A coating and developing method includes: a step that applies a resist containing a metal to a front surface of a substrate to form a resist film, and exposes the resist film; a developing step that supplies a developer to the front surface of the substrate to develop the resist film; and a step that forms, before the developing step, a first protective film on a peripheral part of the substrate on which the resist film is not formed, so as to prevent the developer from coming into contact with the peripheral part of the substrate, wherein the first protective film is formed at least on a peripheral end surface and a peripheral portion of a rear surface of the substrate in the peripheral part of the substrate.

A developing method is provided. The developing method includes rotating a wafer. The developing method also includes dispensing, through a first nozzle, a developer solution onto the rotated wafer through a first nozzle at a first rotating speed. The developing method further includes dispensing, through a second nozzle, a rinse solution onto the rotated wafer through a second nozzle at a second rotating speed. The second rotating speed is less than the first rotating speed. In addition, the developing method includes simultaneously moving the first nozzle and the second nozzle during either the dispensing of the developer solution or the dispensing of the rinse solution.

The instant disclosure includes an implanting apparatus and a method thereof. The implanting apparatus has a chuck configured to carry a substrate is rotated a number of times at an angle during ion implantation. In this way, masks used during semiconductor fabrication is reduced.

Disclosed is a substrate treating method including a solvent supplying step of supplying a solvent to a center part of a substrate while increasing a rotation speed of the substrate. In the solvent supplying step, the solvent is successively supplied to the substrate until the solvent reaches a periphery edge of the substrate. With such a substrate treating method, the solvent is able to cover a substrate surface entirely with effective suppression of particles. In other words, a process of supplying the solvent to the substrate is performable with effectively improved quality.

The present disclosure provides an apparatus for dispensing liquid material, including a dispensing arm, a wafer holder against the dispensing arm, a first nozzle on the dispensing arm, a first distance laterally spacing the first nozzle and a center of the wafer holder, and a first height vertically spacing the first nozzle and a surface of the wafer holder, and a second nozzle on the dispensing arm, a second distance laterally spacing the second nozzle and the center of the wafer holder, and a second height vertically spacing the second nozzle and the surface of the wafer holder, wherein the second distance is greater than the first distance, and the first height is greater than the second height.

In a developing method, a developing nozzle starts discharge of developer to a position set in advance on a substrate, spinning about the center thereof, away from the center. This causes a flow of the developer at the center having a small centrifugal force immediately after the discharge is started. Accordingly, a dissolution product of a resist can be ejected outside the substrate more efficiently than the case when the discharge of the developer to the center is started. Moreover, this achieves distributed arrival positions of the developer directly discharged from the developing nozzle immediately after the discharge is started. Consequently, thin resist patterns especially at the center of the substrate are eliminated to obtain suppression in treatment variation.

A photolithography method includes dispensing a first liquid onto a first target layer formed over a first wafer through a nozzle at a first distance from the first target layer; capturing an image of the first liquid on the first target layer; patterning the first target layer after capturing the image of the first liquid; comparing the captured image of the first liquid to a first reference image to generate a first comparison result; responsive to the first comparison result, positioning the nozzle and a second wafer such that the nozzle is at a second distance from a second target layer on the second wafer; dispensing a second liquid onto the second target layer formed over the second wafer through the nozzle at the second distance from the second target layer; and patterning the second target layer after dispensing the second liquid.

A chemical supply structure includes a bar-shaped body having a plurality of chemical reservoirs in which a plurality of chemicals is individually stored such that the body partially crosses an underlying substrate, a bar-shaped nozzle protruded from a bottom surface of the body and injecting injection chemicals onto the substrate, a plurality of the chemicals being mixed into the injection chemicals, and a hydrophobic unit arranged on the bottom surface of the body and on a side surface of the nozzle such that a mixed solution mixed with the injection chemicals is prevented from adhering to the bottom surface and the side surface by controlling a contact angle of the mixed solution with respect to the bottom surface and the side surface.

Disclosed is a liquid processing apparatus for performing a liquid processing by supplying a processing liquid from a nozzle to a substrate. The apparatus includes: a cup body provided to surround a substrate holding unit; a nozzle arm provided with a nozzle and supported by a support unit; a moving mechanism configured to move the nozzle arm via the support unit between a stand-by position and a processing position; an elevating mechanism configured to move up and down the support unit; a cover member including a top plate portion provided above a driving region and configured to partition the driving region from a region where the substrate is held within the cup body; an opening formed in a portion corresponding to a moving path of the support unit in the top plate portion; and an exhaust mechanism configured to evacuate the driving region.

An embodiment of the present invention provides a substrate processing method. The substrate processing method, which performs a liquid processing process by injecting a processing liquid on a substrate on a spin chuck disposed inside a plurality of recovery cups that are disposed in multiple layers, includes: in a transitional period of time in which height change of any one of the recovery cups occurs, adjusting rotational speed of the spin chuck, which is configured to support the substrate, in conjunction with the height change of the recovery cup.