An exposure apparatus according to the present invention includes an illumination optical system including a first optical modulation unit having a plurality of optical modulation elements, a second optical modulation unit having a plurality of optical modulation elements, and an imaging optical system forming optical images on a predetermined plane by using lights from the first optical modulation unit and the second optical modulation unit, and a projection optical system projecting the optical image formed on the predetermined plane onto a substrate.

A facet mirror for an illumination optical unit of a projection exposure apparatus has a large number of displaceable individual facets with a facet main body and a reflection surface arranged on it. At least some of the individual facets have a displacement range such that they come into contact with a stop surface in one or more displacement positions.

A gamma ray generator includes a plate, a plurality of holes and a plurality of gamma ray sources. The plate is configured to rotate along a rotational axis. The holes are disposed in the plate, and the holes are arranged in a matrix. The gamma ray sources are respectively placed in the holes.

A field facet system for a lithography apparatus includes an optical element. The optical element includes a base section having an optically effective surface. The optical element also includes a plurality of lever sections provided at a rear side of the base section facing away from the optically effective surface. In addition, the field facet system includes two or more actuating elements configured, with the aid of the lever sections acting as levers, to apply in each case a bending moment to the base section to elastically deform the base section and thus to alter a radius of curvature of the optically effective surface. The actuating elements are arranged in series as viewed along a length direction of the optical element.

In a method of pattern formation information including a pattern size on a reticle is received. A width of an EUV radiation beam is adjusted in accordance with the information. The EUV radiation beam is scanned on the reticle. A photo resist layer is exposed with a reflected EUV radiation beam from the reticle. An increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width is greater when the width before adjustment is W1 compared to an increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width when the width before adjustment is W2 when W1>W2.

A field facet system for a lithography apparatus comprises: an optical element which comprises an elastically deformable facet portion having a light-reflecting optically active surface; and at least one actuating element for introducing a bending moment into the facet portion to deform the facet portion to change a radius of curvature of the optically active surface. The facet portion is curved in an arched manner in a plan view of the optically active surface. The rigidity of the facet portion as viewed along a longitudinal direction of the facet portion is variable so that a normal vector oriented perpendicularly to the optically active surface tilts exclusively about a spatial direction when the bending moment is introduced into the facet portion.

A field facet system for a lithography apparatus comprises: an optical element comprising a base body and an elastically deformable facet portion connected to the base body and having a light-reflecting optically active surface; and a plurality of actuating elements for deforming the facet portion to change a radius of curvature of the optically active surface. The actuating elements are operatively connected to the facet portion to isolate a heat induced deflection of the actuating elements from the facet portion so that the radius of curvature is not affected by the heat-induced deflection of the actuating elements.

An optical apparatus, which illuminates a first area with light from a light source while the first area is longer in a second direction intersecting a first direction than in the first direction, includes a collector optical member which is arranged in an optical path between the light source and the first area, and condenses the light from the light source to form a second area in a predetermined plane, the second area being longer in a fourth direction intersecting a third direction than in the third direction; and a first fly's eye optical member which is provided within the predetermined plane including the second area, and has a plurality of first optical elements guiding the light of the collector optical member to the first area.

A micromirror array comprises a substrate, a plurality of minors for reflecting incident light and, for each mirror (20) of the plurality of minors, at least one piezoelectric actuator (21) for displacing the minor, wherein the at least one piezoelectric actuator is connected to the substrate. The micromirror array further comprises one or more pillars (24) connecting the minor to the at least one piezoelectric actuator. Also disclosed is a method of forming such a micromirror array. The micromirror array may be used in a programmable illuminator. The programmable illuminator may be used in a lithographic apparatus and/or in an inspection apparatus.

An imaging optical unit for EUV microlithography is configured so that, when used in an optical system for EUV microlithography, relatively high EUV throughput and high imaging quality can achieved.