Patent classifications
G03F7/3021
Apparatus and method for treating substrate
A method for treating a substrate includes a substrate treating step of treating the substrate by dispensing a treating liquid onto the substrate supported on a support plate in a processing space of a processing vessel and a vessel cleaning step of cleaning the processing vessel by dispensing a cleaning solution onto a jig supported on the rotating support plate. In the vessel cleaning step, the jig is located such that the center of the jig is offset from the center of the support plate.
Film processing unit and substrate processing apparatus
A nozzle is stored in a nozzle storage hole of a waiting pod. In this state, a cleaning liquid is discharged to an outer peripheral surface of the nozzle from a plurality of discharge ports. Thus, a coating liquid and its solidified matter adhering to the nozzle are dissolved and removed from the nozzle. Subsequently, a metal removal liquid is discharged from a plurality of discharge ports to the outer peripheral surface of the nozzle. Thus, a metallic component remaining on the nozzle is dissolved and removed from the nozzle. Further, pure water is discharged to the outer peripheral surface of the nozzle from the plurality of discharge ports, and the metal removal liquid adhering to the nozzle is cleaned away.
SUBSTRATE TREATMENT APPARATUS
According to an exemplary embodiment of the present invention, a substrate treatment apparatus includes a chamber member including a treatment space in which a substrate is to be treated, a substrate support unit installed in the treatment space and supporting a substrate, a chemical ejection unit connected to the chamber member and ejecting a chemical fluid to the substrate support unit, and a steam supply unit connected to the chamber member and supplying steam to the chamber member.
Developing method, computer-readable storage medium and developing apparatus
A developing method includes: forming a liquid pool of a diluted developing solution diluted with pure water in a central portion of a substrate; forming a liquid film of the diluted developing solution on a surface of the substrate by accelerating rotation of the substrate to diffuse the liquid pool of the diluted developing solution on the entire surface of the substrate; and then supplying a developing solution onto the substrate. Supplying a developing solution includes: supplying the developing solution from a developing solution supply nozzle having a liquid contact surface while securing a gap having a predetermined size between the developing solution supply nozzle and the substrate; and moving the developing solution supply nozzle in a radial direction passing through a center of the substrate while forming a liquid pool of the developing solution between the substrate and the liquid contact surface of the developing solution supply nozzle.
Developer critical dimension control with pulse development
Embodiments of the invention include methods and structures for controlling developer critical dimension (DCD) variations across a wafer surface. Aspects of the invention include an apparatus having developer tubing and an internal cam. The internal cam is coupled to a fixed axis. A flexible divider is positioned between the developer tubing and the internal cam. The flexible divider is coupled to the internal cam such that rotation of the internal cam about the fixed axis is operable to change an inner diameter of the developer tubing.
DEVELOPING TREATMENT METHOD AND DEVELOPING TREATMENT APPARATUS
A developing treatment method for performing a developing treatment on a resist film on a substrate, includes: (A) supplying a developing solution to the substrate and developing the resist film to form a resist pattern; (B) supplying a water-based cleaning liquid to the developed substrate to clean the substrate with the water-based cleaning liquid; (C) applying an aqueous solution of a water-soluble polymer to the substrate cleaned with the water-based cleaning liquid to form a hydrophilic layer having a hydrophilic property on a surface of the substrate; and (D) cleaning the substrate on which the hydrophilic layer has been formed, with a rinse liquid, the (B) including: (a) accelerating a rotation speed of the substrate; and (b) after the (a), decelerating the rotation speed of the substrate until a start of the (C), wherein a deceleration in the (b) is lower than an acceleration in the (a).
Developing method, developing apparatus, and computer-readable recording medium
There is provided a method of developing an exposed resist film formed on a surface of a substrate to form a resist pattern, which includes: rotating the substrate about a rotation axis that extends in a direction perpendicular to the surface of the substrate that is horizontally supported; supplying a developing solution through a discharge hole positioned above the substrate onto the resist film such that the developing solution is widely spread on a surface of the resist film; and positioning a wetted part having a surface that faces the surface of the substrate, above a preceding region in the surface of the substrate, the preceding region being a region to which the developing solution is preferentially supplied through the discharge hole.
METHOD OF OPERATING DRIPPAGE PREVENTION SYSTEM
A method of preventing drippage in a fluid dispensing system. The fluid dispensing system includes a first automatic control valve (ACV), an input of the first ACV connected to fluid-source of fluid, the first ACV having positions ranging from fully closed to fully open, and a second ACV, an input of the second ACV being connected to an output of the first ACV, and an output of the second ACV being connected to a nozzle, the second ACV having positions ranging from fully closed to fully open. The method includes generating a first proxy signal representing at least a first indirect measure of a position of the first ACV. The method includes recognizing, based on at least the first proxy signal that a failure state exists in which the first ACV has failed to close. The method includes causing the second ACV to close when the failure state exists.
NOZZLE APPARATUS, APPARATUS AND METHOD FOR TREATING SUBSTRATE
An apparatus for performing liquid treatment for a substrate is provided. The apparatus for performing the liquid treatment for the substrate may include a housing having a treatment space, a substrate support unit to support and rotate the substrate in the treatment space, a liquid feeding unit including a nozzle device including a central exhaust port and multiple first outer exhaust ports, which are provided in a shape of a ring to form a concentric circle with the central exhaust port to feed mutually different treating liquids onto the substrate through respective exhaust ports, and a controller to control the liquid feeding unit.
Film processing unit, substrate processing apparatus and substrate processing method
A substrate is held and rotated by a spin chuck, and a coating liquid is discharged to the substrate. The coating liquid that is splashed outwardly from the substrate is received by an outer cup. A cleaning liquid that has been discharged from a cup cleaning nozzle is discharged to an inner peripheral surface of the outer cup through a first guide to clean the outer cup. Thus, the coating liquid, its solidified matter and the like adhering to the outer cup are dissolved and removed from the outer cup. Subsequently, a metal removal liquid that has been discharged from the cup cleaning nozzle is discharged to an inner peripheral surface of the outer cup through a second guide. Thus, a metallic component remaining on the outer cup is dissolved and removed from the outer cup.