A method for optimization to increase lithographic apparatus throughput for a patterning process is described. The method includes providing a baseline dose for an EUV illumination and an initial pupil configuration, associated with a lithographic apparatus. The baseline dose and the initial pupil configuration are configured for use with a dose anchor mask pattern and a corresponding dose anchor target pattern for setting an illumination dose for corresponding device patterns of interest. The method includes biasing the dose anchor mask pattern relative to the dose anchor target pattern; determining an acceptable lower dose for the biased dose anchor mask pattern and the initial pupil configuration; unbiasing the dose anchor mask pattern relative to the dose anchor target pattern; and determining a changed pupil configuration and a mask bias for the device patterns of interest based on the acceptable lower dose and the unbiased dose anchor mask pattern.

According to one embodiment, a correction plot in which a slit width is set different depending on overlay deviation in a shot region is generated. Then, a light-exposure scanning speed defined by a relative speed between a photomask stage with a photomask mounted thereon and a stage with a processing object mounted thereon is set, to obtain a desired light-exposure amount at each coordinate position, in accordance with the slit width in the correction plot. Then, a light-exposure process is performed, while controlling the slit width of a light-exposure slit, the photomask stage, and the stage, in accordance with the correction plot and the light-exposure scanning speed.

A shutter blade assembly for a photolithography machine, a large-field of view (FoV) photolithography machine and an exposure method are disclosed. A scanning-directional shutter blade subassembly is moved once during each illuminance test and then moved above alignment marks after the test. During exposure, the scanning-directional shutter blade subassembly moves with a mask stage in the same direction and at the same speed so that it stays stationary relative to the alignment marks on a photomask (4). In case of full-FoV exposure, it is not necessary for a non-scanning-directional shutter blade subassembly to be moved, while in case of partial-FoV exposure, it is moved into the partial exposure FoV and defines there a window for obtaining a light spot with a desired shape by modulating illumination light. After that, with the non-scanning-directional shutter blade subassembly being maintained stationary, the exposure FoV can be shifted from the current exposed region to a new region to be exposed simply by moving the mask and wafer stages. This process can be repeated until all the regions to be exposed have been exposed. Since the need for multiple shutter blade assemblies is dispensed with, structural simplification can be achieved, the requirements for control accuracy can be lowered.

Techniques are disclosed for optical distortion reduction in projection systems for scanning projection and/or lithography. A projection system includes an illumination system configured to generate illumination radiation for generating an image of an object to be projected onto an image plane of the projection system. The illumination system includes a field omitting illumination condenser configured to receive the illumination radiation from a radiation source and provide a patterned illumination radiation beam to generate the image of the object, wherein the patterned illumination radiation beam comprises an omitted illumination portion corresponding to a ridge line of a roof prism disposed within an optical path of the projection system.

A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.

A method of operating an illuminator and apparatus thereof are proposed. A method includes: directing a radiation beam to the illuminator comprising slit fingers; sensing a temperature value of each of the slit fingers; determining a shifting value of the respective slit finger based on the temperature value; causing the respective slit finger to move according to the shifting value to form a light slit from the radiation beam; and exposing a workpiece using the light slit.

A method of controlling output of a radiation source, the method including: periodically monitoring an output energy of the radiation source; determining a difference between a reference energy signal and the monitored output energy; determining a feedback value; determining a desired output energy of the radiation source for a subsequent time period; and controlling an input parameter of the radiation source in dependence on the determined desired output energy during the subsequent time period. If the magnitude of the determined difference between the monitored output energy of the radiation source and the reference energy signal exceeds a threshold value: the determined difference does not contribute to the feedback value; and the determined difference is spread over the subsequent time period according to a reference energy signal adjustment profile and the reference energy signal adjustment profile is added to the reference energy signal for the subsequent time period.

The invention relates to a dual stage lithographic apparatus, wherein two substrate stages are constructed and arranged for mutual cooperation in order to perform a joint scan movement. The joint scan movement brings the lithographic apparatus from a first configuration, wherein immersion liquid is confined between a first substrate held by the first stage of the stages and a projection system of the apparatus, to a second configuration, wherein the immersion liquid is confined between a second substrate held by the second stage of the two stages and the projection system, such that during the joint scan movement the liquid is essentially confined within the space with respect to the projection system.

An exposure apparatus for transferring a pattern from a reticle to a workpiece, a pellicle being positioned near the reticle, includes a heat transfer frame, an illuminator, and a temperature controller. The heat transfer frame is configured to be positioned near the pellicle, the heat transfer frame defining a beam aperture. The illuminator directs a beam through the beam aperture and the pellicle at the reticle. The temperature controller controls the temperature of the heat transfer frame to control the temperature of the pellicle. The illuminator can direct the beam from a beam source, such as an EUV beam source. Additionally, the temperature controller can cryogenically cool the heat transfer frame.

A shutter blade assembly for a photolithography machine, a large-field of view (FoV) photolithography machine and an exposure method are disclosed. A scan-ning-directional shutter blade subassembly is moved once during each illuminance test and then moved above alignment marks after the test. During exposure, the scanning-directional shutter blade subassembly moves with a mask stage in the same direction and at the same speed so that it stays stationary relative to the alignment marks on a photomask (4). In case of full-FoV exposure, it is not necessary for a non-scanning-directional shutter blade subassembly to be moved, while in case of partial-FoV exposure, it is moved into the partial exposure FoV and defines there a window for obtaining a light spot with a desired shape by modulating illumination light. After that, with the non-scanning-directional shutter blade subassembly being maintained stationary, the exposure FoV can be shifted from the current exposed region to a new region to be exposed simply by moving the mask and wafer stages. This process can be repeated until all the regions to be exposed have been exposed. Since the need for multiple shutter blade assemblies is dispensed with, structural simplification can be achieved, the requirements for control accuracy can be lowered.