The present disclosure relates to a film formed with a precursor and an organic co-reactant, as well as methods for forming and employing such films. The film can be employed as a photopatternable film or a radiation-sensitive film. In particular embodiments, the carbon content within the film can be tuned by decoupling the sources of the radiation-sensitive metal elements and the radiation-sensitive organic moieties during deposition. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.

A composite hard mask is disclosed. In some embodiments, a first sacrificial hard mask layer comprising an amorphous carbon or silicon nitride and a second sacrificial hard mask layer comprising a silicon nitride, silicon oxide, metal, metal oxide, or metal nitride, wherein the first and second sacrificial hard mask layers are not made of the same material.

A substrate processing apparatus includes a processing chamber providing a processing space for processing a substrate and processing a substrate, a substrate support configured to support the substrate, a blocking plate below the substrate support and configured to prevent supercritical fluid from being directly sprayed onto the substrate, a first supply device configured to supply supercritical fluid under a first condition to the processing chamber, a second supply device configured to supply supercritical fluid under a second condition at a higher temperature than that of supercritical fluid under the first condition to the processing chamber, a discharge device configured to discharge supercritical fluid from the processing chamber, and a control device configured to control operations of the first supply device, the second supply device, and the discharge device. The control device is configured to direct the first supply device to supply supercritical fluid prior to the second supply device.

An embodiment of the inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a lower electrode having an upper surface, on which a substrate is positioned, and a plasma generating device provided at an upper portion of the lower electrode, having an upper electrode, and having independent discharge spaces divided by a plurality of partition walls, and a controller that performs a control to independently supply a reaction gas into the independent discharge spaces, respectively.

A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.

Processes for removing photoresist layer(s) from a workpiece, such as a semiconductor are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The workpiece can have a photoresist layer and a low-k dielectric material layer. The method can include performing a hydrogen radical etch process on the workpiece to remove at least a portion of the photoresist layer. The method can also include exposing the workpiece to an ozone process gas to remove at least a portion of the photoresist layer.

A touch sensor having a visible area and a peripheral area includes a substrate, a metal nanowire layer, a transitional insulating portion, and a silver layer. The metal nanowire layer is disposed on the substrate and defines a plurality of electrode portions corresponding to the visible area and a plurality of wiring portions corresponding to the peripheral area, in which the adjacent wiring portions are spaced apart by a spaced region. The transitional insulating portion is disposed in the spaced region and adjacent and connected to a sidewall of each of the wiring portions, and a gap is between two of the transitional insulating portions that are respectively connected to the adjacent wiring portions. The silver layer is disposed on an upper surface of the wiring portions, and the silver layer and the wiring portions together constitute a plurality of peripheral traces of the touch sensor.

A plasma ashing method is provided. The plasma ashing method includes analyzing the process status of each of a number of semiconductor substrate models undergoing a tested plasma ash process by a residue gas analyzer. The tested plasma ash processes for the semiconductor substrate models utilize a plurality of tested recipes. The plasma ashing method further includes selecting one of the tested recipes as a process recipe for a plasma ash process.

A touch sensor having a visible area and a peripheral area includes a substrate, a metal nanowire layer, and a silver layer. The metal nanowire layer is disposed on a main surface of the substrate and defines an electrode portion and first and second wirings, in which the first wiring includes a lead-out portion connected to the electrode portion and a lead portion connected to the lead-out portion, and the second wiring is disposed on a side of the first wiring relatively away from the visible area and adjacent to an edge of the main surface. The silver layer is stacked on the first and second wirings and has a first side facing toward the visible area and a second side facing away from the visible area, and an edge roughness on the first side is greater than an edge roughness on the second side.

A touch sensor having a visible area and a peripheral area includes a substrate, a metal nanowire layer, and a silver layer. The metal nanowire layer is disposed on a main surface of the substrate and defines an electrode portion and first and second wirings, in which the first wiring includes a lead-out portion connected to the electrode portion and a lead portion connected to the lead-out portion, and the second wiring is disposed on a side of the first wiring relatively away from the visible area and adjacent to an edge of the main surface. The silver layer is stacked on the first and second wirings and has a first side facing toward the visible area and a second side facing away from the visible area, and an edge roughness on the first side is greater than an edge roughness on the second side.