The present disclosure relates to a patterning structure having a radiation-absorbing layer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the radiation-absorbing layer provides an increase in radiation absorptivity and/or patterning performance of the imaging layer.

A method for manufacturing a semiconductor device includes forming a resist layer including a resist composition over a substrate. The resist composition includes: a metal, a ligand, and a solvent. The solvent is mixture of a first solvent having a vapor pressure of at least 0.75 kPa, wherein the first solvent is one or more of an ether, an ester, an alkane, an aldehyde, or a ketone, and a second solvent different from the first solvent. Alternatively, the solvent is a third solvent, wherein the third solvent is a C4-C14 tertiary alcohol. The resist layer is patterned.

Some implementations herein include a detection circuit and a fast and accurate in-line method for detecting blockage on a droplet generator head of an extreme ultraviolet exposure tool without impacting the flow of droplets of a target material through the droplet generator head. In some implementations described herein, the detection circuit includes a switch circuit that is configured in an open configuration, in which the switch is electrically open between two electrode elements. When an accumulation of the target material occurs across two or more electrode elements on the droplet generator head, the accumulation functions as a switch that closes the detection circuit. A controller may detect closure of the detection circuit.

A positive resist composition comprising a base polymer comprising recurring units (a) of an ammonium salt of a carboxylic acid having an iodized or brominated hydrocarbyl group and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group has a high sensitivity and resolution and forms a pattern of good profile with reduced edge roughness and improved dimensional uniformity.

In an example, a method of operating an ultraviolet (UV) light source includes providing a supply power to the UV light source, and activating, using the supply power, the UV light source to emit UV light during a series of activation cycles. The method also includes, during at least one activation cycle in the series, sensing the UV light emitted by the UV light source to measure an optical parameter of the UV light. The optical parameter is related to an antimicrobial efficacy of the UV light. The method further includes adjusting, based on the measured optical parameter, an electrical parameter of the supply power to maintain a target antimicrobial efficacy of the UV light over the series of activation cycles.

A coupling arrangement including a first fitting, a second fitting, and a rotational coupler which when turned presses the first fitting against the second fitting, in which the fittings engage rotationally to inhibit relative rotation of the fittings. For example, one of the fittings may have protrusions and the other fitting may have recesses arranged to receive the protrusions.

A beam delivery system according to an aspect of the present disclosure is used for an extreme ultraviolet light generation apparatus and includes a propagation mirror disposed on an optical path between a laser apparatus and a condensation optical system and configured to change the propagation direction of a pulse laser beam, and a curvature mirror disposed on an optical path between the propagation mirror and the condensation optical system and having a concave reflective surface configured to convert the pulse laser beam to be incident on the condensation optical system into a convergent beam. The curvature mirror has a focal length selected so that the beam spread angle of the pulse laser beam from the curvature mirror is constant irrespective of thermal deformation of the propagation mirror or constant with change in a predetermined allowable range irrespective of thermal deformation of the propagation mirror.

A lithography system includes a collector having a mirror surface, a laser generator aiming at an excitation zone in front of the mirror surface of the collector, a droplet generator, and a droplet deflector operative to apply a force at a position between the droplet generator and the excitation zone.

Apparatus for and method of controlling formation of droplets used to generate EUV radiation. The droplet source includes a fluid exiting an nozzle and a sub-system having an electro-actuatable element producing a disturbance in the fluid. The droplet source produces a stream that breaks down into droplets that in turn coalesce into larger droplets as they progress towards the irradiation region. The electro-actuatable element is driven by a control signal having a sine wave component and a square wave component. Various parameters such as a phase difference between the sine wave component and the square wave component are measured and controlled to minimize the formation of noncoalesced satellite droplets in the stream.

A reticle is pre-heated prior to an exposure operation of a semiconductor substrate lot to reduce substrate to substrate temperature variations of the reticle in the exposure operation. The reticle may be pre-heated while being stored in a reticle storage slot, while being transferred from the reticle storage slot to a reticle stage of an exposure tool, and/or in another location prior to being secured to the reticle stage for the exposure operation. In this way, the reduction in temperature variation of the reticle in the exposure operation provided by pre-heating the reticle may reduce overlay deltas and misalignment for the semiconductor substrates that are processed in the exposure operation. This increases overlay performance, increases yield of the exposure tool, and increases semiconductor device quality. Moreover, pre-heating the reticle prior to securing the reticle to the reticle stage for the exposure operation reduces and/or minimizes the impact that the pre-heating has on throughput and processing times of the exposure tool.