A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.

A developing method can perform a developing process on a resist film that is exposed to light. The developing method includes forming a developing solution film by supplying a developing solution onto a surface of a substrate having thereon a resist film that is exposed to light; thinning the developing solution film by pushing out the developing solution containing components dissolved from the resist film; and supplying a new developing solution onto the thinned developing solution film.

A nozzle that mixes fluid containing steam or mist of pressurized pure water and processing liquid containing at least sulfuric acid and ejects mixed fluid of the fluid and the processing liquid, the nozzle comprising: at least one first ejection port ejecting the fluid; at least one second ejection port ejecting the processing liquid; and at least one lead-out path being in fluid communication with the at least one first ejection port and the at least one second ejection port and leading out the mixed fluid of the fluid ejected from the at least one first ejection port and the processing liquid ejected from the at least one second ejection port, wherein the at least one first ejection port or the at least one second ejection port is arranged to be directed to position deviated from central axis of the at least one lead-out path in a plan view.

An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.

A method includes transferring a wafer into a first processing chamber by using a robot arm mechanism, and applying a photoresist on the wafer in a first processing chamber. The wafer is transferred from the first processing chamber into a second processing chamber by using the robot arm mechanism, and the photoresist is exposed to a pattern of light in the second processing chamber. The method includes transferring the wafer from the second processing chamber into a third processing chamber by using the robot arm mechanism, and developing the exposed wafer in the third processing chamber. The method includes cleaning the robot arm mechanism in a dummy chamber.

The present disclosure provides a developing unit that includes a wafer stage designed to secure a semiconductor wafer; an exhaust mechanism configured around the wafer stage and designed to exhaust a fluid from the semiconductor wafer; and a multi-switch integrated with the exhaust mechanism and designed to control the exhaust mechanism at various open states.

A liquid processing method for liquid-processing a substrate includes setting a substrate on a substrate holding device which rotates the substrate such that the substrate is held in horizontal position, supplying processing liquid to center portion of the substrate such that the center portion positioned center side with respect to peripheral portion of the substrate is liquid-processed, positioning a discharge port of a processing liquid nozzle toward downstream side in rotation direction such that the liquid is discharged to the peripheral portion obliquely to surface of the substrate and along tangential direction of the substrate while the substrate is rotated, and discharging gas from a gas nozzle perpendicularly to the surface of the substrate toward position that is adjacent to liquid landing position of the liquid on the surface of the substrate and is on the center side of the substrate, while the liquid is discharged to the peripheral portion.

A development method includes: a development step of supplying a developing solution to a surface of a substrate for manufacturing a semiconductor device after undergoing formation of a resist film and exposure, to perform development; a first rotation step of, after the development step, increasing revolution speed of the substrate to rotate the substrate in a first rotational direction around a central axis so as to spin off and remove part of the developing solution from the substrate; and a second rotation step of, after the first rotation step, rotating the substrate in a second rotational direction reverse to the first rotational direction so as to spin off and remove the developing solution remaining on the substrate from the substrate.

A processing liquid supplying apparatus supplies a processing liquid to a process object via a discharging part. In one embodiment, the apparatus includes: a processing liquid source that supplies a processing liquid; an intermediate tank connected to the processing liquid source via a transport line; a feed line provided between the intermediate tank and the discharging part; an evacuating unit that evacuates an interior of the intermediate tank to transport the processing liquid from the processing liquid source to the intermediate tank through the transport line; and a pressure adjusting unit that supplies a gas into the intermediate tank to return a pressure in the evacuated intermediate tank from a reduced pressure to a normal pressure, thereby to place the intermediate tank ready for feeding the processing liquid, having been transported into the intermediate tank, into the feed line.

A tool and a method of developing are provided. In various embodiments, the method of developing includes rotating a wafer at a first rotating speed. The method further includes dispensing a developer solution onto the wafer at the first rotating speed by a first nozzle above the wafer, wherein the first nozzle moves back and forth along a path during dispensing the developer solution. The method further includes rotating the wafer at a second rotating speed to spread the developer solution onto the wafer uniformly. The method further includes dispensing a rinse solution onto the wafer at the second rotating speed by a second nozzle above the wafer.