Patent classifications
G03F7/2047
MATERIALS AND METHODS FOR DRY RESIST TECHNOLOGY
The present disclosure relates to the dry deposition of thin, amorphous metal-imidazolate resist films via molecular layer deposition and the dry removal of patterned resists using -diketonate-type compounds to produce an extreme ultraviolet (EUV) resist process that allows for more environmentally friendly, cost-effective, and high-resolution resist development.
MANUFACTURING METHOD OF CIRCUIT SUBSTRATE AND MASK STRUCTURE AND MANUFACTURING METHOD THEREOF
A manufacturing method of a circuit substrate is provided. A substrate is provided. A positive photoresist layer is coated on the substrate. Once exposure process is performed on the positive photoresist layer disposed on the substrate so as to simultaneously form concaves with at least two different depths.
METHOD FOR MAKING A MICRO- OR NANO-SCALE PATTERNED LAYER OF MATERIAL BY PHOTOLITHOGRAPHY
The invention relates to a method for making a micro- or nano-scale patterned layer of material by photolitography, comprising steps of: positioning a photomask between a light source and a layer of light sensitive material, said mask comprising a support and a layer of micro- or nano-light focusing elements fixed to the support, activating the light source so that the light source emits light radiations through the mask towards a surface of the layer of light sensitive material, developing the layer of light sensitive material so as to obtain the micro- or nano-scale patterned layer of material, wherein, during exposure of the layer of light sensitive material to light radiations, the photomask is positioned relative to the light sensitive layer so that the distance between the surface of the light sensitive layer and the layer of micro- or nano-light focusing elements is greater than a back focal length of the micro- or nano-light focusing elements.
PHOTORESIST COMPOSITION FOR EXTREME ULTRAVIOLET AND METHOD OF FORMING PHOTORESIST PATTERN USING THE SAME
The disclosed embodiments provide a photoresist composition for extreme ultraviolet (EUV) and a method of forming a photoresist pattern using the same. The photoresist composition includes an out-of-band (OOB) absorbing material absorbing light of a wavelength of 100 nm to 300 nm.
Method of processing a substrate
The present application provides a method of processing a substrate. The method of processing the substrate includes steps of forming a photosensitive layer on the substrate; performing a first exposure process to expose the photosensitive layer to actinic radiation through a first mask; performing a first developing process to remove portions of the photosensitive layer exposed to the actinic radiation and form an intermediate pattern; performing a second exposure process to expose the intermediate pattern to the actinic radiation through a second mask; performing a second developing process to remove portions of the intermediate pattern shielded from the actinic radiation and form a target pattern; and performing an etching process to remove portions of the substrate exposed by the target pattern.
Printing plate exposure method and apparatus with reduced thermal polymerization
Systems and methods for curing a photopolymer printing plates. A radiation source, such as an UV LED source having a radiation-emitting lateral dimension in a range 10-60 cm, is spaced from a substrate that holds the printing plate. The source and substrate are configured to move relative to one another in a movement direction that defines a leading edge of the radiation source and a trailing edge of the radiation source. A cooling air handling system directs a volume of cooling air into the gap between the radiation source and the printing plate in a direction from the trailing edge to the leading edge. The cooling air handling system may have one or more outlets attached at least one edge of the source, may be configured to only direct air from the trailing edge to the leading edge, or a combination thereof.