An EUV projection lithography illumination optical unit guides illumination light toward an object field, the illumination optical unit comprising. The unit includes: a first facet mirror comprising a plurality of first monolithic facets; and a second facet mirror downstream of the first facet mirror in a beam path of the illumination light, the second facet mirror comprising a plurality of second facets, each second facet being configured to contribute to imaging a corresponding first monolithic facet of the first facet mirror into the object field via an illumination channel. Individual parts of the first monolithic facets are configured so that illumination light is guided from the individual parts of the first monolithic facets toward different target locations on the corresponding second facet of the second facet mirror.

A microlithography illumination system includes a first raster arrangement including a first plurality of bundle-forming raster elements arranged in or adjacent a first plane of the illumination system. The first plurality of bundle-forming raster elements is configured to generate a raster arrangement of secondary light sources. The illumination system also includes a transmission optics configured to superimpose transmission of the illumination light of the secondary light sources into the object field. The transmission optics includes a second raster arrangement comprising a second plurality of bundle-forming raster elements. The illumination system further includes a displacement device configured to displace a displaceable segment of the first raster arrangement relative to the second raster arrangement. The displaceable segment includes exactly one of the raster elements, a group of several raster elements, a raster column, a raster area, or several groups of raster elements.

An illumination system of a micro-lithographic projection exposure apparatus is provided, which is configured to illuminate a mask positioned in a mask plane. The system includes a pupil shaping optical subsystem and illuminator optics that illuminate a beam deflecting component. For determining a property of the beam deflecting component, an intensity distribution in a system pupil surface of the illumination system is determined. Then the property of the beam deflecting component is determined such that the intensity distribution produced by the pupil shaping subsystem in the system pupil surface approximates the intensity distribution determined before. At least one of the following aberrations are taken into account in this determination: (i) an aberration produced by the illuminator optics; (ii) an aberration produced by the pupil shaping optical subsystem; (iii) an aberration produced by an optical element arranged between the system pupil surface and the mask plane.

In general, in one aspect, the invention features a system that includes an illumination system of a microlithography tool, the illumination system including a first component having a plurality of elements. During operation of the system, the elements direct radiation from a source along an optical path to an arc-shaped object field at an object plane of a projection objective, and at least one of the elements has a curved shape that is different from the arc-shape of the object field.

Illumination systems for microlithographic projection exposure apparatus, as well as related systems, components and methods are disclosed. In some embodiments, an illumination system includes one or more scattering structures and an optical integrator that produces a plurality of secondary light sources.

The present description concerns a manufacturing method comprising the exposure of a resist layer to a radiation by an optical lithography system comprising a mask, the mask comprising an array of pads opaque to radiation, spaced apart by a pitch, and distributed in at least two regions, the area ratios of the two regions being different, the pitch being equal, to within 10%, to the minimum resolution dimension of the Rayleigh criterion, and the development of the layer obtaining two pillars of different heights at the locations of the images of the two regions and of protrusions of nanometric heights at the top of each pillar at the locations of the images of the pillars.