a plurality of chemicals is individually stored such that the body partially crosses an underlying substrate, a bar-shaped nozzle protruded from a bottom surface of the body and injecting injection chemicals onto the substrate, a plurality of the chemicals being mixed into the injection chemicals, and a hydrophobic unit arranged on the bottom surface of the body and on a side surface of the nozzle such that a mixed solution mixed with the injection chemicals is prevented from adhering to the bottom surface and the side surface by controlling a contact angle of the mixed solution with respect to the bottom surface and the side surface.