The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a first process treating unit configured to treat a substrate in a single-type method; a second process treating unit configured to treat a substrate in a batch-type method; and a posture changing unit provided between the first process treating unit and the second process treating unit and configured to change a posture of the substrate between a vertical posture and a horizontal posture, and wherein the substrate is loaded to and unloaded from the first process treating unit.

A method comprises the following steps. A photoresist composition is applied over an under bump metallurgy (UBM) layer to form a photoresist layer. The photoresist composition comprises a polymer, a crosslinker and a photo initiator. The photo initiator is a floating photo initiator. The photo initiator has a first concentration in a top portion of the photoresist layer and a second concentration in a bottom portion of the photoresist layer. The first concentration is greater than the second concentration. The photoresist layer is exposed. The photoresist layer is developed using a developer. A conductive layer is formed over the UBM layer. After forming the conductive layer over the UBM layer, the photoresist layer is removed.

An example method of processing a substrate includes patterning a photoresist deposited over the substrate to form a plurality of mandrels, and spin coating an overcoat material over the plurality of mandrels. The method includes exposing the substrate to an ultraviolet (UV) irradiation to generate acid in the plurality of mandrels; diffusing the acid into a portion of the overcoat material. The diffused acid induces a crosslinking reaction in the portion to form a crosslinked portion of the overcoat material. The method includes performing a developing process using a developing solution to remove the plurality of mandrels and the overcoat material except the crosslinked portion of the overcoat material.

Method and apparatus for improved and efficient spacer assisted lithography-etch-lithography etch (SALELE) processes that utilize a spin-on-material layer, where the spin-on-material layer fills gaps between spacers to protect line-end to line-end spaces created by a cut shape. The method and structures also include a final resist layer with varying critical dimensions (CDs). The use of the spin-on-material enables back end of line (BEOL) metal designs with continuous line-end to line-end spacing above a minimum that can be patterned with a cut mask and spacer only process.

A substrate processing apparatus includes a substrate stage configured to support a semiconductor substrate, the substrate stage being rotatable at a predetermined angular velocity, and a discharge device above the substrate stage, the discharge device being configured to discharge a chemical solution onto the semiconductor substrate, and the discharge device including a nozzle arm movable along a radial direction from a central region of the substrate stage to a peripheral region surrounding the central region, a nozzle on the nozzle arm, the nozzle facing the substrate stage, and the nozzle being configured to discharge the chemical solution onto the semiconductor substrate at a predetermined angle relative to a surface of the semiconductor substrate, and an angle changer configured to change the predetermined angle such that the predetermined angle gradually decreases as the nozzle arm moves from the central region to the peripheral region.

A film-forming composition for forming a resist underlayer film for a solvent development type resist that is capable of forming a good resist pattern which contains a hydrolysis-condensation product of a hydrolyzable silane compound, at least one substance that is selected from the group consisting of an aminoplast crosslinking agent and a phenoplast crosslinking agent, and a solvent, and wherein the hydrolyzable silane compound contains a hydrolyzable silane represented by formula (1).

A developing method includes developing a substrate on which a coating film of a resist has been formed and which has been subjected to exposure processing, wherein the developing supplies a developing fluid generated from a developing liquid, containing at least one of gas and mist of a weak acid, and adjusted in concentration of the weak acid, into a treatment space to develop the substrate in the treatment space.

A semiconductor photoresist composition and a method of forming patterns using the semiconductor photoresist composition are provided. The semiconductor photoresist composition includes an organometallic compound; a (meth)acrylate-based polymer including at least one selected from among metals each having a valence of 2 to 6; and a solvent.

A composition for forming an organic film, including: a compound represented by the following general formula (1); and an organic solvent, wherein in the general formula (1), X represents any one group of X1 to X3 represented by the following general formulae (2), (3), and (5), and two or more kinds of X are optionally used in combination, wherein in the general formula (3), W represents a carbon atom or a nitrogen atom; n1 represents 0 or 1; n2 represents an integer of 1 to 3; and R.sub.1 independently represents any one of groups represented by the following general formula (4), and wherein in the general formula (5), R.sub.2 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and R.sub.3 represents any one of the following groups. ##STR00001## ##STR00002##