A substrate treatment device according to an embodiment includes a placement portion on which a substrate is placed and rotated, a liquid supply portion which supplies a liquid to a surface on an opposite side to the placement portion of the substrate, a cooling portion which supplies a cooling gas to a surface on a side of the placement portion of the substrate, and a control portion which controls at least one of a rotation speed of the substrate, a supply amount of the liquid, and a flow rate of the cooling gas. The control portion brings the liquid present on a surface of the substrate into a supercooled state and causes at least a part of the liquid brought into the supercooled state to freeze.

Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.

A filtering device for obtaining a chemical liquid by purifying a liquid to be purified has an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path which includes the filter A and the filter B arranged in series between the inlet portion and the outlet portion and extends from the inlet portion to the outlet portion, in which the filter A has a porous base material made of polyfluorocarbon and a coating layer which is disposed to cover the porous base material and contains a first resin having a hydrophilic group.

Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.

Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.

The present disclosure provides a photoresist stripping device and a photoresist stripping method. The photoresist stripping device including a conveyor belt, a liquid storage tank, a filtering device, a lighting device and a stripping tank. Through disposing a metal-organic framework (MOF) material in a filter element, the MOF material is configured to adsorb a dissolved oxygen of the stripping solution in a visible light environment, thereby reducing the difference in oxygen concentration between the inside and outside of the gap, and alleviating hollowing out phenomenon of copper caused by stripping the photoresist of the substrate. Further, when reaching a saturation step, can heat or emit ultraviolet light to release the dissolved oxygen to make the filter material recyclable.

Disclosed is a liquid chemical vapor recovery device, a wet stripping device, a photoresist stripping process and a method for manufacturing a thin film transistor-liquid crystal display using the same. The liquid chemical vapor recovery device comprises: an exhaust pipe for discharging a gas in a processing chamber for wet processing with a liquid chemical, the gas comprising a vapor of the liquid chemical; and a reflux pipe for refluxing the liquid chemical condensed in the exhaust pipe to a liquid chemical storage tank, the reflux pipe having an inlet connected to the exhaust pipe and an outlet connected to the liquid chemical storage tank, wherein, at least a part of the exhaust pipe positioned upstream of the inlet of the reflux pipe is formed as a pipe segment with a rugged inner surface.

Inclination identifying information for identifying inclination of a substrate with respect to a reference plane is detected. Based on the detected inclination identifying information and a first angle, a holding position of the substrate held by a rotation holder is corrected in a direction that is in parallel to the reference plane such that a distance between a portion of the substrate that is to be processed by a peripheral region processor and the center of the substrate is maintained constant. In this state, processing having directivity of inclination with respect to the reference plane by the first angle is performed on a peripheral region of the substrate by the peripheral region processor while the substrate is rotated by the rotation holder.

A method for improving uniformity of photoresist development includes: a substrate is provided, which is coated with a photoresist layer and includes a first area and a second area around a periphery of the first area; a second developer solution is transmitted to the second area, and the photoresist layer located in the second area is developed; a first developer solution is transmitted to the first area, and the photoresist layer located in the first area is developed.

A process for the production of three-dimensional structures involves generating stepped structures in the micrometer to millimeter range. A novel possibility for realizing microstructures for micromechanical and high-performance electronic structures allows a substantially free shaping of and high-throughput production of stepped structures is met according to the invention by coating a copper-clad substrate at least once with a first photoresist for generating a defined height of at least one structure step and coating the first photoresist at least once with a second photoresist for generating a defined height of at least one further structure step, wherein the first photoresist and the second photoresist have different photosensitivities and transmission characteristics which generate structure-forming regions at least of the first photoresist and second photoresist by exposing with different wavelengths and radiation doses and after developing. The structure-forming regions at least partially overlap one another and form a stepped three-dimensional structure.