Techniques herein include methods of forming conformal films on substrates including semiconductor wafers. Conventional film forming techniques can be slow and expensive. Methods herein include depositing a self-assembled monolayer (SAM) film over the substrate. The SAM film can include an acid generator configured to generate acid in response to a predetermined stimulus. A polymer film is deposited over the SAM film. The polymer film is soluble to a predetermined developer and configured to change solubility in response to exposure to the acid. The acid generator is stimulated and generates acid. The acid is diffused into the polymer film. The polymer film is developed with the predetermined developer to remove portions of the polymer film that are not protected from the predetermined developer. These process steps can be repeated a desired number of times to grow an aggregate film layer by layer.

A composition with which collapse and roughness of a resist pattern can be ameliorated and the etching resistance can be improved by metallizing a resist in the resist pattern and a resist pattern metallization method using the composition. A composition for a resist pattern metallization process, including a component (A): at least one selected from the group consisting of a metal oxide (a1), a hydrolyzable silane compound (a2), a hydrolysate (a3) of the hydrolyzable silane compound, and a hydrolysis condensate (a4) of the hydrolyzable silane compound, a component (B): an acid compound containing no carboxylic acid group (—COOH), and a component (C): an aqueous solvent, and a resist pattern metallization method for providing a resist pattern in which the composition components have permeated into a resist using the composition.

A patterned photo resist layer (for example an EUV photo resist layer), which may exhibit line width roughness (LWR) and line edge roughness (LER) or scum is treated with a plasma treatment before subsequent etching processes. The plasma treatment reduces LWR, LER, and/or photo resist scum. In one exemplary embodiment, the plasma treatment may include a plasma formed using a gas having a boron and halogen compound. In one embodiment, the gas compound may be a boron and chlorine compound, for example boron trichloride (BCl.sub.3) gas. In another embodiment, the gas compound may be a boron and fluorine compound, for example B.sub.xF.sub.y gases. The plasma treatment process may modify the photoresist surface to improve LWR, LER, and scum effects by removing roughness from the photo resist surface and removing photo resist residues which may case scumming.

Described herein is a non-aqueous composition including (a) an organic solvent, and (b) at least one additive of formulae I,

##STR00001##

where R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are independently selected from C.sub.1 to C.sub.10 alkyl, C.sub.1 to C.sub.11 alkylcarbonyl, C.sub.6 to C.sub.12 aryl, C.sub.7 to C.sub.14 alkylaryl, and C.sub.7 to C.sub.14 arylalkyl; and n is 0 or 1.

According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.

There is provided a method for manufacturing a printed wiring board that effectively suppresses pattern failure and is also excellent in fine circuit forming properties. This method includes: providing an insulating substrate including a roughened surface; performing electroless plating on the roughened surface of the insulating substrate to form an electroless plating layer less than 1.0 μm thick having a surface having an arithmetic mean waviness Wa of 0.10 μm or more and 0.25 μm or less and a valley portion void volume Vvv of 0.010 μm.sup.3/μm.sup.2 or more and 0.028 μm.sup.3/μm.sup.2 or less; laminating a photoresist on the surface of the electroless plating layer; performing exposure and development to form a resist pattern; applying electroplating to the electroless plating layer; stripping the resist pattern; and etching away an unnecessary portion of the electroless plating layer to form a wiring pattern.

Described herein is a non-aqueous composition including (a) an organic protic solvent, (b) ammonia, and (c) at least one additive of formulae I or II

##STR00001## where R.sup.1 is H R.sup.2 is selected from H, C.sub.1 to C.sub.10 alkyl, C.sub.1 to C.sub.10 alkoxy, C.sub.6 to C.sub.10 aryl, and C.sub.6 to C.sub.10 aroxy, R.sup.3 is selected from R.sup.2, R.sup.4 is selected from C.sub.1 to C.sub.10 alkyl, C.sub.1 to C.sub.10 alkoxy, C.sub.6 to C.sub.10 aryl, and C.sub.6 to C.sub.10 aroxy, R.sup.10, R.sup.12 are independently selected from C.sub.1 to C.sub.10 alkyl and C.sub.1 to C.sub.10 alkoxy, m is 1, 2 or 3, and n is 0 or an integer from 1 to 100.

The present disclosure relates to a process solution composition for EUV photolithography and a pattern forming method using same. The process solution composition includes 0.00001% to 0.01% by weight of a fluorine-based surfactant, 0.00001% to less than 0.01% by weight of a pattern reinforcing agent represented by Formula (1), and 0.00001% to 0.001% by weight of a material selected from the group consisting of triol derivatives, tetraol derivatives, and mixture thereof, and the balance being water.

Embodiments provided herewith are directed to self-assembled methods of preparing a patterned surface for sequencing applications including, for example, a patterned flow cell or a patterned surface for digital fluidic devices. The methods utilize photolithography to create a patterned surface with a plurality of microscale or nanoscale contours, separated by hydrophobic interstitial regions, without the need of oxygen plasma treatment during the photolithography process. In addition, the methods avoid the use of any chemical or mechanical polishing steps after the deposition of a gel material to the contours.

A pattern forming material according to an embodiment is a pattern forming material comprising a polymer composed of a plurality of monomer units bonded to each other. Each of the monomer units includes an ester structure having a first carbonyl group and at least one second carbonyl group bonded to the ester structure. A second carbonyl group farthest from a main chain of the polymer constituting the pattern forming material among second carbonyl groups is in a linear chain state.