The disclosure pertains to an optical apparatus, in particular for microlithography, that includes an optical module, a support structure and a connection apparatus. The connection apparatus includes at least one connection unit which includes a first connector part and a second connector part. The first connector part is connected to the optical module, and the second connector part is connected to the support structure.

An actuator includes a housing, a movable part, and an advancing unit that is at least temporarily connected to the movable part. The advancing unit includes a deformation unit and a deformer configured to deform the deformation unit with a vector component perpendicular to an effective direction of the actuator so that a total length of the deformation unit changes in the effective direction of the actuator as a result of the deformation. The movable part is configured to move in the effective direction of the actuator upon a removal of the vector component on the deformation unit and the deformation unit is disposed along the effective direction of the actuator upon the removal of the vector component on the deformation unit.

The present invention provides an exposure apparatus including a projection optical system configured to project light from a reticle onto a substrate, a processor configured to estimate a variation in imaging characteristic of the projection optical system, based on a model determined in advance, and an adjusting device configured to adjust the imaging characteristic of the projection optical system based on the variation estimated by the processor, wherein the processor is configured, if an error of the imaging characteristic of the projection optical system adjusted by the adjusting device based on the variation which is estimated based on a first number of models, for estimating the variation, determined in advance without the reticle, does not fall within a tolerance, to generate a second number of models for estimating the variation, the second number being larger than the first number.

In accordance with an embodiment of the disclosure, a method of patterning can include dividing an image into a set of frame sections; determining a tip pattern for a respective portion of an image to be patterned by each tip of the tip array in each frame section of the set of frame sections; disposing the tip array in a patterning position in a first location of the substrate corresponding to a location of the substrate in which the first frame section in the set of frame sections is to be patterned; projecting a first pattern of radiation onto the tip array to selectively irradiate one or more tips of the tip array and pattern the substrate, wherein the first pattern of radiation corresponds to a tip pattern for the first frame section; disposing the tip array in a patterning position in a second location of the substrate corresponding to a location of the substrate in which the second frame section in the set of frame sections is to be patterned; projecting a second pattern of radiation onto the tip array to selectively irradiate tips of the tip array and pattern the substrate, wherein the second pattern of radiation corresponds to a tip pattern for the second frame section; and repeating the disposing and projecting for each frame section in the set of frame sections to pattern the image.

Metrology methods and systems are provided, which measure metrology targets during the exposure stage using reflected or diffracted exposure illumination or additional simultaneous illumination having longer wavelengths than the exposure illumination. The metrology measurements are used to correct the lithographic process in a short loop, enabling realtime and even predictive error correction. The metrology methods, tools and systems also include defect detection during the exposure stage.

An arrangement of a microlithographic optical imaging device includes first and supporting structures. The first supporting structure supports an optical element of the imaging device. The first supporting structure supports the second supporting structure via supporting spring devices of a vibration decoupling device. The supporting spring devices act kinematically parallel to one another between the first and second supporting structures. Each supporting spring device defines a supporting force direction and a supporting length along the supporting force direction. The second supporting structure supports a measuring device configured to measure the position and/or orientation of the optical element in relation to a reference in at least one degree of freedom and up to all six degrees of freedom in space. A creep compensation device compensates a change in a static relative situation between the first and second supporting structures in at least one correction degree of freedom.

An arrangement of a microlithographic optical imaging device includes first and second supporting structures. The first supporting structure supports an optical element of the imaging device. The first supporting structure supports the second supporting structure via supporting spring devices of a vibration decoupling device. The supporting spring devices act kinematically parallel to one another between the first and second supporting structures. Each of the supporting spring devices defines a supporting force direction and a supporting length along the supporting force direction. The second supporting structure supports a measuring device which measures the position and/or orientation of the at least one optical element in relation to a reference in at least one degree of freedom up to all six degrees of freedom in space. A reduction device reduces a change in a static relative situation between the first and second supporting structures in at least one correction degree of freedom.

An arrangement of a microlithographic optical imaging device includes first and second supporting structures. The first supporting structure supports an optical element of the imaging device. The first supporting structure supports the second supporting structure via supporting spring devices of a vibration decoupling device. The supporting spring devices act kinematically parallel to one another between the first and second supporting structures. Each supporting spring device defines a supporting force direction and a supporting length along the supporting force direction. The second supporting structure supports a measuring device which is configured to measure the position and/or orientation of the at least one optical element in relation to a reference in at least one degree of freedom. A creep compensation device compensates a creep-induced change in a static relative situation between the first and second supporting structures in at least one correction degree of freedom.

A method for controlling a scanning exposure apparatus configured for scanning an illumination profile over a substrate to form functional areas thereon. The method includes determining a control profile for dynamic control of the illumination profile during exposure of an exposure field including the functional areas, in a scanning exposure operation; and optimizing a quality of exposure of one or more individual functional areas. The optimizing may include a) extending the control profile beyond the extent of the exposure field in the scanning direction; and/or b) applying a deconvolution scheme to the control profile, wherein the structure of the deconvolution scheme is based on a dimension of the illumination profile in the scanning direction.

Methods and apparatus for determining an intensity profile of a radiation beam. The method comprises providing a diffraction structure, causing a relative movement of the diffraction structure relative to the radiation beam from a first position, wherein the radiation beam does not irradiate the diffraction structure to a second position, wherein the radiation beam irradiates the diffraction structure, measuring, with a radiation detector, diffracted radiation signals produced from a diffraction of the radiation beam by the diffraction structure as the diffraction structure transitions from the first position to the second position or vice versa, and determining an intensity profile of the radiation beam based on the measured diffracted radiation signals.