G03F7/428

CLEANING DEVICE USING MICRO/NANO-BUBBLES
20190329520 · 2019-10-31 · ·

Provided are a cleaning method and cleaning device for cleaning with micro/nano-bubbles, with which a simple method of spraying a treatment solution containing micro/nano-bubbles onto a substrate to be processed makes it possible to efficiently and reliably peel off residual resist or remove contaminants from the substrate, while reducing an environmental load.

This cleaning method is characterized in that, with respect to a substrate to be treated to which a resist film has adhered onto the substrate or a substrate to be treated to which the surface thereof has been contaminated with a metal or metal compounds, the resist film is peeled off or the metals or metal compounds are removed by spraying onto the substrate to be treated a treatment solution containing gaseous micro/nano-bubbles and having a temperature maintained at 30 C. to 90 C., the mean particle size of the micro/nano-bubbles when measured by an ice embedding method using a cryo-transmission electron microscope being 100 nm or smaller, preferably 30 nm or smaller, and also preferably the density of such bubbles being 10.sup.8 or more bubbles per 1 mL.

Cancer cell-trapping metal filter, cancer cell-trapping metal filter sheet, cancer cell-trapping device, and manufacturing methods therefor

Provided are a cancer cell-trapping metal filter which has a high opening ratio, a cancer cell-trapping metal filter sheet, a cancer cell-trapping device using the cancer cell-trapping filter, and manufacturing methods therefor. According to a cancer cell-trapping metal filter 1, openings of connected through-holes 12 that are formed in a metal sheet 11 have a wave shape, and thus it is possible to extract a CTC from other components by utilizing a hole diameter on a short-side side of the openings, and it is possible to make the connected through-holes be closer to each other due to the wave shape while maintaining a CTC trapping ability. Accordingly, it is possible to further improve the opening ratio in the cancer cell-trapping metal filter 1.

CLEANING METHOD AND CLEANING DEVICE USING MICRO/NANO-BUBBLES
20180161737 · 2018-06-14 · ·

Provided are a cleaning method and cleaning device for cleaning with micro/nano-bubbles, with which a simple method of spraying a treatment solution containing micro/nano-bubbles onto a substrate to be processed makes it possible to efficiently and reliably peel off residual resist or remove contaminants from the substrate, while reducing an environmental load. This cleaning method is characterized in that, with respect to a substrate to be treated to which a resist film has adhered onto the substrate or a substrate to be treated to which the surface thereof has been contaminated with a metal or metal compounds, the resist film is peeled off or the metals or metal compounds are removed by spraying onto the substrate to be treated a treatment solution containing gaseous micro/nano-bubbles and having a temperature maintained at 30 C. to 90 C., the mean particle size of the micro/nano-bubbles when measured by an ice embedding method using a cryo-transmission electron microscope being 100 nm or smaller, preferably 30 nm or smaller, and also preferably the density of such bubbles being 10.sup.8 or more bubbles per 1 mL.

Photoresist removal method and photoresist removal system

This application relates to a photoresist removal method, including: acquiring a target wafer, a photoresist being provided on a surface of the target wafer, a surface of a photoresist layer of the photoresist being plated with a metal overhead layer; immersing the target wafer in a first organic solvent at a first temperature in a water bath for a first duration; rinsing the target wafer with a new first organic solvent in response to an end of the first duration; performing, in the first organic solvent, ultrasonic cleaning on the rinsed target wafer for a second duration based on a target ultrasonic power; removing the residual first organic solvent on the surface of the target wafer in response to an end of the second duration; and drying the target wafer with the solvent removed by simultaneous centrifugal drying and gas purging to obtain the target wafer with the photoresist removed.