An exposure apparatus exposes a substrate with illumination light via an optical system. A stage disposed below the optical system has a holder to hold the substrate. A carrier system disposed above the stage has a first support member that supports the substrate in a noncontact manner from a surface side of the substrate, which is irradiated with the illumination light. A second support member different from the first support member supports the substrate in a contact manner from a rear surface side. A drive system coupled to the first and the second support members moves at least the second support member so that relative movement between the first and the second support members and relative movement between the second support member and the holder are performed at least in a vertical direction. The second support member carries the substrate from the first support member to the holder.

An apparatus (100) for receiving input radiation (108) and broadening a frequency range of the input radiation so as to provide broadband output radiation (110). The apparatus comprises a fiber (102), wherein the fiber (102) may comprise a hollow core (104) for guiding radiation propagating through the fiber (102). The apparatus (100) further comprises an apparatus for providing a gas mixture (106) within the hollow core (104). The gas mixture (106) comprises a hydrogen component, and a working component, wherein the working component is for broadening a frequency range of a received input radiation (108) so as to provide the broadband output radiation (110). The apparatus may be included in a radiation source.

A measurement illumination optical unit guides illumination light into an object field of a projection exposure apparatus for EUV lithography. The illumination optical unit has a field facet mirror with a plurality of field facets and a pupil facet mirror with a plurality of pupil facets. The latter serve for overlaid imaging in the object field of field facet images of the field facets. A field facet imaging channel of the illumination light is guided via any one field facet and any one pupil facet. A field stop specifies a field boundary of an illumination field in the object plane. The illumination field has a greater extent along one field dimension than any one of the field facet images. At least some of the field facets include tilt actuators which help guide the illumination light into the illumination field via various field facets and one and the same pupil facet.

A method including: obtaining a measurement of a metrology target on a substrate processed using a patterning process, the measurement having been obtained using measurement radiation; and deriving a parameter of interest of the patterning process from the measurement, wherein the parameter of interest is corrected by a stack difference parameter, the stack difference parameter representing an un-designed difference in physical configuration between adjacent periodic structures of the target or between the metrology target and another adjacent target on the substrate.

In corner sections of first to fourth quadrants whose origin point is a center of an upper surface of a stage, three each of two-dimensional heads are provided. The three each of two-dimensional heads include one first head and two second heads. The stage is driven, while measuring a position of the stage using three first heads that face a two-dimensional grating of a scale plate provided above the stage from the four first heads, and during the driving, difference data of measurement values of the two second heads with respect to the first head in a measurement direction are taken in for head groups to which the three first heads belong, respectively, and using the difference data, grid errors are calibrated.

An illumination system for a lithographic apparatus includes an array of lenses configured to receive a radiation beam and focus the beam into a plurality of sub-beams, an array of reflective elements configured to receive the sub-beams and reflect the sub-beams so as to form an illumination beam, a beam splitting device configured to split the illumination beam into a first portion and a second portion wherein the first portion is directed to be incident on a lithographic patterning device, a focusing unit configured to focus the second portion of the illumination beam onto a detection plane such that an image is formed at the detection plane and wherein the image is an image of the sub-beams in which the sub-beams do not overlap with each other and an array of detector elements configured to measure the intensity of radiation which is incident on the detection plane.

An inspection apparatus (140) measures asymmetry or other property of target structures (T) formed by a lithographic process on a substrate. For a given set of illumination conditions, accuracy of said measurement is influenced strongly by process variations across the substrate and/or between substrates. The apparatus is arranged to collect radiation scattered by a plurality of structures under two or more variants of said illumination conditions (p1−, p1, p1+; λ1−, λ1, λ1+). A processing system (PU) is arranged to derive the measurement of said property using radiation collected under a different selection or combination of said variants for different ones of said structures. The variants may be for example in wavelength, or in angular distribution, or in any characteristic of the illumination conditions. Selection and/or combination of variants is made with reference to a signal quality (302, Q, A) observed in the different variants.

A scatterometer performs diffraction based measurements of one or more parameters of a target structure. To make two-color measurements in parallel, the structure is illuminated simultaneously with first radiation (302) having a first wavelength and a first angular distribution and with second radiation (304) having a second wavelength and a second angular distribution. The collection path (CP) includes a segmented wavelength-selective filter (21, 310) arranged to transmit wanted higher order portions of the diffracted first radiation (302X, 302Y) and of the diffracted second radiation (304X, 304Y), while simultaneously blocking zero order portions (302″, 304″) of both the first radiation and second radiation. The illumination path (IP) in one embodiment includes a matching segmented wavelength-selective filter (13, 300), oriented such that a zero order ray passing through the illumination optical system and the collection optical system will be blocked by one of said filters or the other, depending on its wavelength.

An exposure apparatus is equipped with a first and second stage that are movable independently from each other within a predetermined plane and each have a table with a grating positioned under a surface where a wafer is mounted, and a third stage that is movable independently from the first and second stages within a predetermined plane and includes a light-receiving plane that receives an energy beam via an optical system. An optical member is provided that is at least a part of a measurement device, which performs a measurement related to exposure based on a light-receiving result of the energy beam received via the light-receiving plane. In an exposure station and measurement station, a first and second measurement system are respectively provided that measure the position of the tables by irradiating the grating of the first or second stage from below with a measurement beam.

Maskless lithographic apparatus measuring accumulated amount of light is provided. The maskless lithographic apparatus includes a light source which emits light, a stage on which a substrate is disposed, an optical system which converts the light into a beam spot array including a plurality of columns and a plurality of rows and irradiates the beam spot array onto the stage, a slit to which the beam spot array is irradiated and which passes an nth (n is a natural number) row of the beam spot array, an optical sensor which senses the nth row of the beam spot array which has passed through the slit, and a measuring unit which measures an accumulated amount of light in the nth row of the beam spot array sensed by the optical sensor