An optical component has a diffraction structure for diffractively influencing a direction of emergence of light of at least one wavelength incident on the optical component. The diffraction structure includes at least two diffraction substructures superimposed in at least one portion of the optical component and having first positive diffraction structures and first negative diffraction structures. A first diffraction substructure has first positive diffraction structures and first negative diffraction structures arranged to have a symmetry following a first symmetry condition. A second diffraction substructure has second positive diffraction structures and second negative diffraction structures arranged to have a second symmetry condition differing from the first symmetry condition. This can result in an optical component for which a production of a diffraction structure with a diffraction effect for different target wavelengths and/or an improved diffraction effect for one and the same target wavelength is made more flexible.

An insert for a source chamber of an EUV radiation source has a pressure stage and, spaced apart from it, a stop.

A method for lithographically patterning a photoresist is provided. The method includes receiving a wafer with the photoresist and exposing the photoresist using an extreme ultraviolet (EUV) radiation reflected by an EUV mask. The EUV mask includes a substrate, a reflective multilayer stack on the substrate, a capping layer on the reflective multilayer stack, a patterned absorber layer on the capping layer. The patterned absorber layer includes a matrix metal and an interstitial element occupying interstitial sites of the matrix metal, and a size ratio of the interstitial element to the matrix metal is from about 0.41 to about 0.59.

Provided are a pellicle frame, a pellicle, an exposure original plate with a pellicle, an exposure method, a method for manufacturing a semiconductor, and a method for manufacturing a liquid crystal display board, the pellicle frame having an upper end surface on which a pellicle film is provided.

A collector mirror for an extreme ultraviolet (EUV) light generator includes a first mirror in a vessel, the vessel being configured to receive a material and a laser beam for generating the EUV light, a second mirror surrounding the first mirror, and a detachable third mirror between the first mirror and the second mirror, the third mirror having an inner diameter that is not smaller than an outer diameter of the first mirror, and an outer diameter that is not larger than an inner diameter of the second mirror.

A target substance replenishment device may include a first container containing a solid target substance, a first path through which the solid target substance supplied from the first container passes, a first supply switching device switching between a first state where supply of the solid target substance from the first container to the first path is suppressed and a second state where the supply of the solid target substance from the first container to the first path is allowed, a first valve connected to the first path, a second path which is connected to the first valve and through which the solid target substance having passed through the first valve passes, a first detector outputting a first detection signal indicating that the second path is clogged with the solid target substance, and a processor controlling the first supply switching device to the first state based on the first detection signal.

An EUV photolithography system utilizes a baseplate of an EUV pod to unload an EUV reticle from a chuck within an EUV scanner. The baseplate includes a top surface and support pins extending from the top surface. The when the reticle is unloaded onto the baseplate, the support pins hold the reticle at relatively large distance from the top surface of the baseplate. The support pins have a relatively low resistance. The large distance and low resistance help ensure that particles do not travel from the baseplate to the reticle during unloading.

An extreme ultraviolet light (EUV) source apparatus includes a light source part for generating a plasma that emits EUV light; a first vacuum housing in which the light source part is located; a second vacuum housing arranged between the first vacuum housing and a utilizing apparatus in which the EUV light is utilized; and a debris trap located inside the second vacuum housing for deflecting debris particles emitted from the plasma, whereby the debris particles do not ingress into the utilizing apparatus. Between the first and second vacuum housings, there is provided a window through which the EUV light emitted from the light source part passes from the first vacuum housing to the second vacuum housing. A wall of the second vacuum housing has a through-hole and a window that is configured to allow the EUV light to pass from the second vacuum housing to the utilizing apparatus.

An extreme ultra violet (EUV) light source apparatus includes a metal droplet generator, a collector mirror, an excitation laser inlet port for receiving an excitation laser, a first mirror configured to reflect the excitation laser that passes through a zone of excitation, and a second mirror configured to reflect the excitation laser reflected by the first mirror.

An inner insert for a passage opening in an outer insert for an EUV radiation source is embodied in multiple parts and/or has a plurality of sections that extend in the longitudinal direction and have different internal diameters (d.sub.i, d.sub.a).