An exposure apparatus for transferring a pattern from a reticle to a workpiece, a pellicle being positioned near the reticle, includes a heat transfer frame, an illuminator, and a temperature controller. The heat transfer frame is configured to be positioned near the pellicle, the heat transfer frame defining a beam aperture. The illuminator directs a beam through the beam aperture and the pellicle at the reticle. The temperature controller controls the temperature of the heat transfer frame to control the temperature of the pellicle. The illuminator can direct the beam from a beam source, such as an EUV beam source. Additionally, the temperature controller can cryogenically cool the heat transfer frame.

A lithographic system for projecting an image onto a workpiece using radiation is provided. The lithographic system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image on the workpiece; a reticle positioned between the radiation source and the workpiece; and a mask positioned adjacent the reticle, the mask being configured to block radiation from the radiation source, the mask including a heat removal apparatus.

A lithographic system for projecting an image onto a workpiece using radiation is provided. The lithographic system includes: a support structure for supporting a workpiece; a radiation source for providing radiation to project an image on the workpiece; a reticle positioned between the radiation source and the workpiece; and a mask positioned adjacent the reticle, the mask being configured to block radiation from the radiation source, the mask including a heat removal apparatus.

A method includes identifying a first contamination region of a collector of a light source and enabling a subset of a plurality of temperature control elements positioned on the collector to cause a second contamination region to be formed on the collector symmetric to the first contamination region.

Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as lens, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics. The projection optics may be used to shape wavefront in the lithographic projection apparatus, enabling aberration control of the overall imaging process.

A lithographic apparatus comprising an illumination system configured to condition a radiation beam and a uniformity correction system configured to adjust an intensity profile of the radiation beam. The lithographic apparatus comprises a control system configured to control the uniformity correction system at least partially based on a thermal status criterion that is indicative of a thermal state of a part of the lithographic apparatus.

An extreme ultraviolet lithography system (10) that creates a pattern (230) having a plurality of densely packed parallel lines (232) on a workpiece (22) includes a patterning element (16); an EUV illumination system (12) that directs an extreme ultraviolet beam (13A) at the patterning element (16); a projection optical assembly (18) that directs the extreme ultraviolet beam diffracted off of the patterning element (16) at the workpiece (22); and a pattern blind assembly (26) positioned in a beam path (55) of the extreme ultraviolet beam (13A). The pattern blind assembly (26) shapes the extreme ultraviolet beam (13A) so that an exposure field (28) on the workpiece (22) has a polygonal shape.

An illumination optical system that irradiates a target object with light from a light source unit includes an integrator optical system, a condenser lens, and a bandpass filter. The integrator optical system is disposed on an optical path of the light emitted from the light source unit and uniformizes an illuminance distribution of the light with which the target object is to be irradiated. The condenser lens includes a plurality of lenses and irradiates the target object with the light emitted from the integrator optical system. The bandpass filter is disposed between any two of the plurality of lenses included in the condenser lens.

A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.

An extreme ultraviolet lithography system (10) that creates a pattern (230) having a plurality of densely packed parallel lines (232) on a workpiece (22) includes a patterning element (16); an EUV illumination system (12) that directs an extreme ultraviolet beam (13A) at the patterning element (16); a projection optical assembly (18) that directs the extreme ultraviolet beam diffracted off of the patterning element (16) at the workpiece (22); and a pattern blind assembly (26) positioned in a beam path (55) of the extreme ultraviolet beam (13A). The pattern blind assembly (26) shapes the extreme ultraviolet beam (13A) so that an exposure field (28) on the workpiece (22) has a polygonal shape.