Embodiments of the present disclosure include devices, and methods of making such devices, for delivery of one or more active agents with short or long zero-order release kinetics. Embodiments also include implantable or injectable drug delivery systems capable of controlled release over long periods of time for therapeutic agents.

Systems and methods are described herein for an optical beam-steering device that includes an optical transmitter and/or receiver to transmit and/or receive optical radiation from an optically reflective surface. An array of adjustable dielectric resonator elements is arranged on the surface with inter-element spacings less than an optical operating wavelength. A controller applies a pattern of voltage differentials to the adjustable dielectric resonator elements. The pattern of voltage differentials corresponds to a sub-wavelength reflection phase pattern for reflecting the optical electromagnetic radiation. One embodiment of a dielectric resonator element includes first and second dielectric members extending from the surface. The dielectric resonator elements are spaced from one another to form a gap or channel therebetween. A voltage-controlled adjustable refractive index material is disposed within the gap.

Disclosed are resist compositions and semiconductor device fabrication methods using the same. The resist composition comprises a hypervalent iodine compound of Chemical Formula 1 below. Wherein R.sub.1 to R.sub.7 are as defined herein.

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The present application provides novel methods for the fabrication of nanostructures. More specifically, the invention relates to direct electron beam lithography with the use of silk fibroin as “green” resists.

Provided are: a primer for a semiconductor substrate that is a novel surface modifier for a resist pattern having a high adhesiveness to a resist film and enabling the formation of an excellent resist pattern with a thin film thickness; a laminated substrate wherein a surface modifier and a resist pattern are successively laminated on a substrate; a pattern formation method; and a method for manufacturing a semiconductor device. The surface modifier for a resist pattern, which is to be applied to a substrate prior to the formation of a resist pattern with a thickness of 0.10 um or less on the substrate to thereby enhance the adhesion between the substrate and the resist pattern, is characterized by comprising at least one member selected from among a compound represented by average compositional formula (1), a hydrolysate thereof and a hydrolytic condensate thereof. R.sup.1.sub.aR.sup.2.sub.b(OX).sub.cSiO.sub.(4-a-b-c)/2 (1) [wherein: R.sup.1 represents a —(CH.sub.2).sub.n group; Y represents a cyclohexenyl group, etc.; n is an integer of 0-4; R.sup.2 represents a monovalent C1-4 hydrocarbon group; X represents a hydrogen atom or a monovalent C1-4 hydrocarbon group; a is a numerical value of 1-2; b is a numerical value of 0-1; and c is a numerical value of 0-2, provided that a+b+c is not greater than 4].

A method for fabricating calcite channels in a nanofluidic device is described. A photoresist is coated on a substrate, and a portion of the photoresist is then exposed to a beam of electrons in a channel pattern. The exposed portion of the photoresist is developed to form a channel pattern, and calcite is deposited in the channel pattern using a calcite precursor gas. The deposited calcite includes at least one side having a length in a range of approximately 50 to 100 nanometers. The photoresist remaining after developing the exposed portion of the photoresist is removed.

Disclosed herein is a method that combines two different hologram origination processes in a single photoresist layer by using an interlayer to transfer structures exposed by electron beam lithography into overlapped with dot-matrix hologram areas, and fabricated holographic structures are replicated in multilayer polymer films. Dot-matrix technique is low cost process, which has high origination speed and can be used for the patterning of large areas of holograms with high diffraction efficiency. Electron beam lithography allows the formation of high resolution structures. The method allows combining these two technologies so that the final security device could contain electron beam patterned high resolution diffraction gratings, computer generated holograms, as well as dot-matrix laser patterned large hologram areas with high diffraction efficiency, providing an increased level of protection.

The present invention relates to a positive photoresist composition including an acrylic resin including a repeat unit of a specific structure, and a photosensitive acid-generating compound, a photoresist pattern using the same, and a method for manufacturing a pattern.

A method of method of operating a multibeamlet charged particle device is disclosed. In the method, a target attached to a stage is translated, and each step of selecting beamlets, initializing beamlets, and exposing the target is repeated. The step of selecting beamlets includes passing a reconfigurable plurality of selected beamlets through the blanking circuit. The step of initializing beamlets includes pointing each of the selected beamlets in an initial direction. The step of exposing the target includes scanning each of the selected beamlets from the initial direction to a final direction, and irradiating a plurality of regions of the target on the stage with the selected beamlets.

A multiple electron beam irradiation apparatus includes a first region setting circuit which sets a first frame region of a plurality of first frame regions which can be irradiated with remaining beams after excluding beams in one row and one column at end; a second region setting circuit which sets a second frame region of a plurality of second frame regions each having four corners equivalent to an irradiation position of the defective beam by using normal beams; and an electron beam irradiation mechanism which performs the first multiple electron beam irradiation processing for the each of the plurality of first frame regions of the target object by using the normal beams, and perform second multiple electron beam irradiation processing for each of the plurality of second frame regions by using at least beams at the four corners.