An exposure apparatus includes an exposure unit for exposing a wafer. The exposure unit includes an illumination system and masks. The illumination system includes a light-homogenizing unit. The light-homogenizing unit includes a light-homogenizing quartz rod having a regular hexagonal cross section. Each of the masks has a regular hexagonal shape matching with the cross section of the light-homogenizing quartz rod. A field of exposure resulting from this arrangement is less affected by objective field of view distortion and allows a higher useful depth of focus (UDoF) when compared to other fields of exposure of the same size. In addition, with the same projection objective DoF, a greater field of exposure can be obtained.

A method for illuminating an object field of a projection exposure apparatus includes providing a subset of first facets to be positioned in park positions, which are each spaced apart from an associated target position, but at most by a maximum distance.

Embodiments of the present disclosure generally relate to apparatuses and systems for performing photolithography processes. More particularly, compact apparatuses for projecting an image onto a substrate are provided. In one embodiment, an image projection apparatus includes a light pipe coupled to a first mounting plate, and a frustrated prism assembly, one or more digital micro-mirror devices, one or more beamsplitters, and one or more projection optics, which are coupled to a second mounting plate. The first and second mounting plates are coplanar, such that the image projection apparatus is compact and may be aligned in a system having a plurality of image projection apparatuses, each of which is easily removable and replaceable.

An illumination system (IL) for a lithographic apparatus comprising a polarization adjustment apparatus (15) arranged to receive linearly polarized radiation, the polarization adjustment apparatus comprising regions which are configured to rotate the polarization orientation by different amounts, a directing apparatus (6) operable to direct the radiation through one or more regions of the polarization adjustment apparatus, a controller (CN) configured to control the directing apparatus so as to control which of the one or more regions of the polarization adjustment apparatus radiation is directed through, wherein the controller is configured to limit which of the regions radiation is directed through to one or more regions which rotate the orientation of the linear polarization by substantially the same amount, and a diffuser configured to receive radiation output from the polarization adjustment apparatus and increase a range of angles at which the radiation propagates while substantially conserving the polarization state of the radiation.

In a method for predicting at least one illumination parameter for evaluating an illumination setting for illuminating an object field of a projection exposure apparatus, illumination parameters are measured at a number of calibration settings, correction terms for prediction values of the illumination parameters are determined from the measured values, and then at least one illumination parameter of at least one illumination setting, which is not contained in the set of n calibration settings, is predicted.

A microlithographic illumination unit for post-exposure of a photoresist provided on a wafer in a microlithography process, has at least one light source and a light-guiding and light-mixing element for coupling the electromagnetic radiation generated by the light source into the photoresist. This light-guiding and light-mixing element has a first pair of mutually opposite side faces, the maximum spacing of which has a first value. Multiple reflections of the electromagnetic radiation on these side faces take place, wherein the light-guiding and light-mixing element has a second pair of mutually opposite side faces, the maximum spacing of which has a second value. The maximum extent of the light-guiding and light-mixing element in the light propagation direction of the electromagnetic radiation has a third value. This third value is greater than the first value and is smaller than the second value.

The present disclosure relates a lithographic substrate marking tool. The tool includes a first electromagnetic radiation source disposed within a housing and configured to generate a first type of electromagnetic radiation. A radiation guide is configured to provide the first type of electromagnetic radiation to a photosensitive material over a substrate. A second electromagnetic radiation source is disposed within the housing and is configured to generate a second type of electromagnetic radiation that is provided to the photosensitive material.

A laser system comprising: a laser operable to generate a laser beam; an optical system comprising a first optical element and a second optical element; and an output through which the laser beam exits the laser system; the laser, optical system and output arranged such that the laser beam travels to the first optical element, the second optical element and the output sequentially; wherein the first optical element has a first focal length, the second optical element has a second focal length equal to the first focal length, and the second optical element is spaced from the first optical element by a distance of two times the first focal length.

A radiation system includes a beam splitting apparatus configured to split a main radiation beam into a plurality of branch radiation beams and a radiation alteration device arranged to receive an input radiation beam and output a modified radiation beam, wherein the radiation alteration device is configured to provide an output modified radiation beam which has an increased etendue, when compared to the received input radiation beam, wherein the radiation alteration device is arranged such that the input radiation beam which is received by the radiation alteration device is a main radiation beam and the radiation alteration device is configured to provide a modified main radiation beam to the beam splitting apparatus, or wherein the radiation alteration device is arranged such that the input radiation beam which is received by the radiation alteration device is a branch radiation beam output from the beam splitting apparatus.

A mask exposure system includes a chamber, a stage configured to receive a mask, one or more mask temperature sensors, a beam source configured to irradiate an electron beam on the mask, a deflector configured to adjust a position at which the electron beam is irradiated on the mask by deflecting the electron beam based on a voltage level applied to the deflector, in the chamber, a chamber temperature sensor configured to measure an internal temperature of the chamber, and a controller configured to control a direction of deflection and a degree of deflection of the electron beam the deflector. The controller is configured to correct the voltage level applied to the deflector based on a difference between the temperature of the mask and the chamber.