A method for photoresist-free photolithography to pattern a surface of conductor or semiconductor substrate and deposit a material includes surface cleaning and irradiating a surface through a mask with VUV photons from a lamp. Photons are generated with a VUV lamp having a wavelength of 160 nm-200 nm and with an intensity sufficient to alter the surface. The photons are directed through a mask pattern to alter the surface chemistry or structure in those areas of the substrate defined by the mask. Material is selectively deposited onto the surface, in those portions of the surface that are exposed to the VUV photons, or unexposed to the VUV photons, depending on the substrate surface. A method uses a seed film and then electroplates metal onto the seed film in the mask pattern. A method provides for electroless deposition of metal and another for altering surface chemistry in the mask pattern.

An illumination optical system, which irradiates a target object with light from a light source unit includes: an integrator optical system that is disposed on an optical path of the light emitted from the light source unit and uniformizes an illuminance distribution of the light with which the target object is to be irradiated; an input lens that is disposed on a light incident side of the integrator optical system; a bandpass filter that is disposed between the input lens and the integrator optical system; an aperture that is disposed on a light emission side of the integrator optical system; and a condenser lens that irradiates the target object with light emitted from the aperture, the aperture having a size larger than a size of an irradiation region of the light with which the target object is to be irradiated.

Disclosed herein a vacuum ultra violet light source device that is capable of suppressing an amount of ozone generation when the vacuum ultra violet light is emitted into an atmosphere containing oxygen, a light irradiation device incorporating the vacuum ultra violet light device, and a method of patterning a self-assembled monolayer employing the light irradiation device. The light irradiation device is configured to irradiate a self-assembled monolayer (SAM) formed on a workpiece with light containing vacuum ultra violet light through a mask M on which a prescribed pattern is formed so as to perform a patterning process of the SAM. The light containing the vacuum ultra violet light to be irradiated onto the SAM is light that is pulsed light and has a duty ratio of light emission equal to or greater than 0.00001 and equal to or less than 0.01.

An ignition facilitated electrodeless sealed high intensity illumination device is configured to receive a laser beam from a continuous wave (CW) laser light source. A sealed chamber is configured to contain an ionizable medium. The chamber has an ingress window disposed within a wall of a chamber interior surface configured to admit the laser beam into the chamber, a plasma sustaining region, and a high intensity light egress window configured to emit high intensity light from the chamber. The CW laser beam is producible by a CW laser below 250 Watts configured to produce a wavelength below 1100 nm. The device is configured to focus the laser beam to a full width at half maximum (FWHM) beam waist of 1-15 microns.sup.2 and a Rayleigh length of 6 microns or less, and the plasma is configured to be ignited by the CW laser beam.

An ignition facilitated electrodeless sealed high intensity illumination device is disclosed. The device is configured to receive a laser beam from a continuous wave (CW) laser light source. A sealed chamber is configured to contain an ionizable medium. The chamber has an ingress window disposed within a wall of a chamber interior surface configured to admit the laser beam into the chamber, a plasma sustaining region, and a high intensity light egress window configured to emit high intensity light from the chamber. A path of the CW laser beam from the laser light source through the ingress window to a focal region within the chamber is direct. The ingress window is configured to focus the laser beam to within a predetermined volume, and the plasma is configured to be ignited by the CW laser beam, optionally by heating of a non-electrode ignition agent located entirely within the chamber.

The disclosed embodiments relate to a charged particle source module for generating and emitting a charged particle beam, such as an electron beam, comprising: a frame including a first frame part, a second frame part, and one or more rigid support members which are arranged between said first frame part and said second frame part; a charged particle source arrangement for generating a charged particle beam, such as an electron beam, wherein said charged particle source arrangement, such as an electron source, is arranged at said second frame part; and a power connecting assembly arranged at said first frame part, wherein said charged particle source arrangement is electrically connected to said connecting assembly via electrical wiring.

A photoresist composition includes an organometallic compound including at least one metal-ligand bond and having an absorbance to first light, the at least one metal-ligand bond including a metal core and at least one organic ligand bonded to the metal core, a photosensitive additive having an absorbance to second light having a longer wavelength than the first light, and a solvent. A method of manufacturing an integrated circuit device includes forming a photoresist film on a substrate based on using the photoresist composition, exposing a first area of the photoresist film to the first light, exposing an entire area of the photoresist film to the second light, and forming a network of metal structures in the first area based on baking the photoresist film.

A light source apparatus configured to emit light includes a condenser unit configured to reflect light from a light source and to condense the light on a condensing point, a light shielding unit disposed on an optical path of the light from the condenser unit, and a reflector unit disposed between the condenser unit and the light shielding unit and configured to reflect the light from the condenser unit. The reflector unit is disposed so that reflected light is condensed by the condenser unit toward the condensing point.

A substrate processing apparatus may be presented. The apparatus comprising a lamp unit configured to emit a UV (ultraviolet) light, a lamp compartment configured to contain one or more lamp units, a processing chamber with a susceptor and configured to process a substrate, the susceptor is configured to support a substrate for processing, a separation window disposed between the lamp compartment and the processing chamber, and configured to be transparent for a light from the UV lamp to reach to the substrate, a measurement unit disposed in a wall of the processing chamber, the measurement unit configured to measure a light intensity in the processing chamber, and a power controller electrically connected to the measurement unit and configured to adjust a supply of power to the lamp compartment according to the light intensity measured by the measurement unit.

Disclosed herein is a shielding system for use in a surface treatment process, comprising a first disk and a second disk. The first disk and second disk being arranged substantially parallel to each other. The first disk comprises a slit-shaped opening, the second disk comprises a plurality of openings: and the first and second disk are arranged to move with respect to each other around a common axis. Herewith, the slit can be positioned at one or more openings of the plurality of openings to form a passage through the shielding system.