A method for producing a main body (33) of an optical element for semiconductor lithography includes: —producing a blank (32), —introducing at least one fluid channel (36.x) into the blank (32), then —producing the main body (33) by shaping the blank (32) onto a mold (42). Furthermore, the disclosure describes a main body (33) of an optical element that includes at least one fluid channel (36.x), the fluid channel (36.x) being embodied such that the distance between the fluid channel (36.x) and the surface (40) of the main body (33) provided for an optically active area (41) varies by less than 1 mm, preferably less than 0.1 mm and particularly preferably less than 0.02 mm.

A device and a method for regulating and controlling an incident angle of a light beam in a laser interference lithography process are disclosed. The device comprises: a beam splitter prism between a first lens and a second lens, a first position detector, a first decoupling lens between the first position detector and the beam splitter prism, a feedback control system connected to the first position detector and a first universal reflecting mirror. The beam splitter prism reflects first incident light passing through the first universal reflecting mirror, the first decoupling lens enables a first reflected light enter into the first position detector, the first position detector measures the light beam position, the feedback control system outputs a control command according to the measurement result to regulate a mirror base of the first universal reflecting mirror, thereby regulating and controlling an incident angle of an exposure light beam.

A method for a lithography exposing process includes placing a reticle over a reticle stage, generating a light beam by irradiating a droplet by a laser, projecting a first portion of the light beam over a plurality of light permeable protrusions formed on a reflection layer and directing, by the protrusions and the reflection layer, the first portion of the light beam to the reticle.

Systems, methods, and apparatus are provided for determining overlay of a pattern on a substrate with a mask pattern defined in a resist layer on top of the pattern on the substrate. A first grating is provided under a second grating, each having substantially identical pitch to the other, together forming a composite grating. A first illumination beam is provided under an angle of incidence along a first horizontal direction. The intensity of a diffracted beam from the composite grating is measured. A second illumination beam is provided under the angle of incidence along a second horizontal direction. The second horizontal direction is opposite to the first horizontal direction. The intensity of the diffracted beam from the composite grating is measured. The difference between the diffracted beam from the first illumination beam and the diffracted beam from the second illumination beam, linearly scaled, results in the overlay error.

A projection optical unit for microlithography includes a plurality of mirrors and has a numerical aperture having a value larger than 0.5. The plurality of mirrors includes at least three grazing incidence mirrors, which deflect a chief ray of a central object field point with an angle of incidence of greater than 45°. Different polarized light beams passing the projection optical unit are rotated in their polarization direction by different angles of rotation. The projection optical unit includes first and second groups of mirrors. The second group of mirrors includes the final two mirrors of the plurality of mirrors at the image side. A linear portion in the pupil dependence of the total geometrical polarization rotation of the projection optical unit is less than 20% of a linear portion in the pupil dependence of the geometrical polarization rotation of the second group of mirrors.

An illumination optical system of the present invention includes a first lens array FE including a plurality of lens cells dividing a light flux emitted from a light source into a plurality of light fluxes, a second lens array MLAi including lens cells on which spot lights exiting from the lens cells included in the first lens array FE are condensed, and a first optical member IL3 imaging the spot light, which has been condensed on the lens cell included in the second lens array MLAi, on one of optical modulation elements constituting an optical modulation unit.

An imprint lithography method of configuring an optical layer includes selecting one or more parameters of a nanolayer to be applied to a substrate for changing an effective refractive index of the substrate and imprinting the nanolayer on the substrate to change the effective refractive index of the substrate such that a relative amount of light transmittable through the substrate is changed by a selected amount.

Embodiments described herein provide a lithographic system having two or more lithographic tools connected to a radiation source using two or more variable attenuation units. In some embodiments, the variable attenuation unit reflects a portion of the received light beam to the lithographic tool attached thereto and transmits a remaining portion of the received light beam to the lithographic tools downstream. In some embodiments, the radiation source includes two or more laser sources to provide laser beams with an enhanced power level and which can prevent operation interruption due to laser source maintenances and repair.

A method of forming a layer (3) on a substrate (2) made of a fluoridic material includes: depositing a coating material (9) on the substrate to form the layer and generating a plasma (12) to assist the deposition of the coating material. The plasma is formed from a gas mixture (14) containing a first gas (G) and a second gas (H), wherein the second gas has an ionization energy less than an ionization energy of the first gas, the first gas is a noble gas and the second gas is a further noble gas. An associated optical element includes: a substrate (2) composed of a fluoridic material, in particular a metal fluoride, wherein the substrate has a coating (18) having a layer (3) formed by the above method. An associated optical system, in particular for the DUV wavelength range, includes at least one such optical element.

A projection exposure apparatus (10) includes a mask mark illumination light source (21) capable of irradiating a mask mark (MM) with exposure light itself or a first alignment light (L1) having substantially the same wavelength as the exposure light, and an alignment unit (30) having a work mark illumination light source (31) capable of irradiating a work mark (WM) with second alignment light (L2) having a wavelength different from the wavelength of the exposure light, an imaging device (32), and an imaging optical system (40). The imaging optical system (40) includes a first dichroic prism (41) for synthesizing the first alignment light (L1) and the light from the work mark (WM) and emitting the synthesized light toward the imaging device (32), and an optical path length changing optical system (42) for splitting and merging the first alignment light (L1), in which the optical positional relationships of the work mark (WM) and the image (MMI) of the mask mark (MM) with respect to the imaging device (32) are equivalent. Accordingly, it is possible to provide a projection exposure apparatus and a projection exposure method that allow high-precision alignment even in a small-sized exposure area.