A metal probe structure and a method for fabricating the same are provided. The metal probe structure includes a multi-layer substrate, a first flexible dielectric layer, a second flexible dielectric layer, and a plurality of first metal components. The first flexible dielectric layer is disposed over the multi-layer substrate and has a conductive layer formed thereover. The second flexible dielectric layer is disposed over the first flexible dielectric layer to cover the conductive layer. The plurality of first metal components is disposed over the conductive layer and partially in the second flexible dielectric layer to serve as a metal probe.

A substrate processing apparatus includes a substrate holding section, a chemical liquid supply section, a substrate information acquiring section, a chemical liquid processing condition information acquiring section, and a controller. The substrate information acquiring section acquires substrate information including hardened layer thickness information indicating a thickness of a hardened layer in a resist layer of a processing target substrate or ion implantation condition information indicating a condition for ion implantation by which the hardened layer has been formed in the resist layer. The chemical liquid processing condition information acquiring section acquires based on the substrate information chemical liquid processing condition information indicating a chemical liquid processing condition for the processing target substrate from a trained model. The controller controls the substrate holding section and the chemical liquid supply section -to perform processing with a chemical liquid on the processing target substrate based on the chemical liquid processing condition information.

In systems and methods for removing a photoresist film off of a wafer, the wafer is moved into a bath of a process liquid in a process tank. The process liquid removes the photoresist film from the wafer. The process liquid is pumped from the process tank to a filter assembly and moved through filter media to filter out solids from the process liquid, and the filtered process liquid is returned to the process tank. A scraper scrapes the filter media to prevent clogging of the filter media by accumulated solids.

A filtering device is for obtaining a chemical liquid by purifying a liquid to be purified, and has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series between the inlet portion and the outlet portion and extends from the inlet portion to the outlet portion, in which the filter A includes at least one kind of porous membrane selected from the group consisting of a first porous membrane having a porous base material made of polytetrafluoroethylene and a non-crosslinked coating which is formed to cover the porous base material and contains a perfluorosulfonic acid polymer and a second porous membrane containing polytetrafluoroethylene blended with a perfluorosulfonic acid polymer.

A cleaning solution includes a solvent having Hansen solubility parameters: 25>δ.sub.d>13, 25>δ.sub.p>3, 30>δ.sub.h>4; an acid having an acid dissociation constant pKa: −11<pKa<4, or a base having pKa of 40>pKa>9.5; and a surfactant. The surfactant is an ionic or non-ionic surfactant, selected from

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R is substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and non-ionic surfactant has A-X or A-X-A-X structure, where A is unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, X includes polar functional groups selected from —OH, ═O, —S—, —P—, —P(O.sub.2), —C(═O)SH, —C(═O)OH, —C(═O)OR—, —O—, —N—, —C(═O)NH, —SO.sub.2OH, —SO.sub.2SH, —SOH, —SO.sub.2—, —CO—, —CN—, —SO—, —CON—, —NH—, —SO.sub.3NH—, and SO.sub.2NH.

A photoresist stripping tool includes a reservoir configured to contain photoresist stripping solution and a Pb filter comprising a filter element with Tin (Sn) exterior surfaces. A semiconductor wafer fabrication system includes a semiconductor wafer attached to the photoresist stripping tool that strips photoresist from the semiconductor wafer. A photoresist stripping processes includes stripping photoresist from a leaded semiconductor wafer with photoresist stripping solution within the photoresist stripping tool, filtering Lead Pb from the photoresist stripping solution with the Pb filter, and stripping photoresist from a lead-free semiconductor wafer with the filtered photoresist stripping solution.

Disclosed herein are an organic processing liquid for resist film patterning which is capable of suppressing the occurrence of defects in resist patterns, and a pattern forming method. Provided is an organic processing liquid for resist film patterning, which is used to carry out at least one of developing or cleaning of a resist film obtained from an actinic ray-sensitive or radiation-sensitive composition, the liquid including an organic solvent, in which the content of an oxidant in the organic processing liquid is 10 mmol/L or less.

A stripping device and a display substrate production line are provided. The stripping device comprises a stripping chamber. A stripping liquid with a set temperature is provided within the stripping chamber; the stripping device further comprising a liquid jet component, the liquid jet component includes a liquid supplying pipeline and a liquid jet head, the liquid supplying pipeline is configured to supply a cleaning liquid to the liquid jet head, the liquid jet head is configured to output the cleaning liquid, the liquid supplying pipeline is arranged in the stripping chamber, and the stripping liquid enables the cleaning liquid in the liquid supplying pipeline to reach the set temperature. The stripping device enables the cleaning liquid to reach the set temperature, such that the stripping liquid and the photoresist remaining on the display substrate are effectively removed, the stripping liquid is prevented from being separated out on the display substrate and is further prevented from being crystallized to block an output port of the liquid jet head; and the stripping device further effectively uses the thermal energy in the stripping chamber to save energy consumption.

According to the present invention, it is possible to provide a cleaning solution which removes a photoresist on a surface of a semiconductor element having a low dielectric constant film (a low-k film) and a material that contains 10 atom % or more of tungsten, wherein the cleaning solution contains 0.001-5 mass % of an alkaline earth metal compound, 0.1-30 mass % of an inorganic alkali and/or an organic alkali, and water.

The disclosed subject matter relates to a rinse and methods of use thereof for removing an edge protection layer and residual hardmask components (e.g., metals) from the edge and at least one proximate surface of a wafer/substrate where the rinse includes acetic acid and/or a halogenated acetic acid of structure (A) wherein R.sub.1 and R.sub.2 are independently hydrogen or a halogen and R.sub.3 is a halogen and (ii) a compound having structure (B) wherein each of R.sub.a, R.sub.b, R.sub.c, R.sub.d, R.sub.e, R.sub.f, R.sub.g and Rh may independently be hydrogen, a substituted or an unsubstituted alkyl group, a substituted or an unsubstituted halogenated alkyl group, a substituted or an unsubstituted alkyl carbonyl group, a halogen, and a hydroxy group.