A manufacturing method for a cured substance includes a film forming step of applying a specific photosensitive resin composition onto a base material to form a film, an exposure step of selectively exposing the film, a development step of developing the exposed film with a developer to form a pattern, a treatment step of bringing a treatment liquid into contact with the pattern, and a heating step of heating the pattern after the treatment step, in which at least one of the developer or the treatment liquid contains at least one compound selected from the group consisting of a base and a base generator.

A manufacturing method for a cured substance includes a film forming step of applying a specific photosensitive resin composition onto a base material to form a film, an exposure step of selectively exposing the film, a development step of developing the exposed film with a developer to form a pattern, a treatment step of bringing a treatment liquid into contact with the pattern, and a heating step of heating the pattern after the treatment step, in which at least one of the developer or the treatment liquid contains at least one compound selected from the group consisting of a base and a base generator.

A negative resist composition comprising a polymer comprising recurring units having at least two acid-eliminatable hydroxyl or alkoxy groups in the molecule is effective for forming a resist pattern having a high resolution and minimal LER while minimizing defects.

Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

A storage container storing a treatment liquid for manufacturing a semiconductor is provided, wherein the occurrence of defects on the semiconductor, such as particles, is suppressed and a fine resist pattern or a fine semiconductor element is manufactured. The storage container includes a storage portion that stores a treatment liquid for manufacturing a semiconductor, and the treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms and a total content of particulate metal is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid.

A storage container storing a treatment liquid for manufacturing a semiconductor is provided, wherein the occurrence of defects on the semiconductor, such as particles, is suppressed and a fine resist pattern or a fine semiconductor element is manufactured. The storage container includes a storage portion that stores a treatment liquid for manufacturing a semiconductor, and the treatment liquid for manufacturing a semiconductor includes one kind or two or more kinds of metal atoms and a total content of particulate metal is 0.01 to 100 mass ppt with respect to a total mass of the treatment liquid.

A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified, and the filtering device has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series and extends from the inlet portion to the outlet portion, in which the filter A has a porous base material made of polyfluorocarbon and a coating layer which is disposed to cover the porous base material and contains a resin having an adsorptive group.

The radiation-sensitive resin composition contains: a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid, and which has a structural unit represented by the following formula (1); and a radiation-sensitive acid generating agent. L represents a single bond, —COO—, —O—, or —CONH—. X represents a single bond, —O—, -G-O—, —CH.sub.2—, —S—, —SO.sub.2—, —NR.sup.A—, or —CONH—, wherein G represents a divalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, and R.sup.A represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. R.sup.2 and R.sup.3 each independently represent a halogen atom, a hydroxy group, a sulfanyl group, or an organic group having 1 to 20 carbon atoms.

##STR00001##

The radiation-sensitive resin composition contains: a polymer, solubility of which in a developer solution is capable of being altered by an action of an acid, and which has a structural unit represented by the following formula (1); and a radiation-sensitive acid generating agent. L represents a single bond, —COO—, —O—, or —CONH—. X represents a single bond, —O—, -G-O—, —CH.sub.2—, —S—, —SO.sub.2—, —NR.sup.A—, or —CONH—, wherein G represents a divalent aliphatic hydrocarbon group having 1 to 20 carbon atoms, and R.sup.A represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 10 carbon atoms. R.sup.2 and R.sup.3 each independently represent a halogen atom, a hydroxy group, a sulfanyl group, or an organic group having 1 to 20 carbon atoms.

##STR00001##

Organotin compounds are presented that are represented by the formula RSnL.sub.3, wherein R is a deuterated hydrocarbyl group and L is a hydrolysable ligand. Two different synthesis techniques are described for synthesizing these compositions. A first method involves reacting a primary halide hydrocarbyl compound (R—X, where X is a halide atom) with an organometallic composition comprising SnL3 moieties associated with metal cations M, where M is an alkali metal, alkaline earth metal, and/or pseudo-alkaline earth metal (Zn, Cd, or Hg), and L is either an amide ligand resulting in an alkali metal tin triamide compound or an acetylide ligand resulting in an alkali metal tin triacetylide, to form correspondingly a monohydrocarbyl tin triamide (RSn(NR′.sub.2).sub.3) or a monohydrocarbyl tin triacetylide (RSn(C≡CR.sub.s).sub.3). An alternative approach involves reacting a Grignard reagent RMgX with SnL.sub.4 in a solution comprising an organic solvent to form a monoorgano tin tralkylamide, a monoorgano tin trialkoxide, monoorgano tin tri acetylide or monoorgano tin tricarboxylate. The compositions are useful for radiation patterning, especially with EUV radiation.